Controlled Switching of the Number of Skyrmions in a Magnetic Nanodot by Electric Fields
Zhipeng Hou,Yadong Wang,Xiaoming Lan,Sai Li,Xuejin Wan,Fei Meng,Yangfan Hu,Zhen Fan,Chun Feng,Minghui Qin,Min Zeng,Xichao Zhang,Xiaoxi Liu,Xuewen Fu,Guanghua Yu,Guofu Zhou,Yan Zhou,Weisheng Zhao,Xingsen Gao,Jun‐ming Liu
DOI: https://doi.org/10.1002/adma.202107908
IF: 29.4
2022-02-04
Advanced Materials
Abstract:Magnetic skyrmions are topological swirling spin configurations that hold promise for building future magnetic memories and logic circuits. Skyrmionic devices typically rely on the electrical manipulation of a single skyrmion, but controllably manipulating a group of skyrmions can lead to more compact and memory-efficient devices. Here, an electric-field-driven cascading transition of skyrmion clusters in a nanostructured ferromagnetic/ferroelectric multiferroic heterostructure is reported, which allows a continuous multilevel transition of the number of skyrmions in a one-by-one manner. Most notably, the transition is non-volatile and reversible, which is crucial for multi-bit memory applications. Combined experiments and theoretical simulations reveal that the switching of skyrmion clusters is induced by the strain-mediated modification of both the interfacial Dzyaloshinskii-Moriya interaction and effective uniaxial anisotropy. The results not only open up a new direction for constructing low-power-consuming, non-volatile, and multi-bit skyrmionic devices, but also offer valuable insights into the fundamental physics underlying the voltage manipulation of skyrmion clusters.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology