Abstract:This paper reports recent progress in the development of a vertical MET, the purely vertical JFET based on trenched-and-implanted vertical JFET (TI-VJFET) approach that eliminates the need of epitaxial regrowth at middle of device fabrication and the need of a merged lateral MET to control the vertical MET. Different structures have been designed to target breakdown voltages ranging from 600V to 1.2kV. Vertical channel width uniformity has been studied, showing the feasibility of achieving below 0.1um variation for reasonably flat wafers of good thickness uniformity. Pitch size of the designs has been reduced compared to early report. Gate trench width has been reduced from 3.8um to 2.3um, aimed at increasing the device current capability. Fabricated device cells have been tested and packaged into multi-cell 30A TI-VJFETs which have been characterized of DC and switching characteristics at room and elevated temperatures. Very fast current rise/fall times of < 1ns were observed from RT to 200 degrees C. PSpice model for TI-VJFET has been developed and applied to the performance prediction of 3-phase SiC power inverter, suggesting a high efficiency 97.7% at 200 degrees C junction temperature without using soft-switching scheme. Preliminary experimental demonstration of a PWM-controlled three-phase inverter based on SiC TI-VJFET power board is reported.

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Novel Designed SiC Devices for High Power and High Efficiency Systems

A High Speed High Voltage Normally-off SiC Vertical JFET Power Device

Design Criteria of High-Voltage Lateral RESURF JFETs on 4H-Sic

Fabrication and Optimization of a High Speed Deep-Trench Super-Junction MOSFET with Improved EMI Performance

Device design to achieve low loss and high short-circuit capability for SiC Trench MOSFET

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4H-Sic Trench Gate Lateral MOSFET with Deep-Shallow Source Trench for Improved RESURF Dose Window and Reduced Oxide Field