Abstract:Solar-blind photodetectors (SBPDs) are core essential components for many critical applications such as precision guidance, fire warning, and space communications. Ultra-wide bandgap semiconductor beta-Ga2O3 is considered to be an ideal material for the fabrication of SBPDs. However, synthetizing beta-Ga2O3 with high quality factor while simultaneously in situ modulation of electronic and optoelectronic properties to enhance performance has been challenging. Here, pulsed laser deposition (PLD) technology is used to synthesize high-quality beta-Ga2O3 thin films on a sapphire substrate. The oxygen vacancy engineered beta-Ga2O3 films can achieve in situ precise control of their surface morphology, optical parameters, and optoelectronic properties by simply adjusting the oxygen pressure. Meanwhile, the optimal thickness of the beta-Ga2O3 film for the developing high-performance SBPD is similar to 221 nm, determined by fitting and analyzing the optical parameters measured by the ellipsometry. Subsequently, the influence of oxygen pressure on the performance of beta-Ga2O3 SBPD is thoroughly explored, considering the optimization of electrode size and deposition time. When the oxygen pressure is set to 15 Pa, the beta-Ga2O3-based SBPD achieves highly competitive responsivity (R) and detectivity (D*) at 250 nm, with values of 1080 A center dot W-1 and 1.4 x 10(16) cm center dot W-1 center dot Hz(1/2), respectively. Additionally, the noise component of the beta-Ga2O3 SBPD is further studied to calibrated the traditional device performance results. This work introduces a simple and straightforward approach to in situ tuning of the optoelectronic properties of beta-Ga2O3, which is important for advancing beta-Ga2O3 film growth technology and fabricating high-performance photodetectors.

Surface Plasma Treatment Reduces Oxygen Vacancies Defects States to Control Photogenerated Carriers Transportation for Enhanced Self-Powered Deep UV Photoelectric Characteristics

Performance Improvement of Amorphous Ga2O3/P-Si Deep Ultraviolet Photodetector by Oxygen Plasma Treatment

Ultrasensitive and High-Speed Ga$_{\text{2}}$O$_{\text{3}}$ Solar-Blind Photodetection Based on Defect Engineering

Ultralow dark current and high specific detectivity of Ga2O3-based solar-blind photodetector arrays realized via post-annealing in oxygen plasma

High Responsivity and Detectivity Β-Ga 2O 3 Solar-Blind Photodetectors Optimized by Oxygen Vacancy Engineering

Investigation of Ga2O3-Based Deep Ultraviolet Photodetectors Using Plasma-Enhanced Atomic Layer Deposition System

High-performance -Ga<sub>2</sub>O<sub>3</sub> thickness dependent solar blind photodetector

Effects of UV-ozone treatment on the performance of deep-ultraviolet photodetectors based on ZnGa2O4 epilayers

Comprehensive Enhancement of ZnGa2O4-based Solar Blind Photodetector Performance by Suppressing Defects in Oxygen-Rich Atmosphere

Progress in State-of-the-art Technologies of Ga2O3 Devices

Enhancement of Electrical Characteristics of SnGaO Thin-Film Transistors Via Argon and Oxygen Plasma Treatment

Enhancing β-Ga2O3-film ultraviolet detectors via RF magnetron sputtering with seed layer insertion on c-plane sapphire substrate

A self-powered Ag/β-Ga2O3 photodetector with broadband response from 200 to 980 nm based on the photovoltaic and pyro-phototronic effects

Tunable Ga2O3solar-blind photosensing performance via thermal reorder engineering and energy-band modulation

Enhancing the Performance of ZnGa2O4 Metal-Semiconductor-metal Ultraviolet Solar-Blind Photodetectors by Surface Fluorine Plasma Sensitization

Balanced performance for β-Ga2O3 solar blind photodetectors: The role of oxygen vacancies

Self-trapped Holes, Oxygen Vacancies and Electrocatalytic Performance of Zn-doped Β-Ga2o3 Microspindles

Identification and Suppression of Majority Surface States in the Dry-Etched Β-Ga2o3

Boosting the Performance of Β‐ga2o3 Solar‐Blind Deep UV Photodetectors by Balancing the Photocurrent and Dark Current Via the IZO Interlayer

Oxygen-vacancy-dependent high-performance α-Ga2O3 nanorods photoelectrochemical deep UV photodetectors

Tunable Ga2O3 solar-blind photosensing performance via thermal reorder engineering and energy-band modulation