[Brandeis University and its Graduate Department of Biochemistry].

V. Bonavita

1959-05-02

Abstract:

What problem does this paper attempt to address?

High-performance CsPbBr3-xClx/Si Heterojunction Photodetectors for Variable Wavelength Photodetection

Wanggao Nie,Jingyi Liu,Lairong Yan,Hao Hu,Ping Lin,Yanbin Zhang,Lingbo Xu,Peng Wang,Xiaoping Wu,Can Cui

DOI: https://doi.org/10.1007/s10854-024-13502-7

2024-01-01

Journal of Materials Science Materials in Electronics

Abstract:All inorganic perovskite CsPbX3 (X = Br, I, Cl) materials emerge as one of the popular materials in the field of optoelectronic devices due to their outstanding photoelectric properties. Their photoelectric detection performance and stability could be further improved by combining mixed halide perovskites with other semiconductor materials, achieving high-performance variable wavelength photodetectors. In this work, high-quality CsPbBr3-xClx microcrystals were successfully grown on silicon (Si) substrates by chemical vapor deposition (CVD) method. By varying the Br/Cl ratio, the prepared CsPbBr3-xClx heterojunction photodetectors exhibit excellent response time in the scale of microsecond and superior narrowband detection capability in a wide wavelength ranges and excellent environmental stability, achieving the maximum responsivity of 102.6 A/W and detectivity of 5.20 × 1012 Jones under 7.8µW /cm2 light illumination intensity. The results suggest an efficient and feasible strategy to the design and improvement of photodetectors for variable wavelength photodetection.
Self-powered Photodetectors Based on CsPbBr3 Quantum Dots/organic Semiconductors/sno2 Heterojunction for Weak Light Detection

Ben Yang,Pu Guo,Dandan Hao,Yan Wang,Li,Shilei Dai,Jia Huang

DOI: https://doi.org/10.1007/s40843-022-2155-0

2022-01-01

Science China Materials

Abstract:All-inorganic lead halide perovskite quantum dots (QDs) show great potential in the development of photodetectors (PDs) due to their excellent photoelectric properties. However, the photoresponse performance of the pure perovskite QDs-based PDs is usually limited by the poor charge transport efficiency of the perovskite QDs films. Here, high-performance self-powered PDs based on perovskite QDs and organic semiconductor PQT-12 (poly(3,3‴-didodecyl quarterthiophene)) are reported. Even in a self-powered mode, the devices can still show stable photoresponse to light signals and achieve excellent photodetection performance, including a detectivity up to 5.8 × 1012 Jones, and Ilight/Idark ratio up to 105. More importantly, the devices exhibit obvious photoresponse to weak light with intensity as low as 3 nW cm−2. To the best of our knowledge, the weak light detection ability of the device is better than most reported PDs based on perovskite QDs. In addition, the devices can be fabricated into flexible PDs with almost unchanged photocurrent under different bending angles. The overall performances of our devices are excellent among the reported self-powered PDs. This method utilized here provides new guides for developing high-performance self-powered PDs based on perovskite QDs for weak light detection.
Expanding the Spectral Responsivity of Photodetectors via the Integration of CdSe/ZnS Quantum Dots and MEH−PPV Polymer Composite

Thanh Thao Tran,Ha Trang Nguyen,Ankush Sharma,Young-Bin Cho,Manjeet Kumar,Ju-Hyung Yun

DOI: https://doi.org/10.3390/polym16162371

IF: 5

2024-08-23

Polymers

Abstract:This study investigates the energy transfer mechanism between the organic polymer poly(2-methoxy-5(2'-ethyl)heroxyphenylenevinylene) (MEH−PPV) and CdSe/ZnS core-shell quantum dots (CdSe/ZnS CSQDs). Additionally, a hybrid ZnO-based photodetector (PD) is fabricated using the composite of MEH−PPV and CdSe/ZnS CSQDs, aiming to gain deeper insights. The combination of MEH−PPV and CdSe/ZnS CSQDs facilitates a broad spectral response in PDs, spanning from the ultraviolet (UV) to the visible range. In particular, PDs with QDs in the composite demonstrate notably excellent photosensitivity to both ultraviolet (UV) light (365 nm) (~5 fold) and visible light (505 nm) (~3 fold).

polymer science
Hetero-integrated MoS 2 /CsPbBr 3 photodetector with enhanced performance via combinational modulation of grain boundary passivation and interfacial carrier separation

Yan Zhang,Chengyun Wu,Xinyang Zhou,Junchun Li,Xuyong Tao,Boyan Liu,Junwei Chen,Yajing Chang,Guoqing Tong,Yang Jiang

DOI: https://doi.org/10.1016/j.mtphys.2023.101179

IF: 11.021

2023-07-27

Materials Today Physics

Abstract:The distinguished electronic and optical properties of all-inorganic lead halide perovskites (CsPbX 3 , X = Cl, Br, I) qualify them as ideal candidates for active layer in optoelectronic devices, especially showing more competitive development prospects in photodetection with high performance. However, superior device performance and good long-term stability is still a challenge for perovskite-based photodetectors applying in practical situation. Herein, we demonstrate a novel hetero-integrated MoS 2 /CsPbBr 3 photodetector displaying efficient device performance, where the MoS 2 nanocrystals pre-synthesized by hydrothermal route were spin-coated on the surface of CsPbBr 3 films with controllable dispersion, providing effective interfacial photo-carriers separation at MoS 2 /CsPbBr 3 van der Waals heterojunction (vdWH) and significant defect passivation for perovskite grain boundaries (GBs) simultaneously, thus boosting optoelectronic performance of our device within ultraviolet (UV)-visible wavelength range, including a higher photoresponsivity (4.79 A/W), enhanced specific detectivity (8.81 × 10 12 Jones) and more durable stability than that of the pristine CsPbBr 3 photodetector. Furthermore, the fast response speed (0.17/0.22 ms) is obviously more outstanding than that of most CsPbBr 3 -based and congeneric hybrid photodetectors. These results, combined with our experimental design strategy of the device described herein, provide an efficient approach to achieve stable, high-performance photodetection using perovskite-based hybrid nanomaterial systems, thus opening up new possibilities for two-dimensional (2D) materials/perovskites hetero-integration based photovoltaic and optoelectronic applications in the future.

materials science, multidisciplinary,physics, applied
Dual Mechanism WS2‐WSe2 Lateral Monolayer Heterojunction Photodetector and Its Photoresponse Enhancement by Hybridizing with CsPbBr3 QDs

Shuang Qiao,Jihong Liu,Ruining Wang,Linjuan Guo,Shufang Wang,Anlian Pan,Caofeng Pan

DOI: https://doi.org/10.1002/adom.202300751

IF: 9

2023-06-24

Advanced Optical Materials

Abstract:A high‐performance photodetector, capable of operating in both photovoltaic and photoconductive modes, has been developed using a lateral heterojunction of WS2‐WSe2. Further advancements have been made by incorporating CsPbBr3, with greatly enhanced responsivities, detectivities, and external quantum efficiencies, as well as reduced response times. Additionally, exceptional ambient stability has been achieved. Monolayer 2D lateral heterostructures with high interface qualities and well‐defined structures are particularly promising in novel electronic and optoelectronic applications. However, the photoelectric responses are still very low, and the working and modulating mechanisms urgently need exploration. Here, a lateral monolayer heterojunction of WS2‐WSe2 is successfully prepared with an atomically sharp interface and a band alignment of type‐II structure. Intriguingly, this heterojunction photodetector (PD) achieves outstanding characteristics of photocurrent generation in both photovoltaic and photoconductive modes with responsivities (Rs) of 60.2/3.0 A W−1, detectivities (D*s) of 1.81/0.98 × 1012 Jones, and response times of 32.2/28.5 and 39.5/32.1 ms, respectively. Moreover, all‐inorganic CsPbBr3 quantum dots are introduced to substantially promote the photoelectric responses. Because of the favorable band alignment and large absorption of the CsPbBr3, and efficient carrier transfer, the Rs and D*s are substantially improved to 1307/141.3 A W−1 and 1.16/2.94 × 1013 Jones, respectively, with fantastic external quantum efficiencies of 3.59/0.388 × 105% and also shortened response times of 12.5/13.2 and 17.4/15.8 ms. In addition, the ambient stability is remarkably enhanced. This study demonstrates that the combination of 2D lateral heterojunction with all‐inorganic perovskite may bring up promising opportunities for developing high‐performance PDs.

