Abstract:Transition-metal dichalcogenides (TMDs) monolayers have been considered as important two-dimensional semiconductor materials for the study of fundamental physics in the field of spintronics. However, the out-of-plane mirror symmetry in TMDs may constrain electrons' degrees of freedom and it may limit spin-related applications. Recently, a newly synthesized Janus TMDs MoSSe was found to intrinsically possess both the in-plane inversion and the out-of-plane mirror-symmetry breaking. Here we performed first-principles calculations in order to systematically investigate the electronic band structures of a series of Janus monolayer TMDs with chemical formula $MXY\phantom{\rule{0.16em}{0ex}}(M=\mathrm{Mo},\phantom{\rule{0.16em}{0ex}}\mathrm{W}\phantom{\rule{0.16em}{0ex}}\mathrm{and}\phantom{\rule{0.16em}{0ex}}X,Y=\mathrm{S},\phantom{\rule{0.16em}{0ex}}\mathrm{Se},\phantom{\rule{0.16em}{0ex}}\mathrm{Te})$. It is found that they possess robust electronic properties like their parent phases. We explored also the effect of perpendicular external electric field and in-plane biaxial strain on the Rashba spin splittings. The Zeeman-type spin splitting and valley polarization at $K({K}^{\ensuremath{'}})$ point are well preserved and we observed a Rashba-type spin splitting around the $\mathrm{\ensuremath{\Gamma}}$ point for all the $MXY$ systems. We have also found that these spin splittings can be enhanced by an external electric field collinear with the local electric field derived by the polar bonds and by the compressive strain. The Rashba parameters change linearly with the external electric field, but nonlinearly with the biaxial strain. The compressive strain is found to enhance significantly the anisotropic Rashba spin splitting.

Simultaneously Improving Rashba-type and Zeeman Effects in Two-Dimensional Multiferroics

Two-dimensional Rashba semiconductors and inversion-asymmetric topological insulators in monolayer Janus MAA'ZxZ'(4-x) family

Ferromagnetic-antiferromagnetic coexisting ground state and exchange bias effects in MnBi4Te7 and MnBi6Te10

Evolution of the electronic structure of ultrathin MnBi2Te4 Films

Persistent surface states with diminishing gap in MnBi2Te4/Bi2Te3 superlattice antiferromagnetic topological insulator

Possibility of Combining Ferroelectricity and Rashba-like spin splitting in Monolayers of 1T-type Transition-Metal Dichalcogenides MX2

Manipulation Of The Large Rashba Spin Splitting In Polar Two-Dimensional Transition-Metal Dichalcogenides

Intrinsic and Anisotropic Rashba Spin Splitting in Janus Transition-Metal Dichalcogenide Monolayers

Signatures of nontrivial Rashba metal states in a transition metal dichalcogenides Josephson junction

Tunable Rashba Spin Splitting in Janus Transition-Metal Dichalcogenide Monolayers Via Charge Doping

Manipulation of the Large Rashba Spin Splitting in Polar Two-Dimensional Transition Metal Dichalcogenides

Tailoring Magnetic Exchange Interactions in Ferromagnet-Intercalated MnBi2Te4 Superlattices

Robust axion insulator and Chern insulator phases in a two-dimensional antiferromagnetic topological insulator

Multiple Topological Magnetism in van der Waals Heterostructure of MnTe 2 /ZrS 2

Controlling Rashba Spin Orbit Coupling in Polar Two-Dimensional Transition Metal Dichalcogenide

Approaching a Minimal Topological Electronic Structure in Antiferromagnetic Topological Insulator MnBi 2 Te 4 via Surface Modification

Coexistence of Superconductivity and Antiferromagnetism in Topological Magnet MnBi2Te4 Films

High- T c superconductor Fe(Se,Te) monolayer: an intrinsic, scalable and electrically tunable Majorana platform

Coexisting Ferromagnetic-antiferromagnetic Phase and Manipulation in Magnetic Topological Insulator MnBi4Te7

Two-dimensional MX Dirac materials and quantum spin Hall insulators with tunable electronic and topological properties

Concurrent Ferromagnetism and Superconductivity in Fe(Te,Se) van der Waals Josephson Junctions