Complementary Skyrmion Racetrack Memory with Voltage Manipulation

Wang Kang,Chentian Zheng,Yangqi Huang,Xichao Zhang,Yan Zhou,Weifeng Lv,Weisheng Zhao
DOI: https://doi.org/10.1109/led.2016.2574916
IF: 4.8157
2016-01-01
IEEE Electron Device Letters
Abstract:Magnetic skyrmion holds promise as information carriers in the next-generation memory and logic devices, owing to the topological stability, small size, and extremely low current needed to drive it. One of the most potential applications of skyrmion is to design racetrack memory (RM), named Sk-RM, instead of utilizing domain wall. However, current studies face some key design challenges, e.g., skyrmion manipulation, data representation, and synchronization. To address these challenges, we propose here a complementary Sk-RM structure with voltage manipulation. Functionality and performance of the proposed design are investigated with micromagnetic simulations.
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