Abstract:Halide perovskites are widely explored as efficient photoresponsive materials for optoelectronic devices. However, understanding and controlling their underlying optical and electrical properties remains limited. Here, a novel approach is developed by introducing silver sulfide (Ag2S) quantum dots (QDs) into an MAPbBr3 single crystal. The high‐quality Ag2S‐quantum‐dot‐in‐perovskite (Ag2S‐QDiP) matrixes synthesized through a laser‐assisted inverse temperature crystallization (LA‐ITC) strategy show broadband light‐sensitive wavelength from 550 to over 1000 nm, and a balanced carriers mobility facilitates their transmission and collection. A Ag2S‐QDiP‐enabled photodetector is demonstrated, which exhibits considerably enhanced responsivity and detectivity of 1.17 A W−1 and 6.24 × 1014 Jones at 532 nm, and 57.69 mA W−1 and 1.03 × 1011 Jones at 1064 nm, respectively. The enhanced performance in the near‐infrared (NIR) region can be attributed to the discrete heterojunction formed between MAPbBr3 and Ag2S QDs, which enhances the light absorption in the NIR range and facilitates photogenerated excitons’ separation at the interface. The facile synthesis process, the more balanced transport behavior, and the ensuing improved device performance highlight introducing QDs into perovskite single crystal as an efficient strategy for tuning fundamental properties of perovskite and for developing high‐efficiency broadband electronic and optoelectronic devices. A laser‐assisted inverse temperature crystallization (LA‐ITC) method is applied to synthesize the Ag2S quantum dots in MAPbBr3 matrix (Ag2S‐QDiP). The Ag2S‐QDiP shows balanced carrier mobilities, facilitated carrier generation, and transition properties due to the incorporation of Ag2S quantum dots. The photoresponse range is broadened from the visible region for pure MAPbBr3‐based photodetector to near‐infrared region for the Ag2S‐QDiP‐based one.

Antisolvent-Treated MAPbI3 and PbS Quantum Dots for High-Performance Broadband Photodetectors

Efficient Visible–Near‐Infrared Hybrid Perovskite:PbS Quantum Dot Photodetectors Fabricated Using an Antisolvent Additive Solution Process

Embedding PbS Quantum Dots in MAPbCl0.5Br2.5 Perovskite Single Crystal for Near‐infrared Detection

32.2: Invited Paper: Embedding PbS Quantum Dots (qds) in MAPbCl0.5Br2.5 Perovskite Single Crystal for Near‐infrared Detection

Enhancing the Performance of PbS:CsPbBr3 Bulk-Heterojunction Photodetectors by Treating with Imidazolium-Based Ionic Liquids.

Self-powered Photodetectors Based on CsPbBr3 Quantum Dots/organic Semiconductors/sno2 Heterojunction for Weak Light Detection

Enhanced Performance of Solution-Processed Broadband Photodiodes by Epitaxially Blending MAPbBr3 Quantum Dots and Ternary PbSxSe1-x Quantum Dots As the Active Layer.

Stable Ultra-Fast Broad-Bandwidth Photodetectors Based on Α-Cspbi3 Perovskite and NaYF4:Yb,Er Quantum Dots.

Laser‐Assisted Synthesis of Ag 2 S‐Quantum‐Dot‐in‐Perovskite Matrix and Its Application in Broadband Photodetectors

Double Active Layers Constructed with Halide Perovskite and Quantum Dots for Broadband Photodetection

High-Performance Broadband Photodetectors Combining Perovskite and Organic Bulk Heterojunction Bifunctional Layers

Quantum Dot:MXene Interacted Bulk Heterojunction for Efficient Infrared Self-powered Photodetector

CsPbBr3 Perovskite Quantum Dots/p-Gan Heterojunction for Ultraviolet-Visible Spectrum Photodetectors

High-Performance Broadband Perovskite Photodetectors Based on Ch3nh3pbi3/C8btbt Heterojunction

High-performance Solution-Processed Colloidal Quantum Dots-Based Tandem Broadband Photodetectors with Dielectric Interlayer

High Performance Solution-Processed Infrared Photodetector Based On Pbse Quantum Dots Doped With Low Carrier Mobility Polymer Poly(N-Vinylcarbazole)

High Performance CsPbBr3 Quantum Dots Photodetectors by Using Zinc Oxide Nanorods Arrays As an Electron-Transport Layer

A dual strategy to enhance the photoelectric performance of Perovskite-Based photodetectors for potential applications in optical communications

Solution‐Processed CsPbBr 3 Quantum Dots/Organic Semiconductor Planar Heterojunctions for High‐Performance Photodetectors

High‐Performance MAPbI3/PM6:Y6 Perovskite/Organic Hybrid Photodetectors with a Broadband Response

SnS Quantum Dots Enhancing Carbon-Based Hole Transport Layer-Free Visible Photodetectors