Abstract:Based on first‐principles calculations and nonequilibrium Green's function simulations of CrX2N4 based field‐effect transistors (FETs) with various electrodes, it is found that CrC2N4 forms an Ohmic contact with Ti electrode in the vertical direction. Furthermore, the strong Fermi level pinning effects restrict the Schottky barrier hights of CrSi2N4 based FETs to a narrow range, therefore, quasi‐Ohmic contact or Ohmic contacts are formed. Developing Ohmic contact systems or achieving low contact resistance is significant for high‐performance semiconductor devices. This work comprehensively investigates the interfacial properties of CrX2N4 (X = C, Si) based field‐effect transistors (FETs) with different metal (Ag, Au, Cu, Ni, Pd, Pt, Ti, and graphene) electrodes by using electronic structure calculations and quantum transport simulations. It is highlighted that the stronger interlayer coupling allows CrC2N4 to form an n‐type Ohmic contact with Ti electrode in the vertical direction. Furthermore, the absence of tunneling barrier at the CrC2N4–Ti interface greatly improves the electron injection efficiency. On the other hand, the studied metals form Schottky contact with CrC2N4 at the lateral interface due to Fermi level pinning (FLP) effects. Surprisingly, the strong FLP effects restrict the Schottky barrier heights of CrSi2N4‐metal contacts to a narrow range. Where Ag, Au, Ni, Pd, Pt, Ti electrodes and Ag, Ti electrodes form ideal ohmic contact with CrSi2N4 in the vertical and lateral directions, respectively, while the other metals form quasi‐ohmic contact. Ti exhibits the highest contact performance as the electrode in both CrC2N4 and CrSi2N4 based FETs. The findings may provide fundamental understanding for designing high‐performance and energy‐efficient FETs based on CrX2N4.

Suppressed Fermi Level Pinning and Wide-Range Tunable Schottky Barrier in CrX3 (X = I, Br)/2D Metal Contacts

Spin-dependent Schottky barriers and vacancy-induced spin-selective Ohmic contacts in magnetic vdW heterostructures

Interfacial Properties for a Monolayer CrS2 Contact with Metal: A Theoretical Perspective

Efficient Ohmic Contact in Monolayer CrX2N4 (X = C, Si) Based Field‐Effect Transistors

Lithium Ion Intercalation-Induced Metal-Insulator Transition in Inclined-Standing Grown 2D Non-Layered Cr2S3 Nanosheets

Enhanced Direct Exchange Interaction and Hybridization by Single-Atom Linkers for High Curie Temperature and Superior Visible-Light Harvesting in Cr3(CN3)2.

Doping Enhanced Ferromagnetism and Induced Half-Metallicity in CrI 3 Monolayer

Diverse electronic and magnetic properties of CrS2 enabling strain-controlled 2D lateral heterostructure spintronic devices

Diverse electronic and magnetic properties of CrS2 enabling novel strain-controlled 2D lateral heterostructure spintronic devices

Theoretical study of metal contacts to the monolayer ferroelectric material CuInP2S6 and its device applications

Electrostatic doping tunable magnetic transition and half-metallicity in the monolayer CrCTe 3

Interface transition from Ohmic to Schottky contact in Ti3X2/MoS2 (X= B, C, N): Insights from first-principles

Dipole-Engineering Strategy for Regulating the Electronic Contact of a Two-Dimensional SbX/Graphene (X = P, As, Bi) Van Der Waals Interface

Tunable Magnetic and Electronic Properties of CrS2/VS2 Lateral Superlattices

Bridging the gap between atomically thin semiconductors and metal leads

Formation of Ohmic contacts between ferromagnetic Cr2Ge2Te6and two-dimensional metals

Enhancing the Contact Performance of Two-Dimensional Metals/In 2 S 3 Junctions by the Self-Repair of Sulfur Vacancies in Air

Suppressing the vdW Gap‐Induced Tunneling Barrier by Constructing Interfacial Covalent Bonds in 2D Metal–Semiconductor Contacts

Formation of Ohmic contacts between ferromagnetic Cr 2 Ge 2 Te 6 and two-dimensional metals.

Electrical control of metal–insulator transition and magnetism in asymmetric multiferroic InCrX3 (X = S, Se) monolayers

Gate-tunable Contact-Induced Fermi-level Shift in Semimetal