Ultrafast Response Solar-Blind UV Sensor Based on ZnGa2O4 Nanowire Bridge Arrays

Yutong Wu,Kun Zhang,Guowei Li,Qingshan Wang,Xie Fu,Liang Wang,Jinling Luo,Shuanglong Feng,Zhiyong Tao,Yaxian Fan,Wenqiang Lu

DOI: https://doi.org/10.1016/j.physe.2022.115505

2023-01-01

Abstract:In optoelectronic devices and deep UV photodetectors, there is an urgent need for solar-blind photodetectors with a fast response time. Spinel ZnGa2O4 is a wide-bandgap metal-oxide direct-gap semiconductor (4.4–5.2 eV, UV band for 100–280 nm) with outstanding optical and electrical properties, making it the best choice for solar-blind photodetectors. In this work, the ZnGa2O4 lateral nanowire bridge arrays were speedily manufactured on an insulating SiO2/Si substrate with a simplified specific low-cost CVD process with Au arrays catalyst. A thin film of ZnGa2O4 nanowire bridge arrays was synthesized in 3 min, implying a high potential for the fast development of ZnGa2O4 nanowire bridge arrays and their application in the future solar-blind photodetectors. Furthermore, a solar-blind photodetector using MSM (Metal-Semiconductor-Metal) ZnGa2O4 bridge arrays with exceptional performance was developed here, with a rise time of similar to 0.067 s, an Idark of 0.041 nA, and a light-dark ratio 3.3 × 102. Meanwhile, the response time of the nanowire arrays photodetector was 10 times faster than that of the nanowire networks photodetector prepared by the same method. Our work provided inspiration for the manufacture of high-performance solar-blind photodetectors.