Narrowing the Band Gap and Suppressing Electron-Hole Recombination in Β-Fe2o3 by Chlorine Doping.

Gaoxiang He,Linguo Lu,Ningsi Zhang,Wangxi Liu,Zhongfang Chen,Zhaosheng Li,Zhigang Zou
DOI: https://doi.org/10.1039/d2cp04723c
IF: 3.3
2023-01-01
Physical Chemistry Chemical Physics
Abstract:The effects of halogen (F, Cl, Br, I, and At) doping in the direct-band-gap β-Fe2O3 semiconductor on its band structures and electron-hole recombination have been investigated by density functional theory. Doping Br, I, and At in β-Fe2O3 leads to transformation from a direct-band-gap semiconductor to an indirect-band-gap semiconductor because their atomic radii are too large; however, F- and Cl-doped β-Fe2O3 remain as direct-band-gap semiconductors. Due to the deep impurity states of the F dopant, this study focuses on the effects of the Cl dopant on the band structures of β-Fe2O3. Two impurity levels are introduced when Cl is doped into β-Fe2O3, which narrows the band gap by approximately 0.3 eV. After doping Cl, the light-absorption edge of β-Fe2O3 redshifts from 650 to 776 nm, indicating that its theoretical solar to hydrogen efficiency for solar water splitting increases from 20.6% to 31.4%. In addition, the effective mass of the holes in halogen-doped β-Fe2O3 becomes significantly larger than that in undoped β-Fe2O3, which may suppress electron-hole recombination.
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