Abstract:The achievement of high-efficiency AlGaN-based deep ultraviolet (DUV) emitters is greatly limited by the poor crystalline quality and negligible carrier localization effect of the Al-rich AlGaN quantum structures. Herein, we propose solving this long-standing issue via surface engineering. By changing the misorientations of sapphire substrates, Al(Ga)N epilayers obtained different step heights and shapes. Accordingly, surface-mediated dislocation climbing and surface adatom incorporation behaviors can be well regulated. Profiting from macrostep-mediated dislocation climbing behavior, dislocation inclination and interaction become more frequent. Thus, for the 1 mu m-thick AlN epilayers grown on C/A-4(degrees) and C/M-4(degrees) sapphire substrates, only a few mixed-type dislocations are found. However, this process also continuously induces tensile stress. To alleviate tensile stress and pursue efficient DUV emission, we constructed nominal quantum wells on 400 nm ultrathin step-bunched AlN epilayers. Interestingly, the different incorporation behaviors of Al and Ga adatoms induce the formation of quantum wells at the macrostep terraces and quantum wires at the macrostep edges, respectively. The excellent crystalline quality of the AlN/sapphire templates and the dominant luminescence of the high-density self-organized quantum wire array lead to a high internal quantum efficiency of 70%. This work paves the way for achieving high-efficiency devices on a low-cost ultrathin platform.

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Fabrication and applications of wafer-scale nanoporous GaN near-infrared distributed Bragg reflectors

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High-Quality Crystal Growth and Characteristics of AlGaN-Based Solar-Blind Distributed Bragg Reflectors with a Tri-layer Period Structure

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Computational design and optimization of nanostructured AlN deep-UV grating reflectors

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Design of a tandem distributed Bragg reflectors specialized for enhancing the efficiency of GaN-based ultraviolet light-emitting diodes

MOCVD Growth of AlGaN/GaN Distributed Bragg Reflectors

Structural Characterization of AlGaN/AlN Bragg Reflector Grown by Metalorganic Chemical Vapor Deposition

Breaking the Transverse Magnetic-Polarized Light Extraction Bottleneck of Ultraviolet-C Light-Emitting Diodes Using Nanopatterned Substrates and an Inclined Reflector

Design and Characterization of AlGaN/GaN Distributed Bragg Reflectors

Efficient Deep Ultraviolet Emission from Self-Organized AlGaN Quantum Wire Array Grown on Ultrathin Step-bunched AlN Templates

Preparation of large-area, high quality, free-standing GaN distributed Bragg reflectors

Solar-Blind Ultraviolet Alinn/Algan Distributed Bragg Reflectors

Advantages of AlGaN-based Deep-Ultraviolet Light-Emitting Diodes with an Al-composition Graded Quantum Barrier.

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