materials science, multidisciplinary,optics
High responsivity VIS-NIR photodetector based on (PEA)2PbI4/P3HT Heterojunction

Haiting Zhang,Wenyao Wu,Xuanqi Zhong,Langlang Du,Zhendong Fu,Sun Wenbao,Jiangnan Liu,Xiaoxian Song,Jingjing Zhang,Ying Liang,Zijie Dai,Yunpeng Ren,Yunxia Ye,xudong ren,Jianquan Yao

DOI: https://doi.org/10.1088/1402-4896/ad4831

2024-05-08

Physica Scripta

Abstract:Two-dimensional (2D) Ruddlesden-Popper (RP) perovskite is an ideal platform for building high-performance photodetectors due to its unique structure, excellent stability, and tunable bandgap. However, 2D perovskite heterojunction photodetectors are still less reported. In this work, the photodetector based on (PEA)2PbI4/P3HT heterojunction was prepared by the liquid-phase solution method under air conditions, which showed a responsivity (R) of 8.38 A/W and a specific detectivity (D*) of 6.53 × 1011Jones under 808 nm light. In addition, the device has a transient response time of 79.57 μs/484 μs and a high stability performance that maintains more than 95% of the photocurrent under continuous cycling tests and shows good cyclic stability after 30 days without encapsulation. This work provides a promising strategy for extending 2D perovskite photodetectors in the VIS to NIR spectral range.

physics, multidisciplinary
Solution‐Processed CsPbBr 3 Quantum Dots/Organic Semiconductor Planar Heterojunctions for High‐Performance Photodetectors

Kaixuan Chen,Xuliang Zhang,Ping‐An Chen,Jing Guo,Mai He,Yanqin Chen,Xincan Qiu,Yu Liu,Huajie Chen,Zebing Zeng,Xiao Wang,Jianyu Yuan,Wanli Ma,Lei Liao,Thuc‐Quyen Nguyen,Yuanyuan Hu

DOI: https://doi.org/10.1002/advs.202105856

IF: 15.1

2022-03-01

Advanced Science

Abstract:Planar heterojunctions (PHJs) are fundamental building blocks for construction of semiconductor devices. However, fabricating PHJs with solution-processable semiconductors such as organic semiconductors (OSCs) is a challenge. Herein, utilizing the orthogonal solubility and good wettability between CsPbBr3 perovskite quantum dots (PQDs) and OSCs, fabrication of solution-processed PQD/OSC PHJs are reported. The phototransistors based on bilayer PQD/PDVT-10 PHJs show responsivity up to 1.64 × 104 A W-1 , specific detectivity of 3.17 × 1012 Jones, and photosensitivity of 5.33 × 106 when illuminated by 450 nm light. Such high photodetection performance is attributed to efficient charge dissociation and transport, as well as the photogating effect in the PHJs. Furthermore, the tri-layer PDVT-10/PQD/Y6 PHJs are used to construct photodiodes working in self-powered mode, which exhibit broad range photoresponse from ultraviolet to near-infrared, with responsivity approaching 10-1 A W-1 and detectivity over 106 Jones. These results present a convenient and scalable production processes for solution-processed PHJs and show their great potential for optoelectronic applications.

materials science, multidisciplinary,nanoscience & nanotechnology,chemistry
High-Performance Self-Powered Photodetector Based on the Lateral Photovoltaic Effect of All-Inorganic Perovskite CsPbBr 3 Heterojunctions

Junbei Hu,Xianjie Wang,Lei Lin,Jie Xu,Mengting Liu,Ran Wang,Xiaofeng Li,Lingling Tao,Yu Sui,Bo Song

DOI: https://doi.org/10.1021/acsami.2c16347

2022-12-24

Abstract:CsPbBr(3), an inorganic halide perovskite, has attracted great interest in recent years due to its excellent photoelectric properties. In this paper, we report a high-performance position-sensitive detector and laser communication sensor based on a CsPbBr(3)/4H-SiC heterojunction that effectively exploits the lateral photovoltaic (LPV) effect. The X-ray diffraction, X-ray photoelectron spectra, and photoluminescence data indicate that a high-quality CsPbBr(3) film has been successfully obtained...

materials science, multidisciplinary,nanoscience & nanotechnology
Perovskite Heterojunction Based on Ch3nh3pbbr3 Single Crystal for High-Sensitive Self-Powered Photodetector

