Abstract:As the traditional scaling of silicon metal-oxide-semiconductor field-effect transistors (MOSFETs) reaches its physical limit, research efforts on novel semiconductor devices are increasingly desired. To enable the joint optimization of early-stage circuit design and process of novel devices, the rapid creation of an accurate compact model of these devices with the capability to cover process variations is required. In this work, a knowledge-based neural network (KNN) modeling method is proposed. This method separates the geometrical variables from the other input variables of the device, where the geometrical variables are modeled with physics-based analytical equations, while the remaining part is modeled by an artificial neural network. The KNN model takes advantage of the automated numerical fitting capability of the neural network and the geometrical scalability from device physics. The created KNN model is first validated with silicon MOSFET data from the industry standard BSIM6 and shows more than 20% accuracy improvement as compared with the traditional neural network model. Furthermore, MoS 2 field-effect transistors and circuits, such as ring oscillators, standard cells, and logic functional circuits, are experimentally fabricated for model verification. The results show that the KNN model is capable of predicting the electrical characteristics of devices beyond the measurement geometry and facilitates the accurate simulations of statistical circuits with respect to experimental data. This work paves the way for future circuit designs and simulations of novel semiconductor devices.

Neural Network-Based and Modeling With High Accuracy and Potential Model Speed

A Physics-Informed Neural Networks Algorithm for Simulating Semiconductor Devices

Modeling Nanoscale FinFET Performance by a Neural Network Method

Modeling nanoscale MOSFETs by a neural network approach

Modeling Cascade-able Transceiver Blocks with Neural Network for High Speed Link Simulation

Knowledge-based neural network SPICE modeling for MOSFETs and its application on 2D material field-effect transistors

Modular Neural Network-Based Models of High-Speed Link Transceivers

Neural Network Method to Model Nanoscale Mosfet Characteristics

Advanced MOSFET Model Based on Artificial Neural Network

Compact Modeling of Advanced Gate-All-Around Nanosheet FETs Using Artificial Neural Network

Cascading Neural Network Blocks of Transistor Level Transceiver Models

Artificial Neural Network Based CNTFETs Modeling

Machine Learning-Based Device Modeling and Performance Optimization for FinFETs

A New Compact MOSFET Model Based on Artificial Neural Network with Unique Data Preprocessing and Sampling Techniques.

Tiny Neural Network Representing Mosfet Physical Effect Sub-Model

Transistor Compact Model Based on Multigradient Neural Network and Its Application in SPICE Circuit Simulations for Gate-All-Around Si Cold Source FETs

A New Compact Z$^{\text{2}}$-FET Model Based on Artificial Neural Network and Its Applications

Device Modeling Based on Cost-Sensitive Densely Connected Deep Neural Networks

Compact modeling of metal–oxide TFTs based on the Bayesian search-based artificial neural network and genetic algorithm

A Non-Quasi-static Model for Nanowire Gate-All-around Tunneling Field-Effect Transistors

The Device Compact Model Based on Multi-gradient Neural Network and Its Application on MoS2 Field Effect Transistors