The taxonomic and ecological status of the environmentally restricted spongillid species of North America. IV. Spongilla heterosclerifera Smith 1918

F. Harrison,M. B. Harrison

DOI: https://doi.org/10.1007/BF00037504

IF: 2.822

Hydrobiologia

Abstract:

What problem does this paper attempt to address?

AlGaN-based UV-C Distributed Bragg Reflector with a Λ-Cavity Designed for an External Cavity Structure Electron-Beam-pumped VCSEL

Y. R. Chen,Z. W. Zhang,G. Q. Miao,H. Jiang,Z. M. Li,H. Song

DOI: https://doi.org/10.1016/j.jallcom.2019.153415

IF: 6.2

2020-01-01

Journal of Alloys and Compounds

Abstract:The external cavity structure electron-beam-pumped (EB-pumped) vertical cavity surface emitting laser (VCSEL) has an important demand for the distributed Bragg reflector (DBR) with an emission window at the working wavelength called lambda-cavity. Herein, AlGaN-based UV-C band DBRs with lambda-cavities around 280 nm are designed and investigated in detail, which have almost no been reported so far. The DBRs based on alternate stacked Al0.47Ga0.53N/AlN bilayers are in-situ grown by low-pressure metal-organic chemical vapor deposition (LP-MOCVD). Through a comprehensive protocol of structure optimization by theoretical simulation, epitaxial growth and in-depth characterization and analysis, a high-performance UV-C band DBR with lambda-cavity around 280 nm is successfully fabricated. The DBR presents a reflectivity as high as 81.3% at the lambda-cavity, a maximum reflectivity of 89.8% at 282 nm and a stopband with a full-width at half-maximum (FWHM) of 24.7 nm, laying a foundation for developing the external cavity structure EB-pumped AlGaN-based UV-C VCSELs emerging as a promising alternative to the electrically pumped AlGaN-based UV-C lasers. (C) 2019 Elsevier B.V. All rights reserved.
Ultraviolet-B Resonant-Cavity Light-Emitting Diodes with Tunnel Junctions and Dielectric Mirrors

Estrella Torres,Joachim Ciers,Michael A. Bergmann,Jakob Höpfner,Sarina Graupeter,Massimo Grigoletto,Martin Guttmann,Tim Kolbe,Tim Wernicke,Michael Kneissl,Åsa Haglund

DOI: https://doi.org/10.1021/acsphotonics.4c00312

IF: 7

2024-08-27

ACS Photonics

Abstract:We demonstrate the first electrically injected AlGaN-based ultraviolet-B resonant-cavity light-emitting diode (RCLED). The devices feature dielectric SiO(2)/HfO(2) distributed Bragg reflectors enabled by tunnel junctions (TJs) for lateral current spreading. A highly doped n^(++)-AlGaN/n^(++)-GaN/p^(++)-AlGaN TJ and a top n-AlGaN current spreading layer are used as transparent contacts, resulting in a good current spreading up to an active region mesa diameter of 120 μm. To access the N-face side...

physics, condensed matter,optics, applied,materials science, multidisciplinary,nanoscience & nanotechnology
High-Quality Crystal Growth and Characteristics of AlGaN-Based Solar-Blind Distributed Bragg Reflectors with a Tri-layer Period Structure

Jianjun Chang,Dunjun Chen,Lianhong Yang,Yanli Liu,Kexiu Dong,Hai Lu,Rong Zhang,Youdou Zheng

DOI: https://doi.org/10.1038/srep29571

IF: 4.6

2016-01-01

Scientific Reports

Abstract:To realize AlGaN-based solar-blind ultraviolet distributed Bragg reflectors (DBRs), a novel tri-layer AlGaN/AlInN/AlInGaN periodical structure that differs from the traditional periodically alternating layers of high- and low-refractive-index materials was proposed and grown on an Al 0.5 Ga 0.5 N template via metal-organic chemical vapour deposition. Because of the intentional design of the AlInGaN strain transition layer, a state-of-the-art DBR structure with atomic-level-flatness interfaces was achieved using an AlGaN template. The fabricated DBR exhibits a peak reflectivity of 86% at the centre wavelength of 274 nm and a stopband with a full-width at half-maximum of 16 nm.
Properties of an AlGaN/AlN distributed-Bragg-reflector structure

Li-Li Zhang,Zhan-Hui Liu,Xiao-Gu Huang,Qing-Fang Li,Rong Zhang,Zi-Li Xie,Xiang-Qian Xiu

DOI: https://doi.org/10.3938/jkps.65.1101

2014-01-01

Journal of the Korean Physical Society

Abstract:An AlGaN/AlN distributed-Bragg-reflector (DBR) structure with a high Al content was grown by using plasma-assisted molecular beam epitaxy (PA-MBE). The properties of the sample were characterized by using the transmission electron microscopy, high-resolution X-ray diffraction, atomic force microscopy, and reflectivity spectrum measurements. The reciprocal space mapping analysis indicated that the strain in the AlGaN layers was partially relaxed. The morphology of the DBR exhibited a surface covered by grains (average size of about 130 nm), and the surface roughness was about 2 nm. The spectral measurements showed that the DBR structure presented a peak reflectivity of 68.8% at the center wavelength of 247 nm, which indicated that this DBR structure could work in the deep solar-blind UV region with acceptable reflectivity. However, the optical properties of the DBR structure were deteriorated by the fluctuation of the Al composition, non-uniformity of the layer thickness, the blurry, rough interface in the DBR structure, and so on.
Breaking the Transverse Magnetic-Polarized Light Extraction Bottleneck of Ultraviolet-C Light-Emitting Diodes Using Nanopatterned Substrates and an Inclined Reflector

