Abstract:The effect of vacancy defects on the structure and mechanical properties of semiconductor silicon materials is of great significance to the development of novel microelectronic materials and the processes of semiconductor sensors. In this paper, molecular dynamics is used to simulate the atomic packing structure, local stress evolution and mechanical properties of a perfect lattice and silicon crystal with a single vacancy defect on heating. In addition, their influences on the change in Young’s modulus are also analyzed. The atomic simulations show that in the lower temperature range, the existence of vacancy defects reduces the Young’s modulus of the silicon lattice. With the increase in temperature, the local stress distribution of the atoms in the lattice changes due to the migration of the vacancy. At high temperatures, the Young’s modulus of the silicon lattice changes in anisotropic patterns. For the lattice with the vacancy, when the temperature is higher than 1500 K, the number and degree of distortion in the lattice increase significantly, the obvious single vacancy and its adjacent atoms contracting inward structure disappears and the defects in the lattice present complex patterns. By applying uniaxial tensile force, it can be found that the temperature has a significant effect on the elasticity–plasticity behaviors of the Si lattice with the vacancy.

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First-principles study of the lattice vibration, elastic anisotropy and thermodynamical properties of Tantalum Silicide with the different crystal structures

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First-principles exploration of elastic anisotropy and thermal properties of the C40-type VSi2, NbSi2, and TaSi2 disilicides

Atomic Simulations of Packing Structures, Local Stress and Mechanical Properties for One Silicon Lattice with Single Vacancy on Heating

Influence of vacancy on the mechanical behavior, thermodynamic properties and electronic structure of orthorhombic Ti3Sn from first-principles calculations

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First-principles calculations of electronic, optical, phononic and thermodynamic properties of C40-type TMSi2 (TM = Cr, Mo, W) disilicides

The structural, mechanical, electronic, lattice dynamics and thermodynamic properties of Ta T Si ( T = Rh, Os, Ir) compounds by first-principles calculations

Electronic and optical properties of oxygen vacancies in amorphous Ta 2 O 5 from first principles