Abstract:Graphene has attracted great attention owing to its excellent physical and chemical properties and potential applications. Presently, we can grow large-scale single-crystal graphene on transition metal substrates, especially Cu(111) or CuNi(111) surfaces, using the chemical vapor deposition (CVD) method. To optimize graphene synthesis for large-scale production, understanding the growth mechanism at the atomic scale is critical. Herein, we summarize the theoretical studies on the roles of the metal substrate in graphene CVD growth and the related mechanisms. Firstly, the metal substrate catalyzes the carbon feedstock decomposition. The dissociation of CH4, absorption, and diffusion of active carbon species on various metal surfaces are discussed. Secondly, the substrate facilitates graphene nucleation with controllable nucleation density. The dissociation and diffusion of carbon atoms on the CuNi alloy surface with different Ni compositions are revealed. The metal substrate also catalyzes the growth of graphene by incorporating C atoms from the substrate into the edge of graphene and repairing possible defects. On the most used Cu(111), each armchair site on the edge of graphene is intended to be passivated by a Cu atom and lowers the barrier of incorporating C atoms into the graphene edge. The potential route of healing the defects during graphene CVD growth is summarized. Moreover, the substrate controls the orientation of the epitaxial graphene. The graphene edge-catalyst interaction is strong and is responsible for the orientation determination of a small graphene island in the early nucleation stage. There are three modes for graphene growth on metal substrate, i.e. embedded mode, step-attached mode and onterrace mode, and the preferred growth modes are not all alike but vary from metal to metal. On a soft metal like Cu(111), graphene tends to grow in step-attached or embedded modes and therefore has a fixed orientation relative to the metal crystal lattice. Finally, the formation of wrinkles and step bunches in graphene because of the difference in thermal expansion coefficients between graphene and the metal substrate is discussed. The large friction force and strong interaction between graphene and the substrate make it energetically unfavorable for the formation of wrinkles. Different from the formation of wrinkles, the main driving force behind metal surface step-bunching in CVD graphene growth, even in the absence of a compression strain is revealed. Although significant effort is still required to adequately understand graphene catalytic growth, these theoretical studies offer guidelines for experimental designs. Furthermore, we provide the key issues to be explored in the future.

Low-temperature growth of nanocrystalline graphene on metal thin films

Critical Crystal Growth of Graphene on Dielectric Substrates at Low Temperature for Electronic Devices.

The Growth of Graphene on Ni–Cu Alloy Thin Films at a Low Temperature and Its Carbon Diffusion Mechanism

Roles of Transition Metal Substrates in Graphene Chemical Vapor Deposition Growth

Low Temperature Metal Free Growth of Graphene on Insulating Substrates by Plasma Assisted Chemical Vapor Deposition

Low temperature critical growth of high quality nitrogen doped graphene on dielectrics by plasma-enhanced chemical vapor deposition.

Nucleation and growth of graphene at different temperatures by plasma enhanced chemical vapor deposition

Metal dependence of spontaneous graphitization growth at room temperature

Progress in Studies of Graphene Growth Mechanism on Transition-Metal Surfaces

Epitaxial Growth of 6 In. Single‐Crystalline Graphene on a Cu/Ni (111) Film at 750 °C Via Chemical Vapor Deposition

Low-Temperature Growth of Graphene by Chemical Vapor Deposition Using Solid and Liquid Carbon Sources

Low Temperature Graphene Growth

Controlled Growth of Multilayer, Few-Layer, and Single-Layer Graphene on Metal Substrates

Low-Temperature Nitrogen Doping of Nanocrystalline Graphene Films with Tunable Pyridinic-N and Pyrrolic-N by Cold-Wall Plasma-Assisted Chemical Vapor Deposition

Growth of Uniform Mono Layer Graphene Using Iron-Group Metals Via the Formation of an Antiperovskite Layer

Low Temperature Growth of Graphene on Semiconductor

Hydrogen Induced Contrasting Modes Of Initial Nucleations Of Graphene On Transition Metal Surfaces

Chemical Vapor Deposition of Graphene on Thin-Metal Films

Operando Characterization and Molecular Simulations Reveal the Growth Kinetics of Graphene on Liquid Copper during Chemical Vapor Deposition

Metals on Graphene: Interactions, Growth Morphology, and Thermal Stability

Theoretical Investigations on Hydroxyl Carbon Precursor Fueled Growth of Graphene on Transition Metal Substrates