Photoinduced Hole Hopping across CdS Quantum Dot Surfaces for Photoelectrochemical Water Oxidation

Fushuang Niu,Quan Zhou,Rong Liu,Ke Hu
DOI: https://doi.org/10.1021/acsaem.1c03651
IF: 6.4
2022-01-01
ACS Applied Energy Materials
Abstract:Water oxidation is typically the rate-limiting half-reaction for water splitting. This is particularly problematic for II-VI materials where chalcogenide oxidation competes favorably with water oxidation. Herein, we introduce and characterize a hybrid quantum dot (QD)-molecular photoanode assembly in which CdS QDs with carbazole-derived hole-transport molecules (HTs) anchoring on the surfaces were immobilized on a mesoporous TiO2 thin film. Band gap excitation of the CdS QDs resulted in excited state electron transfer to the conduction band of TiO2 (k(inj) > 10(8) s(-1)) as well as hole transfer from the CdS QD to the surface-anchored HT (k(HT) > 10(8) s(-1)). Lateral and isoenergetic HT+/HT "hole transfer" translates the oxidizing equivalents across the CdS QD surface. Transient spectroscopic measurements, as well as Monte Carlo simulations, show that rapid lateral hole hopping across CdS QDs kinetically outcompetes interfacial charge recombination by three orders of magnitude in time. When a molecular water oxidation catalyst was incorporated into the photoanode assembly, HT+/HT lateral hole hopping resulted in sustained water oxidation. When the HT molecule was present, the faradaic efficiency of water oxidation was threefold larger. Taken together, this study demonstrates that rapid hole transfer of oxidizing equivalents to a catalyst can outcompete photoanodic sulfide oxidation and paves the way for future study of HT-passivated semiconducting materials with favorable band gaps and energetics for water splitting.
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