Abstract:Modern magnetic-memory technology requires all-electric control of perpendicular magnetization with low energy consumption. While spin–orbit torque (SOT) in heavy metal/ferromagnet (HM/FM) heterostructures<a href="#ref-CR1">1</a>,<a href="#ref-CR2">2</a>,<a href="#ref-CR3">3</a>,<a href="#ref-CR4">4</a>,<a href="/articles/s41565-020-00826-8#ref-CR5">5</a> holds promise for applications in magnetic random access memory, until today, it has been limited to the in-plane direction. Such in-plane torque can switch perpendicular magnetization only deterministically with the help of additional symmetry breaking, for example, through the application of an external magnetic field<a href="/articles/s41565-020-00826-8#ref-CR2">2</a>,<a href="/articles/s41565-020-00826-8#ref-CR4">4</a>, an interlayer/exchange coupling<a href="#ref-CR6">6</a>,<a href="#ref-CR7">7</a>,<a href="#ref-CR8">8</a>,<a href="/articles/s41565-020-00826-8#ref-CR9">9</a> or an asymmetric design<a href="#ref-CR10">10</a>,<a href="#ref-CR11">11</a>,<a href="#ref-CR12">12</a>,<a href="#ref-CR13">13</a>,<a href="/articles/s41565-020-00826-8#ref-CR14">14</a>. Instead, an out-of-plane SOT<a href="/articles/s41565-020-00826-8#ref-CR15">15</a> could directly switch perpendicular magnetization. Here we observe an out-of-plane SOT in an HM/FM bilayer of L11-ordered CuPt/CoPt and demonstrate field-free switching of the perpendicular magnetization of the CoPt layer. The low-symmetry point group (3m1) at the CuPt/CoPt interface gives rise to this spin torque, hereinafter referred to as 3m torque, which strongly depends on the relative orientation of the current flow and the crystal symmetry. We observe a three-fold angular dependence in both the field-free switching and the current-induced out-of-plane effective field. Because of the intrinsic nature of the 3m torque, the field-free switching in CuPt/CoPt shows good endurance in cycling experiments. Experiments involving a wide variety of SOT bilayers with low-symmetry point groups<a href="/articles/s41565-020-00826-8#ref-CR16">16</a>,<a href="/articles/s41565-020-00826-8#ref-CR17">17</a> at the interface may reveal further unconventional spin torques in the future.

In-situ Field Induced Enhancement of Damping-Like Field and Field-Free Switching in Perpendicularly Coupled Pt/Co and CoFeB Bilayers Sandwiched by an Ultrathin PtMn/Ta Layer

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Field-free spin-orbit torque switching assisted by in-plane unconventional spin torque in ultrathin [Pt/Co]N

Field-free spin-orbit torque switching of composite perpendicular CoFeB/Gd/CoFeB layers utilized for three-terminal magnetic tunnel junctions

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Field-free Spin-Orbit Torque Perpendicular Magnetization Switching Induced by Metallic Multilayers

Field-Free Magnetization Switching Induced by Bulk Spin-Orbit Torque in a (111)-Oriented CoPt Single Layer with In-Plane Remanent Magnetization

Ultra-efficient spin-orbit torque induced magnetic switching in W/CoFeB/MgO structures.

Field-free magnetization switching through modulation of zero-field spin–orbit torque efficacy

Field-free magnetization switching through large out-of-plane spin–orbit torque in the ferromagnetic CoPt single layers

Field-Free SOT-Switching Based on a Vertical Composition Gradient of Ferrimagnetic Alloys

Full-scale field-free spin-orbit switching of the CoPt layer grown on vicinal substrates

Field free magnetization switching in perpendicularly magnetized Pt/Co/FeNi/Ta structure by spin orbit torque

Field-free Spin-Orbit Torque-Induced Perpendicular Magnetization Switching in YIG/Ta/CoTb/Pt

Symmetry-dependent field-free switching of perpendicular magnetization

Field-free Switching of Perpendicular Magnetization in a Noncollinear Antiferromagnetic Mn3Sn/[Pt/Co]4 Heterostructure

Modulation of Field-Like Spin Orbit Torque in Heavy Metal/ferromagnet Heterostructures

Field-free switching of perpendicular magnetization by cooperation of planar Hall and orbital Hall effects

Efficient spin–orbit torque switching in perpendicularly magnetized CoFeB facilitated by Fe2O3 underlayer

High-Efficiency Field-Free Spin-Orbit Switching Based on PtW Alloy Layer

Field-free Spin-Orbit Torque-Induced Switching of Perpendicular Magnetization in a Ferrimagnetic Layer with a Vertical Composition Gradient.