Abstract:Random networks of single-walled carbon nanotubes (SWCNTs) were have been grown by chemical vapor deposition on silicon wafers and used for fabricating field-effect transistors (FETs) using symmetric Pd contacts and diodes using asymmetrical Pd and Sc contacts. For a short channel FET or diode with a channel length of about 1 μm or less, the device works in the direct transport regime, while for a longer channel device the transport mechanism changes to percolation. Detailed electronic and photovoltaic (PV) characterizations of these carbon nanotube (CNT) thin-film devices was carried out. While as-fabricated FETs exhibited typical p -type transfer characteristics, with a large current ON/OFF ratio of more than 10 4 when metallic CNTs were removed via a controlled breakdown, it was found that the threshold voltage for the devices was typically very large, of the order of about 10 V. This situation was greatly improved when the device was coated with a passivation layer of 12 nm HfO 2 , which effectively moved the threshold voltages of both FET and diode back to center around zero or turned these device to their OFF states when no bias was applied on the gate. PV measurements were then made on the short channel diodes under infrared laser illumination. It was shown that under an illumination power density of 1.5 kW/cm 2 , the device resulted in an open circuit voltage V OC = 0.21 V and a short circuit current I SC = 3.74 nA. Furthermore, we compared PV characteristics of CNT film diodes with different channel lengths, and found that the power transform efficiency decreased significantly when the device changed from the direct transport to the percolation regime.

Highly Efficient SWCNT/GaAs Van Der Waals Heterojunction Solar Cells Enhanced by Nafion Doping

Hybrid heterojunction and photoelectrochemistry solar cell based on silicon nanowires and double-walled carbon nanotubes.

Improved Photovoltaic Performance of GaAs/Carbon Nanotube Heterojunction Solar Cells with a Multifunctional Nafion/PEDOT:PSS Layer

Enhanced Solar Energy Conversion in Au-doped, Single-Wall Carbon Nanotube-Si Heterojunction Cells

Heterojunction Photovoltaic Devices Utilizing Single Wall Carbon Nanotube Thin Films and Silicon Substrates

Achieving High Efficiency Silicon-Carbon Nanotube Heterojunction Solar Cells by Acid Doping.

High Efficiency CNT-Si Heterojunction Solar Cells by Dry Gas Doping

Strong, Conductive Carbon Nanotube Fibers As Efficient Hole Collectors

Fabrication of single-walled carbon nanotube/Si heterojunction solar cell with high photovoltaic conversion efficiency and stability

Surpassing the Exciton Diffusion Limit in Single-Walled Carbon Nanotube Sensitized Solar Cells

Breakthrough Carbon Nanotube–Silicon Heterojunction Solar Cells

Doping-free fabrication of carbon nanotube thin-film diodes and their photovoltaic characteristics

Strong and Reversible Modulation of Carbon Nanotube-Silicon Heterojunction Solar Cells by an Interfacial Oxide Layer.

Vapor-Assisted Ex-Situ Doping of Carbon Nanotube toward Efficient and Stable Perovskite Solar Cells

Interface engineering for graphene nanowalls/silicon Schottky solar cells prepared by polymer-free transfer method

PEDOT:PSS-Nafion/n-Si Hybrid Heterojunction TOPCon Solar Cells: Experiment and Simulation

Light Harvesting and Enhanced Performance of Si Quantum Dot/Si Nanowire Heterojunction Solar Cells

High-efficiency CNT-Si Solar Cells Based on a Collaborative System Enabled by Oxide Penetration

Core-Shell Heterojunction of Silicon Nanowire Arrays and Carbon Quantum Dots for Photovoltaic Devices and Self-Driven Photodetectors

High‐Efficiency Graphene‐Oxide/Silicon Solar Cells with an Organic‐Passivated Interface

Solution-processed Bulk Heterojunction Solar Cells Based on Interpenetrating CdS Nanowires and Carbon Nanotubes