Device Modeling and Simulation of Ferroelectric Tunnel Junction for Computing-in-Memory Application

Yuyao Lu,Linpu Zhai,Bin Gao,Jianshi Tang,Feng Xu,Yue Xi,Qingtian Zhang,Zhigang Zhang,He Qian,Huaqiang Wu
DOI: https://doi.org/10.1109/cstic55103.2022.9856788
2022-01-01
Abstract:For computing-in-memory applications implemented by ferroelectric tunnel junction (FTJ), a multi-pulse FTJ switching model is required. Here, based on the single-pulse nucleation-limited switching (NLS) model, a multi-pulse model capable of calculating the change of ferroelectric polarization under a series of arbitrary waveform pulses at different frequencies is proposed, which shows good agreement with literature-reported experimental results. In addition, the multi-pulse model was adopted in the simulation of an FTJ-based neural network, where it was found that the programming scheme with increasing pulse amplitude could achieve higher recognition accuracy and better FTJ conductance fluctuation tolerance than those with identical pulse or increasing pulse width. This work provides a useful model for further optimization and application of FTJ in neuromorphic computing.
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