Abstract:The strong thickness-dependent narrow direct band gap of few-layer a-In2Se3 makes it a promising candidate for high-performance photodetectors. However, few researchers focus on the relationship between thickness and optoelectronic character-istics, and most results are based on the mechanically exfoliated a- In2Se3 nanoflakes. Herein, a reliable physical vapor deposition strategy to grow a-In2Se3 nanosheets with tunable thickness and submillimeter scale is reported. High-resolution transmission electron microscopy (HRTEM), Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS) studies confirmed the high-quality growth of a-In2Se3 nanosheets. The back-gate field-effect transistors on SiO2 substrates display n-type semiconductor behavior. A systematical investigation of the optoelectronic properties reveals a thickness-dependent broadband response from visible (447 nm) to near-infrared (1550 nm) wavelengths with better and excellent performance obtained in thicker a-In2Se3 nanosheets than that in thinner devices. More importantly, a great improvement of the responsivity, detectivity, and external quantum efficiency (EQE) can be achieved by changing the thickness of In2Se3. The photodetector exhibits an outstanding photoresponsivity of 347.6 A/W, an ultrahigh detectivity of 1.5 x 1013 Jones, and an external quantum efficiency of 8.3 x 104%, which is superior to several a-In2Se3 nanostructure-or other two-dimensional (2D)-based photodetectors. The thickness-dependent broadband response characteristics make the a-In2Se3 nanostructure a promising candidate for multifunctional optoelectronic device applications.

Α-In2se3 Nanostructure-Based Photodetectors for Tunable and Broadband Response

High-responsivity broad-band sensing and photoconduction mechanism in direct-Gap α-In 2 Se 3 nanosheet photodetectors

High-Performance Waveguide-Integrated Bi2O2Se Photodetector for Si Photonic Integrated Circuits.

Uv-Swir Broad Range Photodetectors Made From Few-Layer Alpha-In2se3 Nanosheets

Thickness modulation of incline-grown Bi2O2Se for the construction of high-performance phototransistors

Enhanced Photoresponse of Indium-Doped Tin Disulfide Nanosheets.

Boosting Photoresponse of Self-Powered InSe-Based Photoelectrochemical Photodetectors via Suppression of Interface Doping

Layer-dependent Ultrafast Dynamics of Α-In2se3 Nanoflakes

Facile fabrication of amorphous-In2Se3/Si heterojunction for fast ultraviolet to near-infrared broadband photodetection

Nanoscale AgInTe2/Si Truncated Quasitetrahedrons for Heterostructured Photodetectors

Universal Strategy Integrating Strain and Interface Engineering to Drive High‐Performance 2D Material Photodetectors

Ultrafast-response and broad-spectrum polarization sensitive photodetector based on Bi1.85In0.15S3 nanowire

Highly Sensitive InSb Nanosheets Infrared Photodetector Passivated by Ferroelectric Polymer

High‐Performance Near‐Infrared Photodetector Based on Ultrathin Bi2O2Se Nanosheets

Two-dimensional (2D) α-In2Se3/Ta2NiSe5 heterojunction photodetector with high sensitivity and fast response in a wide spectral range

High-performance Mid-Infrared Photodetection Based on Bi2Se3 Maze and Free-Standing Nanoplates.

Wafer-Scale Synthesis of High-Quality Semiconducting Two-Dimensional Layered InSe with Broadband Photoresponse

Edge-Epitaxial Growth of InSe Nanowires toward High-Performance Photodetectors

Single-crystalline In2S3nanowire-based Flexible Visible-Light Photodetectors with an Ultra-High Photoresponse

Broad‐Band Photoelectrochemical Photodetector Based on Ternary Sb2Te2Se Nanosheets

Direct growth Bi2O2Se nanosheets on SiO2/Si substrate for high-performance and broadband photodetector