Abstract:Two-dimensional (2D) ferroelectricity have attracted much attention due to their applications in novel miniaturized devices such as nonvolatile memories, field effect transistors, and sensors. Since most of the commercial ferroelectric (FE) devices are based on ABO3 perovskite oxides, it is important to investigate the properties of 2D ferroelectricity in perovskite oxide thin films. Here, based on density functional theory (DFT) calculations, we find that there exist three kinds of in-plane FE states that originate from different microscopic mechanisms: (i) a proper FE state with the polarization along [110] due to the second-order Jahn-Teller effect related to the B ion with empty d-orbitals; (ii) a robust FE state with the polarization along [100] induced by the surface effect; (iii) a hybrid improper FE state with the polarization along [110] that is induced by the trilinear coupling between two rotational modes and the A-site displacement. Interestingly, the ferroelectricity in the latter two cases becomes stronger along with decreasing the thin film thickness, in contrast to the usual behavior. Moreover, the latter two FE states are compatible with magnetism since their stability does not depend on the occupation of the d-orbitals of the B-ion. These two novel 2D FE mechanisms provide new avenues to design 2D multiferroics, as we demonstrated in SrVO and CaFeO thin film cases. Our work not only reveals new physical mechanisms of 2D ferroelectricity in perovskite oxide thin films but also provides a new route to design the high-performance 2D FE and multiferroics.

Two-Dimensional Ferroelectricity in a Single-Atom Adsorbed BiI3 Monolayer

Two-dimensional ferroelectricity in a single-element bismuth monolayer

Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit

Ferroelectricity in 2D Elemental Materials

Prediction Of Intrinsic Ferromagnetic Ferroelectricity In A Transition-Metal Halide Monolayer

Discovery of Intrinsic Ferromagnetic Ferroelectricity in Transition Metal Halides Monolayer

Mechano-ferroelectric coupling: stabilization enhancement and polarization switching in bent AgBiP2Se6 monolayers

Ferroelastic Zr2P2XY (X/Y = I, Br, Cl or F; X ≠ Y) monolayers with tunable in-plane electronic anisotropy and remarkable out-of-plane piezoelectricity

Coexistence of Ferromagnetism and Ferroelectricity in Cu-Intercalated Bilayer CrI3

Lone-pair activated ferroelectricity and stable charged domain wall in Bi monolayer

Two-Dimensional Multiferroic Δ-Pbo Monolayer with a Large In-Plane Negative Poisson’s Ratio

Two-dimensional multiferroic semiconductors with coexisting ferroelectricity and ferromagnetism

Single-Layer BI: A Multifunctional Semiconductor with Ferroelectricity, Ultrahigh Carrier Mobility, and Negative Poisson’s Ratio

Molecular orientation dynamics triggers ferroelectricity and ferroelasticity in an organic-inorganic halide material

Two-dimensional Ferroelectric Ferromagnetic Half Semiconductor in VOF monolayer

Continuously tunable ferroelectric domain width down to the single-atomic limit in bismuth tellurite

Intrinsic Ferroelectric Quantum Spin Hall Insulator in Monolayer Na3Bi with Surface Trimerization.

Unusual Ferroelectricity in Two-Dimensional Perovskite Oxide Thin Films.

Ferroelectricity and multiferroicity in two-dimensional Sc 2 P 2 Se 6 and ScCrP 2 Se 6 monolayers.

Ferroelectricity induced by lone pair electron effect in halide perovskite monolayers

Ferroelectricity and Antiferroelectricity in Elemental Group-V Monolayer Materials