Writing skyrmion at a specific position in synthetic antiferromagnetic racetrack by voltage

Shan Qiu,Jiahao Liu,Yabo Chen,Xuelei Qi,Liang Fang
DOI: https://doi.org/10.1016/j.jmmm.2022.169144
IF: 3.097
2022-07-01
Journal of Magnetism and Magnetic Materials
Abstract:Site-specific writing and directional movement of skyrmion in a magnetic stripe are very important for skyrmion-based racetrack memory. In this paper, we propose a system composed of circular heterostructure and a synthetic antiferromagnet racetrack where the circular heterostructure is fabricated at one end of the racetrack. The skyrmion can be firstly written by the voltage at the fixed-point position and then be driven by the current induced spin–orbit torques. A skyrmion is first nucleated in the ferromagnetic layer of the circular heterostructure by using voltage control magnetic anisotropy effect. In the meanwhile, an antiferromagnetic skyrmion is generated by antiferromagnetic exchange coupling from the magnetic layer of the circular heterostructure. Subsequently, the antiferromagnetic skyrmion is shifted straightly in the synthetic antiferromagnetic racetrack by the current-generated spin–orbit torques. This work provides a promising method for the fixed-point writing skyrmions in the current-driven skyrmion racetrack. Meanwhile, it provides theoretical guidance for the experimental research of skyrmionic storage and logic device.
materials science, multidisciplinary,physics, condensed matter
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