Abstract:The study explored the microstructure evolution of 6H-SiC that underwent sequential iron and helium ion irradiation with energies of 2.5 MeV and 500 keV, respectively, at room temperature, followed by annealing at 1500°C for two hours. Following irradiation, the entire damaged layer underwent amorphization. However, during subsequent annealing, epitaxial recrystallization took place, resulting in the formation of defected polycrystalline 6H-SiC characterized by the presence of Fe-rich clusters, cavities, and stacking faults. Fe-rich cavities were found to predominantly form at the edges of the stacking faults, as revealed by XTEM. The interaction of microstructural defects is further investigated via first-principles calculations. The periphery of the stacking faults has been identified as the primary location for the emergence of vacancy clusters, serving as favorable sites for the accumulation of point defects, including Fe atoms. This behavior can be attributed to the combined effects of mechanical and electronic energy relaxation mechanisms. Mechanically, the presence of stacking faults allows for the release of elastic energy that had been stored at the boundary. Electronically, the energy relaxation arises from the saturation of C- and Si-dangling bonds. Both of these processes contribute to the observed behavior, highlighting the intricate interplay between mechanical and electronic factors in the system. The low point defect migration energy barriers in the vicinity of the stacking faults promise high recombination, which can limit cavity growth and enhance radiation resistance. The study not only offers valuable insights into the mechanism of cavity/stacking faults interaction, contributing to a better understanding of radiation damage in 6H-SiC but also demonstrates that 6H-SiC material containing stacking faults could serve as a viable alternative to 3C-SiC for nuclear application.

Interaction of Stacking Faults with Point/Extended Defects in Fe-He Irradiated 6H-Sic

Ab Initio Molecular Dynamics Simulation of the Effects of Stacking Faults on the Radiation Response of 3C-Sic

Shearing Mechanisms of Stacking Fault and Anti-Phase-boundary Forming Dislocation Pairs in the Γ′ Phase in Ni-based Single Crystal Superalloy

Molecular dynamics simulating the effects of Shockley-type stacking faults on the radiation displacement cascades in 4H-SiC

Thermal behavior of iron in 6H-SiC: Influence of He-induced defects

Ab initio study of helium behavior near stacking faults in 3C-SiC

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Thermal transport recovery in irradiated SiC mediated by nano-layered stacking faults

Healing stacking fault tetrahedron in NiFe solid solution alloys through grain boundary migration

Highly Pressurized Helium Nanobubbles Promote Stacking-Fault-mediated Deformation in FeNiCoCr High-Entropy Alloy

Dynamic interactions between low-angle grain boundary and stacking fault tetrahedron in Ni-Fe solid solution alloys

Stacking Fault Duplication in 6H-Sic Single Crystal

Electron-Beam-Induced Current Study Of Stacking Faults And Partial Dislocations In 4h-Sic Schottky Diode

Microstructure Evolution of the Interface in SiCf/TiC-Ti3SiC2 Composite under Sequential Xe-He-H Ion Irradiation and Annealing Process

Defects evolution induced by Fe and He ions irradiation in Ti3AlC2

Evolution Of Defects And Defect Clusters In Beta-Sic Irradiated At High Temperature

Unstable stacking faults in submicron/micron Al grammins in multi-SiCp/multi-Al nanocomposite

Amorphization and Dislocation Evolution Mechanisms of Single Crystalline 6H-SiC

Molecular dynamics study of interactions between edge dislocation and irradiation-induced defects in Fe–10Ni–20Cr alloy

Point Defect Evolution in Ni, NiFe and NiCr Alloys from Atomistic Simulations and Irradiation Experiments

Long-Range Influence of Cr on the Stacking Fault Energy of Cr-Containing Concentrated Solid-Solution Alloys