Abstract:The carriers' mobility in 5d transition metal oxides‐based two‐dimensional electron systems is significantly hampered by the inevitable presence of defects. In order to overcome this challenge, ionic‐liquid gating at room temperature is applied to affect the oxygen vacancies and efficiently reduce any disorder at the interface. In this way, very high mobility of the amorphous LaAlO3/KTaO3 interface is demonstrated. Due to the coexistence of many emergent phenomena, including 2D superconductivity and a large Rashba spin‐orbit coupling, 5d transition metal oxides‐based two‐dimensional electron systems (2DESs) have been prospected as one of the potential intrants for modern electronics. However, despite the lighter electron mass, the mobility of carriers, a key requisite for high‐performance devices, in 5d‐oxides devices remains far behind their 3d‐oxides analogs. The carriers' mobility in these oxides is significantly hampered by the inevitable presence of defects. Here, very high mobility (≈22 650 cm2 V−1 s−1) of 5d‐2DES confined at the LaAlO3/KTaO3 interface is reported. The high mobility, which is beyond the values observed in SrTiO3 2DESs in the same carrier‐density range, is achieved using the ionic‐liquid gating at room temperature. The authors postulate that the ionic‐liquid gating affects the oxygen vacancies and efficiently reduces any disorder at the interface. Investigating density and mobility in a broad range of back‐gate voltage, the authors reveal that the mobility follows the power‐law μ ∝ n1.2, indicating the very high quality of ionic‐liquid‐gated LaAlO3/KTaO3 devices, consistent with the postulate. Furthermore, the analysis of the quantum oscillations confirms that the high‐mobility electrons occupy the electronic sub‐bands emerging from the Ta:5d orbitals of KTaO3.

Controlling Transport Properties of 2D Electron System Hosted by SrTiO3‐Based Bilayers

Capping-layer-mediated Lattice Mismatch and Redox Reaction in SrTiO3-based Bilayers

Unravelling Oxygen-Vacancy-induced Electron Transfer at SrTiO3-based Heterointerfaces by Transport Measurement During Growth

Thickness Control of the Spin-Polarized Two-Dimensional Electron Gas in LaAlO3/BaTiO3 Superlattices

Enhancing electron mobility at the LaAlO₃ /SrTiO₃ interface by surface control.

Thickness Control of the Spin-Polarized Two-Dimensional Electron Gas in LaAlO 3 /BaTiO 3 Superlattices

Enhancing Electron Mobility at the LaAlO3/SrTiO3 Interface by Surface Control

Tuning up or down the critical thickness in LaAlO3/SrTiO3 through in situ deposition of metal overlayers

Tuning the Carrier Density of LaAlO3/SrTiO3 Interfaces by Capping La1−xSrxMnO3

Enhanced tunability of two-dimensional electron gas on SrTiO3 through heterostructuring

Competing conduction mechanisms for two-dimensional electron gas at LaTiO3/SrTiO3 heterointerfaces

Tuning the Electrons at the Laalo3/Srtio3 Interface: from Growth to Beyond Growth

Coexistence of high electron-mobility, unpaired spins, and superconductivity at high carrier density SrTiO$_3$-based interfaces

Large Enhancement of 2D Electron Gases Mobility Induced by Interfacial Localized Electron Screening Effect

From LaAlO3/SrTiO3 to LaAlO3/KNbO3: Improving the Transport Properties of Two-Dimensional Electronic Gas in Created +1/+1 Interfaces

Ionic Modulation at the LaAlO3/KTaO3 Interface for Extreme High‐Mobility Two‐Dimensional Electron Gas

Tuning Carrier Density at Complex Oxide Interface with Metallic Overlayer

Stoichiometric control of electron mobility and 2D superconductivity at LaAlO 3 -SrTiO 3 interfaces

Two-Dimensional Electron Gases at LaAlO3/SrTiO3 Nanostructured Heterointerfaces with a Buffering Layer for Oxide-Based Electronics

Giant Tunability of the Two-Dimensional Electron Gas at the Interface of Γ-Al2o3/srtio3

First-principles characterization of the critical thickness for forming metallic states in strained LaAlO₃/SrTiO₃(001) heterostructure