Abstract:By the pulsed, heterodyned, and modulated laser illuminations, the impulse and noise responses of O-band germanium (Ge) p-i-n waveguide photodetector (WPD) with different transmission-line designs are characterized for receiving the NRZ-OOK data beyond 60 Gbits. The Ge lateral p-i-n WPD reveals an optical responsivity of 0.63-0.74 AW at 1327.5 nm under 1.8 V bias.The noise equivalent power (NEP) is increased from 0.11 to 0.2 pWHz by shrinking the transmission-line contact electrode length from 280 to 80 m. After optimizing the transmission-line designs with shorter length and less right corner number (C) between PD and bonding pad, the Ge lateral p-i-n WPD improves its RLC response to suppress its switching time with broadened receiving bandwidth. Shrinking the connecting transmission-line length from 280 m to 80 m extends the flattened S11 spectral response from 51 to 57 GHz by up-shifting the inductor inductor-induced frequency notch from 58 to 61 GHz, as confirmed by the shrank spiral curve in the Smith chart with the decreased inductance by shortening the transmission-line electrode. The dual-wavelength optical heterodyne analysis demonstrates that the Ge p-i-n WPD significantly improves its analog receiving bandwidth from 29.5 to 44.3 GHz measured at 6-dB decay. The sub-ps laser pulse illumination observes that the Ge p-i-n WPD response shortens its impulse response from 23.14 to 19.92 ps by reducing the contact inductor length (by 200 m) and right corner number (C) from 4 to 2) of its electrode. When receiving the optical NRZ-OOK data stream, the long-electrode (L 280 m, C 4) device reveals only 53-Gbits receiving performance. The short-electrode (L 80 m, C 2) Ge lateral p-i-n WPD with significantly reduced inductance successfully receives the NRZ-OOK data beyond 56 Gbits and 60 Gbits under error-free communication criterion of BER<1012 and BER<109, respectively.

Single Lane Beyond 400 Gbit/s Optical Direct Detection Based on a Sidewall-doped Ge-Si Photodetector

200 Gb/s Optical-Amplifier-Free IM/DD Transmissions Using a Directly Modulated O-Band DFB+R Laser Targeting LR Applications

Germanium Photodetector with Enhanced Photo-response at the L-band and Beyond for Integrated Photonic Applications

40Gbps Optical Receiver Based on Germanium Waveguide Photodetector Hybrid-Integrated with 90nm CMOS Amplifier

High-Power Ge/Si Waveguide Photodetector

Photo Detection and Modulation from 1,550 to 2,000 Nm Realized by a GeSn/Ge Multiple-Quantum-well Photodiode on a 300-Mm Si Substrate

Beyond 100-Gb/s Direct-detection Transmission Using an Optical Receiver Co-integrated with a 28-Nm CMOS Gain-tunable Fully-differential TIA

High-speed Ge-on-GaAs Photodetector

High-Speed Receiver Based on Waveguide Germanium Photodetector Wire-Bonded to 90nm Soi Cmos Amplifier

High-speed GeSn Resonance Cavity Enhanced Photodetectors for a 50 Gbps Si-based 2 Μm Band Communication System

Grating and Hole-Array Enhanced Germanium Lateral P-I-n Photodetectors on an Insulator Platform

Ge p-i-n Photodiode as 60-Gbit/s Optical NRZ-OOK Data Receiver

Waveguide-integrated PdSe2 photodetector with high responsivity and speed in the near-infrared range across the O+E+S+C bands

Up to 168-Gb/s PAM-4 direct detection transmission with silicon travelling wave Mach-Zehnder modulator.

High-performance waveguide Ge/Si avalanche photodiode with a lateral separate-absorption-charge-multiplication structure

High-efficiency GeSn/Ge Multiple-Quantum-well Photodetectors with Photon-Trapping Microstructures Operating at 2 Μm.

High-Speed Compact Plasmonic-PdSe<sub>2</sub> Waveguide-Integrated Photodetector

High speed GeSn resonance cavity enhanced photodetectors for 50 Gbps Si-based 2 μm band communication system

Si-substrate Vertical-Structure InGaN/GaN Micro-Led-based Photodetector for Beyond 10 Gbps Visible Light Communication

Four-Dimensional Silicon Photonic Dual-Polarization Direct Detection Receiver