Abstract:High-performance passive devices play a critical role in the radio frequency front-end of wireless systems. Accurately characterizing the electromagnetic (EM) responses of these devices poses a formidable challenge, particularly in high-frequency design. Commercial numerical methods often demand substantial computational resources and necessitate complete recalculation for any structural modifications. This paper proposes an input skip-connections feedforward neural network (ISFNN) for the parametric modeling of passive devices. The ISFNN architecture incorporates multiple skip connections within the layer blocks, which periodically integrate the input design variables into the intermediate hidden layers. This design facilitates feature combination and enhances the extraction capability of design variables. The intermediate layers contain both the original input features and the learned feature information from preceding layers, enabling the model to effectively and robustly capture the nonlinear relationships between the design variables and EM responses. Additionally, a systematic algorithm is proposed to develop and train the ISFNN model. The ISFNN offers a unified solution for both single-physics EM analysis and EM-centric multi-physics (MP) analysis. Compared to other ANN-based models, the ISFNN achieves smaller testing errors with fewer training samples for single-physics EM modeling. Furthermore, in certain applications, conducting MP analysis is more aligned with the actual operating conditions of high-performance microwave components. The nongeometrical parameters are incorporated into the input design features. The ISFNN accurately predicts EM responses using only MP training data, without requiring additional single-physics EM data, transfer functions, or multiple mapping modules. Validation examples demonstrate the better modeling accuracy and efficiency of the ISFNN. Within the design space, the trained ISFNN can generate new MP data in just 0.02 seconds per calculation, significantly reducing time costs while maintaining high modeling precision.

Efficient Modeling Approach for Simulating Multi-Physics Responses of an Ion-Sensitive Field-Effect Transistor Using Artificial Neural Networks

A Physics-Informed Neural Networks Algorithm for Simulating Semiconductor Devices

An Artificial Neural Network Model for Electro-Thermal Effect Affected Hot Carrier Injection Reliability in 14-nm FinFETs

Modeling nanoscale MOSFETs by a neural network approach

Neural Network-Based and Modeling With High Accuracy and Potential Model Speed

A New Compact MOSFET Model Based on Artificial Neural Network with Unique Data Preprocessing and Sampling Techniques.

Modeling Nanoscale FinFET Performance by a Neural Network Method

Advanced MOSFET Model Based on Artificial Neural Network

Knowledge-based neural network SPICE modeling for MOSFETs and its application on 2D material field-effect transistors

Artificial Neural Network Models for Metal-Ferroelectric-insulator-semiconductor Ferroelectric Tunnel Junction Memristor

MOSFET Physics-Based Compact Model Mass-Produced: An Artificial Neural Network Approach

Physics-integrated Neural Network for Quantum Transport Prediction of Field-effect Transistor

ANN-Aided Data-Driven IGBT Switching Transient Modeling Approach for FPGA-Based Real-Time Simulation of Power Converters

Intelligent Modeling of Electrical Characteristics of Multi-Channel Gate All Around Silicon Nanosheet MOSFETs Induced by Work Function Fluctuation

Neural Network Method to Model Nanoscale Mosfet Characteristics

Physics-Based Electrothermal Stress Evaluation Approach of IGBT Modules Combined with Artificial Neural Network Model

Compact Modeling of Advanced Gate-All-Around Nanosheet FETs Using Artificial Neural Network

A Physics-Informed Artificial Neural Network Modeling Approach for Wide Temperature Range 4H-Sic MOSFETs

ISFNN: an Enhanced Neural Network for Parametric Modeling of Passive Devices with Input Skip-Connections

Estimating the Process Variation Effects of Stacked Gate All Around Si Nanosheet CFETs Using Artificial Neural Network Modeling Framework

ANN-Based Pad Modeling Technique for Mosfet Devices