Large Room-Temperature Magnetoresistance in Van Der Waals Ferromagnet/Semiconductor Junctions

Wenkai Zhu,Shihong Xie,Hailong Lin,Gaojie Zhang,Hao Wu,Tiangui Hu,Ziao Wang,Xiaomin Zhang,Jiahan Xu,Yujing Wang,Yuanhui Zheng,Faguang Yan,Jing Zhang,Lixia Zhao,Amalia Patane,Jia Zhang,Haixin Chang,Kaiyou Wang

DOI: https://doi.org/10.1088/0256-307x/39/12/128501

2022-01-01

Abstract:A magnetic tunnel junction (MTJ) is the core component in memory technologies, such as the magnetic random-access memory, magnetic sensors and programmable logic devices. In particular, MTJs based on two-dimensional van der Waals (vdW) heterostructures offer unprecedented opportunities for low power consumption and miniaturization of spintronic devices. However, their operation at room temperature remains a challenge. Here, we report a large tunnel magnetoresistance (TMR) of up to 85% at room temperature (T = 300 K) in vdW MTJs based on a thin (< 10 nm) semiconductor spacer WSe2 layer embedded between two Fe3GaTe2 electrodes with intrinsic above-room-temperature ferromagnetism. The TMR in the MTJ increases with decreasing temperature up to 164% at T = 10 K. The demonstration of TMR in ultra-thin MTJs at room temperature opens a realistic and promising route for next-generation spintronic applications beyond the current state of the art.