Wei Luo,Sharif Md. Sadaf,Tashfiq Ahmed,Houjin Wang,Yongde Li,Ye Yuan,Weiyun Wang,Shangfeng Liu,Tai Li,Qi Wang,Junjie Kang,Xinqiang Wang,Md Zunaid Baten,Md Omar Faruque,Md Arif Hossain

DOI: https://doi.org/10.1021/acsphotonics.2c01198

IF: 7

2022-08-31

ACS Photonics

Abstract:AlGaN-based light-emitting diodes (LEDs) operating in the deep-ultraviolet (UV-C) spectral range (210–280 nm) exhibit extremely low external quantum efficiency, primarily due to the presence of large threading dislocations and extremely low transverse magnetic (TM) light extraction efficiency. Here, we have demonstrated that such critical issues can be potentially addressed by using AlGaN quantum-well heterostructures grown on a hexagonal nanopatterned sapphire substrate (NPSS) and a flip-chip-bonded inclined Al mirror. Our finite-difference time domain-based numerical analysis confirms that the maximum achievable efficiency is limited by the poor light extraction efficiency due to the extremely low TM-polarized emission. In our experiment, with the usage of a meticulously designed hexagonal NPSS and an inclined Al side wall mirror (>90% reflective in the UV-C wavelength), the AlGaN quantum-well UV-C LEDs showed nearly 20% improvement in the light output power and efficiency compared to the conventional flat flip-chip LEDs. The UV-C LEDs operating at ∼275 nm exhibit a maximum output power of ∼25 mW at 150 mA, a peak external quantum efficiency of ∼4.7%, and a wall plug efficiency of ∼3.25% at 15 mA under continuous wave (CW) conditions. The presented approach opens up new opportunities to increase the extraction of UV light in the challenging spectral range by using properly designed patterned substrates and an engineered Al reflector.

physics, condensed matter,optics, applied,materials science, multidisciplinary,nanoscience & nanotechnology
GaAs/AlAs DBR optimized growth by GSMBE and its characterization

Zhengsheng Xie,Huizhen Wu,YanFeng Lao,Cheng Liu,Meng Cao

DOI: https://doi.org/10.3321/j.issn:1002-185x.2007.04.006

2007-01-01

Rare Metal Materials and Engineering

Abstract:GaAs/AlAs DBR (distributed Bragg reflector) was optimized grown by gas source molecular beam epitaxy (GSMBE). Its growth quality was investigated by using X-ray Diffraction (XRD) rock curve, mapping with three axes and two dimensions, and reflectivity, spectra. As demonstrated, when growing the GaAs/AlAs DBR by GSMBE, it is better for the material and interface quality with 5 seconds interval than that without it. The quality of 10 pairs DBR is better than that of 30 pairs. It is indicated that the more the pairs of DBR has, the bigger the fluctuation of the period thickness would be, and the worse the material quality would be. GaAs/AlAs DBR of 30 pairs optimized grown by GSMBE has the reflectivity with larger than 99%, the centre wavelength is 1316 nm, and its quality. is in consonance with the designed structure. So it could be used as the reflective cavity of 1.3 mu m vertical cavity surface emitting lasers (VCSEL) which has the direct-bonding structure.
N-AlGaN Free Deep-Ultraviolet Light-Emitting Diode with Transverse Electron Injection

Xingfa Gao,Jie Yang,Jiaheng He,Bingyue Cui,Lian Zhang,Zhe Liu,Yujie Ai,Defeng Lin,Mingtong Wu,Yun Zhang

DOI: https://doi.org/10.1021/acsphotonics.2c01558

IF: 7

2023-02-14

ACS Photonics

Abstract:For the first time, the n-AlGaN free deep-ultraviolet light-emitting diode (DUV-LED) with transverse electron injection by selective area regrowth (SAG) n+-GaN is demonstrated. The multiple quantum wells (MQWs) and upper layers of the transverse structure LEDs that deposited directly on the AlN template exhibit lower threading dislocation density and better surface morphology compared to conventional structure LEDs with thick n-AlGaN layer. The internal quantum efficiency of the transverse structure LED estimated by temperature-dependent photoluminescence is 95%, which is almost twice higher than that of the conventional structure LED (48%). The electroluminescence intensity of transverse structure LEDs is more than twice that of the conventional structure LEDs. Furthermore, the high crystal quality of MQWs enables transverse structure LEDs to emit shorter peak wavelengths (251–254 nm) and narrower full width at half maximums (10.1–10.7 nm). This study demonstrates that by adopting SAG n+-GaN as an electron injection layer, the n-AlGaN free transverse structure LEDs can be realized, enabling a substantial improvement in DUV-LEDs that are generally based on poor crystal quality n-AlGaN.

