High responsivity of VIS-NIR photodetector based on Ag 2 S/P3HT heterojunction.

Haiting Zhang,Dongdong Wei,Xiaoxian Song,Ze Xu,Fuguo Wang,Hongwen Li,Wenbao Sun,Zijie Dai,Yunpeng Ren,Yunxia Ye,Xudong Ren,Jianquan Yao
DOI: https://doi.org/10.1088/1361-6528/acb7f8
IF: 3.5
2023-01-01
Nanotechnology
Abstract:AgS quantum dot (QD) photodetectors (PDs) have attracted a lot of attention in the field of imaging system and optical communication. However, the current AgS PDs mainly works in the near-infrared band, and its detection ability in the visible band remains to be strengthened. In this paper, we used poly(3-hexylthiophene) (P3HT) with high carrier mobility and AgS QDs to construct heterojunction PD. Stronger absorption in blends with polymer P3HT compared to single AgS QDs. The optical absorption spectra show that the AgS/P3HT has strong light absorption peak at 394 and 598 nm. The results show that P3HT significantly enhances the absorption of AgS QDs from the visible to near-infrared band. The output characteristics, transfer characteristics and fast switching capability of the device at 405 nm, 532 nm and 808 nm were tested. The device has the responsivity of 6.05 A W, 83.72 A Wand 37.31 A Wunder 405 nm, 532 nm and 808 nm laser irradiation. This work plays an important role in improving the detection performance of AgS QDs and broadening its applications in photoelectric devices for weak light and wide spectrum detection.
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