Skyrmions in Magnetic Tunnel Junctions.

Xueying Zhang,Wenlong Cai,Xichao Zhang,Zilu Wang,Zhi Li,Yu Zhang,Kaihua Cao,Na Lei,Wang Kang,Yue Zhang,Haiming Yu,Yan Zhou,Weisheng Zhao
DOI: https://doi.org/10.1021/acsami.8b03812
IF: 9.5
2018-01-01
ACS Applied Materials & Interfaces
Abstract:In this work, we demonstrate that skyrmions can be nucleated in the free layer of a magnetic tunnel junction (MTJ) with Dzyaloshinskii-Moriya interactions (DMIs) by a spin-polarized current with the assistance of stray fields from the pinned layer. The size, stability, and number of created skyrmions can be tuned by either the DMI strength or the stray field distribution. The interaction between the stray field and the DMI effective field is discussed. A device with multilevel tunneling magnetoresistance is proposed, which could pave the ways for skyrmion-MTJ-based multibit storage and artificial neural network computation. Our results may facilitate the efficient nucleation and electrical detection of skyrmions.
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