Min Cao,Jiyu Tian,Zhi Cai,Lan Peng,Lei Yang,Dacheng Wei

DOI: https://doi.org/10.1063/1.4971772

IF: 4

2016-01-01

Applied Physics Letters

Abstract:Perovskite single crystals exhibit extraordinary optoelectronic performances due to their advantages such as low trap-state densities, long carrier diffusion, and large absorption coefficient, and thus, photodetectors based on perovskite single crystals have attracted much research interest. Unlike the reported one-component single-crystal perovskite photodetectors, here, we have developed a facile two-step approach to fabricate a core-shell heterojunction based on the CH3NH3PbBr3 single crystal. A photodetector made of the as-prepared perovskite heterojunction renders the feature of self-power attributed to a built-in electric field in the junction and exhibits a wavelength-dependent responsivity with a peak responsivity up to 11.5 mA W−1 under 450 nm irradiation at zero bias, which is one order of magnitude higher than the CH3NH3PbBr3 single crystal and shows a maximum external quantum efficiency of 3.17%, also higher than the reported 0.2% of the CH3NH3PbBr3 single crystal. Our work may lead to more efficient self-powered heterojunction systems based on perovskite single crystals.
A High‐Performance Photodetector Based on 1D Perovskite Radial Heterostructure

Jianfeng Zhang,Wei Zhong,Yuan Liu,Jincheng Huang,Sunbin Deng,Meng Zhang,Hoi‐Sing Kwok,Guijun Li

DOI: https://doi.org/10.1002/adom.202101504

IF: 9

2021-10-10

Advanced Optical Materials

Abstract:1D metal halide perovskites (MHPs) are known as excellent candidates for fabricating high-performance optoelectronic devices, ranging from lasers to photodetectors (PDs). Nevertheless, their inherent limitations, such as high binding energy and limited carrier mobility, have restricted their further improvement in performance. To tackle this issue, hybrid MHP microwires (MWs) are fabricated by combining MHP MWs and an organic semiconductor via a facile self-assembly method, forming a radial heterojunction. Meanwhile, an ultrathin insulating organic layer is introduced as an interlayer between MHP MWs and the organic semiconductor. The synthesized hybrid MWs are further applied in rigid and flexible PDs, which demonstrated a high light/dark current on-off ratio (>2 × 105), a high responsivity (>400 A W−1), and robust bending stability. These impressive results make the hybrid MHP MWs with the unique radial heterostructure promising building blocks for high-performance future optoelectronics.

materials science, multidisciplinary,optics
High performance CsBi3I10/PCBM bulk heterojunction perovskite photodetector

Hongliang Zhao,Yating Zhang,Jianquan Yao

DOI: https://doi.org/10.1364/AO.510980

2024-02-10

Abstract:Lead halide perovskites (LHPs) have been extensively studied due to their remarkable optoelectronic performance. However, the toxicity of a lead ion to humans and its instability under ambient conditions render lead-based halide perovskite an unsuitable material for commercialization. Meanwhile, lead-free halide perovskite (LFHP) devices generally exhibit poor performance. Therefore, enhancing photoelectric conversion capacity is the most important issue that needs to be addressed. Here, we propose a photodetector (PD) fabricated using C s B i 3 I 10/p h e n y l-C 61-butyric acid methyl ester (PCBM) bulk heterojunction as the active layer. The PD illuminated under 532 nm can reach a high responsivity (1.54 A/W) at -2V bias, while at 2 V bias, the PD reaches a higher responsivity (224.40 A/W). All of those results suggest that C s B i 3 I 10/P C B M bulk heterojunctions hold enormous potential in substituting for LHPs in optoelectronic devices.
Ultrasensitive Organic‐Modulated CsPbBr3 Quantum Dot Photodetectors Via Fast Interfacial Charge Transfer

Jingzhou Li,Junmin Xia,Yuan Liu,Siwei Zhang,Changjiu Teng,Xuan Zhang,Bilu Liu,Shichao Zhao,Shixi Zhao,Baohua Li,Guichuan Xing,Feiyu Kang,Guodan Wei

