Abstract:A solution is sought for the buried interface issues within CsPbI2Br‐based perovskite solar cells. Addressing this, a multifunctional electron transporting layer (ETL) using a PbCl2‐modified ZnO nanocomposite is introduced. By tuning bandgap and energy levels, the ETL enhances energy alignment with CsPbI2Br. Integration of residual PbCl2 at the buried interface minimizes defects, ameliorating film quality. CsPbI2Br perovskite solar cells (PSCs) have garnered significant attention owing to their remarkable thermal stability and desirable bandgap. However, CsPbI2Br‐based devices still face critical challenges, particularly at the interfaces between the active layer and adjacent components. In this study, a multifunctional ZnO composition has developed as the electron transporting layer (ETL) for CsPbI2Br PSCs, enabling simultaneous efficient charge extraction and passivation of buried interface defects in CsPbI2Br. The nanocomposite, composed of PbCl2‐modified ZnO (PbCl2‐ZnO), facilitates the regulation of bandgap and conduction band to align the energy level of ETL and CsPbI2Br. Additionally, the residual PbCl2 at the buried interface of the perovskite incorporates into the perovskite lattice, reducing I defect and thus improving film quality. The improved energy level alignment at the ETL/CsPbI2Br interface and the suppressed I defect‐induced carrier nonradiative recombination result in a remarkable reduction in energy loss from 0.73 to 0.52 eV. Finally, the PbCl2‐ZnO hybrid nanocomposite ETL significantly enhances the efficiency of CsPbI2Br PSCs, increasing it from 14.15% to 17.46%, representing one of the highest reported power conversion efficiency (PCE) values for CsPbI2Br PSCs. These findings demonstrate the potential of PbCl2‐ZnO hybrid nanocomposite as an effective ETL for CsPbI2Br PSCs.

Fabrication of ZnO Dual Electron Transport Layer Via Atomic Layer Deposition for Highly Stable and Efficient CsPbBr3perovskite Nanocrystals Light-Emitting Diodes.

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Size Enlargement of CsPbI3 Perovskite Nanocrystals by Trioctylphosphine in the Synthesis for Highly Efficient Deep‐Red Light‐Emitting Diodes

Area-Scalable Zn2SnO4 Electron Transport Layer for Highly Efficient and Stable Perovskite Solar Modules

Improving the Performance and Stability of Perovskite Light-Emitting Diodes by a Polymeric Nanothick Interlayer-Assisted Grain Control Process

Enhanced Stability and Performance in Perovskite Nanocrystal Light‐Emitting Devices Using a ZnMgO Interfacial Layer

Room Temperature Processed Double Electron Transport Layers for Efficient Perovskite Solar Cells

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PbS Capped CsPbI3 Nanocrystals for Efficient and Stable Light-Emitting Devices Using P–i–n Structures

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Two-Step Hybrid Passivation Strategy for Ultrastable Photoluminescence Perovskite Nanocrystals

Ultrathin Light-Emitting Diodes with External Efficiency over 26% Based on Resurfaced Perovskite Nanocrystals

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Achieving 17.46% Efficiency CsPbI2Br Perovskite Solar Cells via Multifunction Lead Chloride‐Modified ZnO Electron Transporting Layer