High-sensitivity CdTe Phototransistors with the Response Spectrum Extended to 1.65 Μm

Jiyue Zhang,Hechun Cao,Wei Bai,Dongyang Zhao,Yan Chen,Xudong Wang,Jing Yang,Yuanyuan Zhang,Ruijuan Qi,Rong Huang,Xiaodong Tang,Jianlu Wang,Junhao Chu
DOI: https://doi.org/10.1039/d2ta04119g
IF: 11.9
2022-01-01
Journal of Materials Chemistry A
Abstract:We reported the spectral extension to 1.65 μm far beyond the λcutoff of 870 nm. Ultrahigh R and D* above 3.84 A W−1 and 3.73 × 1011 Jones, respectively, are realized, illustrating strong competitiveness with Si, Ge and InGaAs commercial detectors.
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