Abstract:Photothermoelectric (PTE) detectors combine photothermal and thermoelectric conversion, surmounting material band gap restrictions and limitations related to matching light wavelengths, have been widely used in telecommunication band detection. Two-dimensional (2D) materials with gate-tunable Seebeck coefficient can induce the generation of photothermal currents under illumination by the asymmetric Seebeck coefficient, making them promising candidate for PTE detectors in the telecommunication band. In this work, we report that a newly explored van der Waals (vdW) layered material, SnP2Se6, possessing excellent field regulation capabilities and behaviors as an ideal candidate for PTE detector implementation. With the assistance of temperature-dependent Raman characterization, the suspended atomic thin SnP2Se6 nanosheets reveal thickness-dependent thermal conductivity of 1.4-5.7 W m(-1) K-1 at room temperature. The 2D SnP2Se6 demonstrates high Seebeck coefficient (S) and power factor (PF), which are estimated to be -506 mu V K-1 and 207 mu W m(-1) K-2, respectively. By effectively modulating the SnP2Se6 localized carrier concentration, which in turn leads to inhomogeneous Seebeck coefficients, the designed dual-gate PTE detector with 2D SnP2Se6 channel demonstrates wide spectral photoresponse in telecommunication bands, yielding high responsivity (R = 1.2 mA W-1) and detectivity (D* = 6 x 10(9) Jones) under 1550 nm light illumination. Our findings provide a new material platform and device configuration for the telecommunication band detection.

Anisotropic ultrasensitive PdTe 2 -based phototransistor for room-temperature long-wavelength detection

Anisotropic Ultrasensitive PdTe2-based Phototransistor for Room-Temperature Long-Wavelength Detection

High‐Performance, Room Temperature, Ultra‐Broadband Photodetectors Based on Air‐Stable PdSe2

High-Speed Compact Plasmonic-PdSe<sub>2</sub> Waveguide-Integrated Photodetector

Palladium Diselenide Long-Wavelength Infrared Photodetector with High Sensitivity and Stability

Highly Efficient, Ultrabroad PdSe 2 Phototransistors from Visible to Terahertz Driven by Mutiphysical Mechanism

Waveguide-Integrated PdSe2 Photodetector over a Broad Infrared Wavelength Range

Anisotropic Broadband Photoresponse of Layered Type‐II Weyl Semimetal MoTe2

Highly Efficient, Ultrabroad PdSe2 Phototransistors from Visible to Terahertz Driven by Mutiphysical Mechanism

Anisotropic Te/PdSe2 Van Der Waals Heterojunction for Self‐Powered Broadband and Polarization‐Sensitive Photodetection

Sm, Pt asymmetric n- and p-type contacts in WSe2 phototransistor for high-performance broadband photodetection

A Room-Temperature Near-Infrared Photodetector Based on a MoS2/CdTe P-N Heterojunction with a Broadband Response Up to 1700 Nm

A high-performance flexible SnS photothermoelectric photodetector for temperature sensing function

Fabrication of 2D PdSe2/3D CdTe Mixed-Dimensional van der Waals Heterojunction for Broadband Infrared Detection

Electrically adjusted deep-ultraviolet/near-infrared single-band/dual-band imaging photodetectors based on Cs<sub>3</sub>Cu<sub>2</sub>I<sub>5</sub>/PdTe<sub>2</sub>/Ge multiheterostructures

Design of 2D Layered PtSe2 Heterojunction for the High-Performance, Room-Temperature, Broadband, Infrared Photodetector

Two‐dimensional SnP2Se6 with Gate‐tunable Seebeck Coefficient for Telecommunication Band Photothermoelectric Detection

Enhanced Performance of Wideband Room Temperature Photodetector Based on Cd3As2 Thin Film/Pentacene Heterojunction

Highly Efficient 1D P-Te/2d N-Bi 2 Te 3 Heterojunction Self-Driven Broadband Photodetector

Room Temperature Broadband Bi2Te3/PbS Colloidal Quantum Dots Infrared Photodetectors

Ultrahigh Sensitive Phototransistor Based on MoSe2/Ge Mixed-Dimensional Heterojunction for Visible to Short-Wave Infrared Broadband Photodetection