DOI: https://doi.org/10.1002/admi.201901741

IF: 5.4

2019-01-01

Advanced Materials Interfaces

Abstract:The integration of organic materials with colloidal quantum dots (QDs) has the merits the advantages of the molecular diversity and photoelectric tunability for ultrasensitive photodetector applications. Herein, a uniform CsPbBr3 QD layer is sandwiched between the same poly‐(N, N′‐bis‐4‐butylphenyl‐N, N′‐bisphenyl) benzidine (Poly‐TPD) and phenyl‐C61‐butyric acid methyl ester (PCBM) (1:1) organic blend films. The CsPbBr3 QD layer efficiently absorbs the excitation light, where the generated exciton can sufficiently diffuse to the interface of QD and organic blend layers for efficient charge separation and effective gate modulation. Owing to the desirable heterojunction at the interface, the dark current is substantially suppressed, while the photocurrent is increased in comparison with those of pristine QDs photodetectors. The ultrafast charge transfer time (≈300 ps) from QDs to organic blend layer measured by the time‐resolved transient absorption spectroscopy is potentially benefit the enhanced electron–hole pair dissociation. The solution‐processed, organic (Poly‐TPD:PCBM blend)‐modulated CsPbBr3 QDs photodetector are exhibited ultrasensitive photoresponse abilities in terms of in terms of noise equivalent power (NEP = 1 × 10−16 W Hz−0.5), ILight/IDark ratio (2 × 103), and the a specific detectivity (D* = 4.6 × 1013 Jones). The results will be a starting point for ultrasensitive next‐generation light detection technologies.
Broadband Photodetector Based on Inorganic Perovskite CsPbBr 3 /GeSn Heterojunction

Hui Cong,Xinbo Chu,Fengshuo Wan,Zema Chu,Xiaoyu Wang,Yao Ma,Jizhong Jiang,Liang Shen,Jingbi You,Chunlai Xue

DOI: https://doi.org/10.1002/smtd.202100517

IF: 12.4

2021-06-23

Small Methods

Abstract:Photodetectors with broadband response spectrum have attracted great interest in many application areas such as imaging, gas sensing, and night vision. Here, a high performance broadband photodetector is demonstrated with inorganic perovskite CsPbBr3/GeSn heterojunction, detection range can be covered from 450 to 2200 nm. The responsivity of heterojunction device can achieve as high as 129 mA W−1 under illuminated light of 532 nm, which is 4.92 times larger than that of a GeSn based device. As the CsPbBr3 can also act as anti-reflective coating for infrared wavelength, the infrared band responsivity at wavelength of 2200 nm can also be raised by 1.42 times. In addition, the device with all inorganic components is showed good stability, while keeping in the dry environment, the device can sustain its 90% original after 550 h storage. These results show the inorganic perovskite/GeSn heterojunction device is of great potential in broadband photodetection with high responsivity.

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
High performance photodetectors by integrating CsPbBr3 perovskite directly on the germanium wafer

Guoliang Xiong,Gang Zhang,Wenlin Feng

DOI: https://doi.org/10.1016/j.materresbull.2024.112959

IF: 5.6

2024-06-21

Materials Research Bulletin

Abstract:Lead halide perovskites are a promising candidate for the development of novel optoelectronic devices. Although substantial development has been achieved after years of research, it is still a challenge to prepare large-area high-quality CsPbBr 3 thin films by simple processes. In this work, CsPbBr 3 film can be used as a UV–Vis absorption active layer of heterojunction photodetector and a Ge-based infrared anti-reflective coating to optimize the photodetection performance of the device. CsPbBr 3 /p-Ge heterojunction photodetector exhibits self-powered (0 V) and broadband characteristics (365–1550 nm), the responsivity is 64 mA/W and the specific detectivity is 1.2 × 10 12 Jones under 0 V bias and 1550 nm illumination. The rise and decay times of the device are 12.3 μs and 13.4 μs under 1310 nm illumination and 20 kHz operating frequency, respectively. This work further promotes the potential application and development of CsPbBr 3 perovskites in integrated optoelectronic devices.

materials science, multidisciplinary
A high-performance photodetector based on a ZnO/CsPbBr3 quantum-dot-level-contact hybrid sandwich structure

Song Wang,Shuhua Yang,Zenglong Xu,Huiyan Xu,Guangbin Duan,Degang Zhao,Xiutong Wang,Bingqiang Cao

