Abstract:Context: Monolayer NbS2 is a promising new two-dimensional material, and it is critical to develop effective methods to make NbS2 a material for nanodevices and photovoltaic applications. This study studied the strain rule of sulfur-deficient NbS2 structure by first principles. The results show that all defect structures introduce impurity states to enhance electron transport. The disulfide defect structure produces an indirect band gap under the action of tensile strain, which can reach up to 0.56eV and become a diluted semiconductor. The hybrid NbS2 exhibits high transparency under infrared, visible, and low-frequency ultraviolet light, improving the material's transmittance, optical response, and catalytic activity. The research results of this paper will provide a basis for the subsequent research of single-layer NbS2 and accelerate the research process of NbS2 as a new semiconductor material. Methods: We are on the surface perpendicular to the 3×3×1 NbS2 and use a 15 Å vacuum layer to avoid interacting with periodic images. The first-principles simulation uses the CASTEP module in Materials Studio to simulate the hypothetical model and relaxation optimization structure of single-layer NbS2 under strain and defect state. The calculation function is PBE (Perdew-Burke-Ernzerhof) function under the generalized gradient approximation (GGA) for an approximate calculation to describe the interaction between electrons and the interaction between electrons and ions. The pseudopotentials of 3s23p4 and 4d45s1 valence electron configurations were used for S and Nb atoms, respectively. Van der Waals correction is considered in the simulation process. Moreover, it includes spin-orbit coupling (SOC) effects. For the plane wave truncation energy, we set it at 500eV. The arrangement of the Brillouin area is divided by 6×6×1 gamma-centered Monkhorst-Pack grids. The lattice deformation of all hybrid structures is less than 0.05 Gpa, and the interatomic force is less than 0.03 eV/Å.

Theoretical Prediction of the Influence of Defects and Atomic Occupation on the Elastic and Electronic Properties of NbSi2 Form the First-Principles Calculations

Atomistic Investigations of Single-Crystal Silicon with Pre-Existing Defects

Effect of Vacancy Defects and Hydrogen, Oxygen and Nitrogen Atomic Occupation on the Mechanical and Electronic Properties of C40-type VSi2

Structural and electronic properties of Nb-Cr-Si based alloys: First-principles calculations

An effect of structural vacancies on the lattice vibration, mechanical, electronic and thermodynamic properties of Cr5BSi3

Prediction of New Structure, Phase Transition, Mechanical, and Thermodynamic Properties of Nb3Si

Effect of Structural Vacancies on Lattice Vibration, Mechanical, Electronic, and Thermodynamic Properties of Cr5BSi3

Insight into the Vacancy Effects on Mechanical and Electronic Properties of V5Si3 Silicides from First-Principles Calculations.

The Mechanism of Elastic and Electronic Properties of Tungsten Silicide (5/3) with Vacancy Defect from the First-Principles Calculations

First‐Principles Study on Electronic and Elastic Properties of Co, Ni, Cu, and Mo‐Doped Β‐Si3N4

Effect of Anti-Site Point Defects on the Mechanical and Thermodynamic Properties of MgZn2, MgCu2 Laves Phases: A First-Principle Study

Effects of Doped Elements (Si, Cr, W and Nb) on the Stability, Mechanical Properties and Electronic Structures of MoAlB Phase by the First-Principles Calculation

The Effects of Vacancies Defects and Oxygen Atoms Occupation on Physical Properties of Chromium Silicide from a First-Principles Calculations

The Influence of Vacancy Defects on Elastic and Electronic Properties of TaSi (5/3) Desilicides from a First-Principles Calculations

The structural, mechanical and electronic properties of NbXSi (X=Fe, Co, Ni, Ru, Rh, Pd, Os, Ir and Pt) compounds from first-principles calculations

First-principles Calculations of the Mechanical Properties of Mg2Si Intermetallic Via Ternary Elements Doping

Theoretical predictions of the electronic, optical and thermodynamic properties of the C40-type TMSi2 (TM = V, Nb and Ta) disilicides

Electronic and optical structural manipulation of NbS2 defects under strain: first-principles calculations

First-Principles Study Of Transition Metal Impurities In Si

First-principle calculation on mechanical and thermal properties of B2-NiSc with point defects

Structural, electronic, elastic and mechanical properties of NbC-based compounds: First-principles calculations