Kinetic Difference in Water Photooxidation Between TiO2 and WO3 Electrodes by Rate Law Analysis

Shufeng Zhang,Boyuan Gao,Wenhua Leng

DOI: https://doi.org/10.1021/acsaem.2c03895

IF: 6.4

2023-01-01

ACS Applied Energy Materials

Abstract:The photocarrier interfacial kinetics is often considered to be a bottleneck for water photooxidation on semiconductors and has attracted extensive attention in recent years. Although tremendous efforts have been devoted into the kinetic study for a certain semiconductor, there are few works focused on the dynamic differences in water oxidation between various kinds of semiconductors. In this study, the kinetics of water oxidation on WO3 and TiO2 electrodes was investigated by a combination of photoelectrochemical techniques and then compared using the electrodes' rate law. It was found that the water oxidation on WO3 is faster than the that of TiO2 electrodes under the same surface hole density and the basic origin for this kinetic difference is attributed to greater charger transfer rate constant (kct). The greater kct is due to the fact that the WO3 electrodes have a smaller Helmholtz layer capacitance (CH), a larger space charge layer capacitance (CSC), and a greater charge transfer rate constant at flatband potential (kct0). These finding provide a better understanding of the photocarrier transfer dynamics and may enlighten rational design on exploiting the metal oxide semiconductors to achieve a solar conversion