DOI: https://doi.org/10.1039/d4tc03359k

IF: 6.4

2024-11-20

Journal of Materials Chemistry C

Abstract:Perovskite quantum dot photodetectors have attracted significant attention due to their splendid electronic and optical properties. However, the nonradiative recombination in CsPbBr 3 quantum dot (QD) thin films is very severe, which limits their performance. To solve this problem, a ZnO/CsPbBr 3 quantum-dot-level-contact hybrid sandwich structure is designed, which enlarges the contact area between the ZnO quantum dot (QD) electron transport layer (ETL) and CsPbBr 3 QD absorption layer, promoting the charge separation efficiency and improving the photoelectric conversion efficiency. The photodetector based on the ZnO/CsPbBr 3 quantum-dot-level-contact hybrid sandwich structure exhibits a high on/off ratio of 1.52 × 10 3 , an enhanced responsivity of 79.5 mA W −1 , and a superior specific detectivity of 3.97 × 10 11 Jones. The quantum-dot-level-contact designed strategy for this photodetector may blaze a trail for high-efficiency optoelectronic devices.

materials science, multidisciplinary,physics, applied
High-Performance Perovskite Photodetectors Based on CH3NH3PbBr3 Quantum Dot/TiO2 Heterojunction

Rajeev Ray,Nagaraju Nakka,Suman Kalyan Pal

DOI: https://doi.org/10.48550/arXiv.2006.06209

2020-06-11

Applied Physics

Abstract:Organo-lead halide perovskite materials have opened up a great opportunity to develop high performance photodetectors because of their superior optoelectronic properties. The main issue with perovskite-only photodetector is severe carrier recombination. Integration of perovskite with high-conductive materials such as graphene or transition metal sulfides certainly improved the photoresponsivity. However, achieving high overall performance remains a challenge. Here, an improved photodetector is constructed by perovskite quantum dots (QDs) and atomic layer deposited (ALD) ultrathin TiO2 films. The designed CH3NH3PbBr3 QD/TiO2 bilayer device displays inclusive performance with on/off ratio of 6.3x102, responsivity of 85 AW-1, and rise/decay time of 0.09/0.11 s. Furthermore, we demonstrate that interface plays a crucial role in determining the device current and enhance the overall performance of heterostructure photodetectors through interface engineering. We believe that this work can provide a strategy to accelerate development of high-performance solution-processed perovskite photodetectors.
High-performance ultraviolet detector based on self-assembled 3D/2D perovskite heterostructure

Haiyan Wang,Mengxin Ning,Qiaohe Wang,Yachuan Liang,Sen Li,Zijiong Li,Lingli Wang,Yan Wang,Liying Jiang

DOI: https://doi.org/10.1039/d4ra05576d

2024-08-27

Abstract:Heterogeneous assembly of metal halide perovskites (MHPs) structures offers convenience for promoting the interfacial properties of perovskite heterojunctions, which have been widely used in the new generation of photoelectric devices. In this study, three-dimensional (3D) CsPbBr3 quantum dots (CPB QDs) were epitaxially grown on two-dimensional (2D) (BA)2PbBr4 nanoplates (BPB NPs) via self-assembly in a toluene mixing solution. The morphological, structural, and optical properties of the synthesized structure reveal that a highly-qualified interface and coherence were formed between the two different perovskites. These heterostructures (HSs) facilitate the separation and transportation of electrons and holes in opposite directions. Based on this property, a high-performance ultraviolet light detector was fabricated by depositing a layer of CPB@BPB film on a textured silicon (T-Si) substrate. The prepared CPB@BPB/T-Si detector has shown enhanced properties i.e. quick response time, high responsivity (6.9 A W-1), high detection rate (3.17 × 109 jones), and low detection limit (0.24 μW cm-2). This enhanced performance could be attributed to the large light-absorbing area, effective carrier transport channels in BPB NPs, and improved interfacial properties of the CPB@BPB HS.
All‐Inorganic CsPbBr 3 Perovskite Nanocrystals/2D Non‐Layered Cadmium Sulfide Selenide for High‐Performance Photodetectors by Energy Band Alignment Engineering

Mingfa Peng,Yulong Ma,Lei Zhang,Shan Cong,Xuekun Hong,Yiheng Gu,Yawei Kuang,Yushen Liu,Zhen Wen,Xuhui Sun

