Abstract:Magnetic skyrmions are topologically protected spin textures with nanoscale dimensions. They hold great promises as the building blocks for new generations of racetrack memories and computing devices due to their prominent properties. However, skyrmionic devices fabricated within the framework of conventional lithography usually suffer from magnetic disorders at material boundaries where spin disorders can easily pin and destroy magnetic skyrmions. In the present work, a new paradigm is demonstrated that enables the precise patterning and control of micro-scale skyrmion bubble devices using the domain walls rather than the physical boundaries of the material. Such a paradigm patterns the background magnetic domain to stage the skyrmion motion, which is precise, reconfigurable, nondestructive, and can resolve the conventional issues introduced by disorders. This paradigm is demonstrated by implementing a skyrmion diode using a precisely patterned asymmetric racetrack defined by magnetic domains. The interaction between a moving skyrmion and the staging domain walls is well understood by both skyrmion motion experiments and micromagnetic simulations. Such a new paradigm serves as a crucial foundation for device applications of magnetic skyrmions in general. The new paradigm that enables the precise patterning and control of skyrmion devices using the domain walls rather than the physical boundaries of the material is demonstrated. The paradigm patterns the background magnetic domain to stage the skyrmion motion, which can resolve the conventional issues introduced by disorders. A skyrmion diode using precisely patterned racetrack is defined by magnetic domains. image

Realization of the Skyrmionic Logic Gates and Diodes in the Same Racetrack with Enhanced and Modified Edges

Skyrmion-Based Reconfigurable Logic Gates and Diodes in a Racetrack with Rare Metals and a Notch

Skyrmion-based Reconfigurable Logic Gates and Diodes in a Racetrack with Hard Magnetic Material and a Notch

Skyrmions-based Logic Gates in One Single Nanotrack Completely Reconstructed Via Chirality Barrier

Current-driven magnetic skyrmion diodes controlled by voltage gates in synthetic antiferromagnets

Current Induced Dynamics of Multiple Skyrmions with Domain Wall Pair and Skyrmion-based Majority Gate Design

High-density racetrack memory based on magnetic skyrmion bags controlled by voltage gates

Confinement and Protection of Skyrmions by Patterns of Modified Magnetic Properties.

Manipulation of Skyrmion Motion Dynamics for Logical Device Application Mediated by Inhomogeneous Magnetic Anisotropy

Antiferromagnetic skyrmion-based logic gates controlled by electric currents and fields

Skyrmions-based Magnetic Racetrack Memory

Reconfigurable Skyrmion-Based Logic Gates: Versatile Design and Full-Scale Implementation

Designing and Constructing a Skyrmion Diode Device Via Antiferromagnetic Exchange Bias Engineering

Magnetic skyrmionium diode with a magnetic anisotropy voltage gating

Programmable skyrmion logic gates based on skyrmion tunneling

Controlled Modification of Skyrmion Information in a Three-Terminal Racetrack Memory

Skyrmion Domain Wall Collision and Domain Wall-Gated Skyrmion Logic

Magnetic skyrmion nucleation via current injection in confined nanotrack with modified perpendicular anisotropy region

Complementary Skyrmion Racetrack Memory with Voltage Manipulation

Positional Stability of Skyrmions in a Racetrack Memory with Notched Geometry

Writing skyrmion at a specific position in synthetic antiferromagnetic racetrack by voltage