Abstract:In the preparation of PSCs, NiOx is considered to be one very promising hole transport layers for its intrinsic p-type doping nature, deep-lying valence band, and high light transmittance. However, the thickness, uniformity, and composition of the NiOx film are not easy to accurately control by the solution spin-coating process. In this work, instead of the solution-processed NiOx, metal Ni is first deposited on the FTO/glass substrate by an e-beam evaporator and then converted to the NiOx by exposing it in the air with the help of annealing, which avoids the usage of a toxic solvent in the solution method. The deposition thickness and composition of the NiOx films could be well controlled. The results demonstrate that the Ni-oxidized NiOx HTL shows wonderful energy alignment, better charge extraction capability, and great efficiency in photoluminescence quenching when in contact with the perovskite film. By combining the two-step solution process method, high-performance PSC has been achieved based on the Ni-oxidized NiOx HTL, which is well above that based on the PEDOT:PSS and the solution-processed NiOx. Also, transient photocurrent (TPC) and transient photovoltage (TPV) measurements demonstrate that the device based on the Ni-oxidized NiOx HTL possesses a suppressed charge recombination and an outstanding ability of charge extraction. Furthermore, the Ni-oxidized NiOx-based devices exhibit better stability compared to the devices based on solution-processed NiOx and PEDOT:PSS HTL. All the results show that the Ni oxidation method is an efficient method to prepare the NiOx HTL in PSCs.

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High Efficiency Inverted Planar Perovskite Solar Cells with Solution-Processed NiOx Hole Contact.