DOI: https://doi.org/10.1002/adfm.202105051

IF: 19

2021-07-20

Advanced Functional Materials

Abstract:Perovskites have attracted intensive attention as promising materials for the application in various optoelectronic devices due to their large light absorption coefficient, high carrier mobility, and long charge carrier diffusion length. However, the performance of the pure perovskite nanocrystals-based device is extremely restricted by the limited charge transport capability due to the existence of a large number of the grain boundary between perovskite nanocrystals. To address these issues, a high-performance photodetector based on all-inorganic CsPbBr3 perovskite nanocrystals/2D non-layered cadmium sulfide selenide heterostructure has been demonstrated through energy band engineering with designed typed-II heterostructure. The photodetector exhibits an ultra-high light-to-dark current ratio of 1.36 × 105, a high responsivity of 2.89 × 102 A W−1, a large detectivity of 1.28 × 1014 Jones, and the response/recovery time of 0.53s/0.62 s. The enhancement of the optoelectronic performance of the heterostructure photodetector is mainly attributed to the efficient charge carrier transfer ability between the all-inorganic CsPbBr3 perovskites and 2D cadmium sulfide selenide resulting from energy band alignment engineering. The charge carriers' transfer dynamics and the mechanism of the CsPbBr3 perovskites/2D non-layered nanosheets interfaces have also been studied by state-state PL spectra, fluorescence lifetime imaging microscopy, time-resolved photoluminescence spectroscopy, and Kelvin probe force microscopy measurements.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Solution-processed, flexible and broadband photodetector based on CsPbBr3/PbSe quantum dot heterostructures

Jinming Hu,Shengyi Yang,Zhenheng Zhang,Hailong Li,Chandrasekar Perumal Veeramalai,Muhammad Sulaman,Muhammad Imran Saleem,Yi Tang,Yurong Jiang,Libin Tang,Bingsuo Zou

DOI: https://doi.org/10.1016/j.jmst.2020.06.047

IF: 10.319

2021-03-01

Journal of Materials Science and Technology

Abstract:A facile heterostructure arrays construction strategy is presented.Photodetectors based on CsPbBr3/PbSe quantum dot heterostructure arrays exhibit high performance from UV to LW-IR regions, excellent flexibility and stability.The response time of the device is shorten more than three orders of magnitude as that of pristine PbSe.Improved exciton dissociation and carrier transfer enhance the device performance.Due to their promising applications in foldable displays, optical communication equipment and environmental monitoring systems, flexible and broadband optoelectronic devices have gained extensive attention in recent years. Here, a flexible and broadband photodetector based on CsPbBr3/PbSe quantum dot (QD) heterostructures is firstly presented. The integrated QD heterostructures possess consecutive detection range from ultraviolet (UV) to long-wavelength infrared (LW-IR) regions with efficient light absorption and chemical stability, in comparison with the pristine PbSe QDs. Systematic material characterizations reveal the improved exciton dissociation, carrier transport and carrier lifetime of the QD heterostructures. Flexible photodetector Ag/CsPbBr3/PbSe/Ag demonstrate a high responsivity of 7.17 A/W with a specific detectivity of 8.97 × 1012 Jones under 25 μW/cm2 365 nm illumination at 5 V. Furthermore, it could maintain 91.2% (or 94.9%) of its initial performance even after bending for thousands of times (or exposing in ambient air for 4 weeks). More importantly, its response time is shortened more than three orders of magnitude as that of pristine PbSe QDs-based photodetectors. Therefore, it provides a feasible and promising method for the next-generation high-performance broadband photodetectors via constructing heterostructures of various QDs.Download : Download high-res image (138KB)Download : Download full-size image

materials science, multidisciplinary,metallurgy & metallurgical engineering
High-performance and stable hybrid photodetector based on a monolayer molybdenum disulfide (MoS2)/nitrogen doped graphene quantum dots (NH2 GQDs)/all-inorganic (CsPbBr3) perovskite nanocrystals triple junction

