Realization of Zero-Field Skyrmions in a Magnetic Tunnel Junction

Bin He,Yue Hu,Chenbo Zhao,Jinwu Wei,Junwei Zhang,Yu Zhang,Chen Cheng,Jiahui Li,Zhuyang Nie,Yanxiang Luo,Yan Zhou,Shilei Zhang,Zhongming Zeng,Yong Peng,John Michael David Coey,Xiufeng Han,Guoqiang Yu
DOI: https://doi.org/10.1002/aelm.202201240
IF: 6.2
2023-01-01
Advanced Electronic Materials
Abstract:The stability of skyrmions in zero external magnetic field is significant for promoting fundamental studies and device applications. Here, we develop a zero-field exchange-biased skyrmion material and integrate it into an MTJ device. An Ir layer is inserted between the antiferromagnetic and ferromagnetic layers, which plays a key role in prohibiting interlayer diffusion under thermal annealing, resulting in simultaneous enhancement of exchange bias and thermal stability. The smallest zero-field skyrmions have a size of 100 nm scale at room temperature. The zero-field skyrmion material is then integrated into a perpendicularly-magnetized MTJ, leading to the first demonstration of zero-field skyrmions in an MTJ, which is an important step toward developing skyrmion-based spintronic devices.
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