Dual Topology of Dirac Electron Transport and Photogalvanic Effect in Low-Dimensional Topological Insulator Superlattices.

Hao-Pu Xue,Rui Sun,Xu Yang,Andrew Comstock,Yangrui Liu,Binghui Ge,Jia-Nan Liu,Yan-Sheng Wei,Qing-Lin Yang,Xue-Song Gai,Zi-Zhao Gong,Zong-Kai Xie,Na Li,Dali Sun,Xiang-Qun Zhang,Wei He,Zhao-Hua Cheng
DOI: https://doi.org/10.1002/adma.202208343
IF: 29.4
2023-01-01
Advanced Materials
Abstract:Dual topological insulators, simultaneously protected by time-reversal symmetry and crystalline symmetry, open great opportunities to explore different symmetry-protected metallic surface states. However, the conventional dual topological states located on different facets hinder integration into planar opto-electronic/spintronic devices. Here, dual topological superlattices (TSLs) Bi2Se3-(Bi-2/Bi2Se3)(N) with limited stacking layer number N are constructed. Angle-resolved photoelectron emission spectra of the TSLs identify the coexistence and adjustment of dual topological surface states on Bi2Se3 facet. The existence and tunability of spin-polarized dual-topological bands with N on Bi2Se3 facet result in an unconventionally weak antilocalization effect (WAL) with variable WAL coefficient alpha (maximum close to 3/2) from quantum transport experiments. Most importantly, it is identified that the spin-polarized surface electrons from dual topological bands exhibit circularly and linearly polarized photogalvanic effect (CPGE and LPGE). It is anticipated that the stacked dual-topology and stacking layer number controlled bands evolution provide a platform for realizing intrinsic CPGE and LPGE. The results show that the surface electronic structure of the dual TSLs is highly tunable and well-regulated for quantum transport and photoexcitation, which shed light on engineering for opto-electronic/spintronic applications.
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