Hassan Algadi,Tanmoy Das,Junna Ren,Handong Li

DOI: https://doi.org/10.1007/s42114-023-00634-3

IF: 11.806

2023-02-17

Advanced Composites and Hybrid Materials

Abstract:A high-performance and stable hybrid photodetector (PD) based on a monolayer MoS2/NH2 GQDs/CsPbBr3 triple junction is demonstrated in this work. The NH2 GQDs was introduced between the monolayer MoS2 and CsPbBr3 to enhance carrier transport and separation process, and optical absorption in the triple junction. The MoS2/NH2 GQDs/CsPbBr3 triple junction was characterized with several techniques. The ultraviolet–visible (UV–vis) and photoluminescence (PL) spectrometers reveal that the absorption and emission of the triple junction have significantly enhanced compared with that of the MoS2/CsPbBr3 bilayer junction, without the NH2 GQDs. In addition, the temperature-dependent photoluminescence (TDPL) confirms that the generated excitons in the hybrid triple structure tend to separate more easily during the device operation process. The hybrid photodetector shows a responsivity (R = 9.39 A/W), specific detectivity (D* = 3.32 × 1012 J), and external quantum efficiency (EQE = 791%). Moreover, the performance of the hybrid photodetector not only outdo the performance of reported PDs based on 2D material (2DM)/perovskite and 2DM/2DM bilayer heterostructure, but also performance of PDs based on 2DM/2DM/2DM and silicon/2DM/2DM triple layer heterostructure. The enhanced performance of the hybrid PD was due to the excellent alignment between the MoS2, NH2 GQDs, and CsPbBr3, which enabled the triple junction to reduce recombination process and increase photon-absorption rate. These results pave the way for incorporating the NH2 GQDs with 2DM and perovskite to fabricate low-cost and high-performance optoelectronics.

nanoscience & nanotechnology,materials science, composites

[Brandeis University and its Graduate Department of Biochemistry].

High-performance CsPbBr3-xClx/Si Heterojunction Photodetectors for Variable Wavelength Photodetection

Self-powered Photodetectors Based on CsPbBr3 Quantum Dots/organic Semiconductors/sno2 Heterojunction for Weak Light Detection

Expanding the Spectral Responsivity of Photodetectors via the Integration of CdSe/ZnS Quantum Dots and MEH−PPV Polymer Composite

Hetero-integrated MoS 2 /CsPbBr 3 photodetector with enhanced performance via combinational modulation of grain boundary passivation and interfacial carrier separation

Dual Mechanism WS2‐WSe2 Lateral Monolayer Heterojunction Photodetector and Its Photoresponse Enhancement by Hybridizing with CsPbBr3 QDs

High responsivity VIS-NIR photodetector based on (PEA)2PbI4/P3HT Heterojunction

Solution‐Processed CsPbBr 3 Quantum Dots/Organic Semiconductor Planar Heterojunctions for High‐Performance Photodetectors

High-Performance Self-Powered Photodetector Based on the Lateral Photovoltaic Effect of All-Inorganic Perovskite CsPbBr 3 Heterojunctions

Perovskite Heterojunction Based on Ch3nh3pbbr3 Single Crystal for High-Sensitive Self-Powered Photodetector

A High‐Performance Photodetector Based on 1D Perovskite Radial Heterostructure

High performance CsBi3I10/PCBM bulk heterojunction perovskite photodetector

Ultrasensitive Organic‐Modulated CsPbBr3 Quantum Dot Photodetectors Via Fast Interfacial Charge Transfer

Broadband Photodetector Based on Inorganic Perovskite CsPbBr 3 /GeSn Heterojunction

High performance photodetectors by integrating CsPbBr3 perovskite directly on the germanium wafer

A high-performance photodetector based on a ZnO/CsPbBr3 quantum-dot-level-contact hybrid sandwich structure

High-Performance Perovskite Photodetectors Based on CH3NH3PbBr3 Quantum Dot/TiO2 Heterojunction

High-performance ultraviolet detector based on self-assembled 3D/2D perovskite heterostructure

All‐Inorganic CsPbBr 3 Perovskite Nanocrystals/2D Non‐Layered Cadmium Sulfide Selenide for High‐Performance Photodetectors by Energy Band Alignment Engineering

Solution-processed, flexible and broadband photodetector based on CsPbBr3/PbSe quantum dot heterostructures

High-performance and stable hybrid photodetector based on a monolayer molybdenum disulfide (MoS2)/nitrogen doped graphene quantum dots (NH2 GQDs)/all-inorganic (CsPbBr3) perovskite nanocrystals triple junction