physics, condensed matter,optics, applied,materials science, multidisciplinary,nanoscience & nanotechnology
Vertical InGaN Light-Emitting Diode with Hybrid Distributed Bragg Reflectors

Guo-Yi Shiu,Ying Ke,Kuei-Ting Chen,Cheng-Jie Wang,Yu-Cheng Kao,Hsiang Chen,Jung Han,Chia-Feng Lin

DOI: https://doi.org/10.1021/acsomega.3c10055

IF: 4.1

2024-07-02

ACS Omega

Abstract:A vertical-type InGaN light-emitting diode with a resonant cavity was demonstrated with a 9 μm aperture size and a short cavity formed by hybrid distributed Bragg reflectors (DBRs). The approach involved designing epitaxial structures and utilizing an electrochemical etching process to convert heavily doped n-type gallium nitride (n+-GaN) layers into porous GaN layers as a porous-GaN DBR structure. Thirteen pairs of the conductive porous-GaN:Si/GaN:Si DBR structure provided a vertical current path in a vertical-type light-emitting diodes (LED) structure. The LED epitaxial layers were separated from sapphire for membrane-type LED structures through a laser lift-off process. During the free-standing membrane fabrication process, the dielectric DBR deposited on ITO/p-GaN:Mg layers was inverted from top to bottom, thereby establishing the concept of higher reflectivity for the bottom DBR compared to the porous-GaN DBR. The physical cavity length was reduced from about 2.3 μm for the LED membrane to 0.74 μm for the membrane-type LED with the embedded porous-GaN DBR structure. The divergent angles and line width of EL emission light were reduced from 124°/31.7 nm to 44°/3.3 nm due to the resonant cavity effect. The membrane-type LED structures with hybrid DBRs consisted of small divergent angles, narrow line width, and vertical current injection properties that have potential for directional emission light sources and vertical-cavity surface-emitting diode laser applications.
Advantages of AlGaN-based Deep-Ultraviolet Light-Emitting Diodes with an Al-composition Graded Quantum Barrier.

Huabin Yu,Zhongjie Ren,Haochen Zhang,Jiangnan Dai,Changqing Chen,Shibing Long,Haiding Sun

DOI: https://doi.org/10.1364/oe.27.0a1544

IF: 3.8

2019-01-01

Optics Express

Abstract:AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) still suffer from poor quantum efficiency and low optical power. In this work, we proposed a DUV LED structure that includes five unique AlxGa1-xN quantum barriers (QBs); Each QB has a linear-increment of Al composition by 0.03 along the growth direction, unlike those commonly used flat QBs in conventional LEDs. As a result, the electron and hole concentration in the active region was considerably increased, attributing to the success of the electron blocking effect and enhanced hole injection efficiency. Importantly, the optical power was remarkably improved by 65.83% at the injection current of 60 mA. After in-depth device optimization, we found that a relatively thinner graded QB layer could further boost the LED performance because of the increased carrier concentrations and enhanced electron and hole wave function overlap in the QW, triggering a much higher radiative recombination efficiency. Hence, the proposed graded QBs, which have a continuous increment of Al composition along the growth direction, provide us with an effective solution to boost light output power in the pursuit of high-performance DUV emitters.
Design of a tandem distributed Bragg reflectors specialized for enhancing the efficiency of GaN-based ultraviolet light-emitting diodes

Yue Yang,Qingbin Ji,Hua Zong,Tongxing Yan,Junchao Li,Tiantian Wei,Xiaodong Hu

DOI: https://doi.org/10.1016/j.optcom.2016.04.047

IF: 2.4

2016-01-01

Optics Communications

Abstract:We design a type of “tandem distributed Bragg reflector (DBR)” that shows advantages over normal DBR in ultraviolet region. We apply a tandem DBR centered at 390nm to a resonant cavity light emitting diodes model, consequently enhancing the extraction efficiency without detuning the cavity while narrowing the spectral width of the emitted light. The extraction efficiency into a numerical aperture exhibits a 36% increase compared to that of the normal structure. We further demonstrate the potential that the tandem DBRs (centered at 343nm and 246nm respectively) have for enhancing the efficiency in GaN-based deep UV device.
The Person and the Partner: Individual Differences Moderate the Relationship Between Partner Feedback and Condom Use

T. MacDonald,C. McKenna,Leigh C Mouck

DOI: https://doi.org/10.1007/s10461-015-1153-4

AIDS and Behavior

Abstract:
Preparation and Increased Optical Properties of Large-Area AlInGaN LEDs with Mesoporous AlGaN-Distributed Bragg Reflectors

Dezhong Cao,Kunxiao Sun,Yan Xu,Zhengquan Guo,He Wang,Xiaodong Yan,Dingze Lu,Ningning Feng,Qingchun Kong,Lianbi Li,Caijuan Xia,Xiaohua Ma

DOI: https://doi.org/10.1021/acs.cgd.3c00593

IF: 4.01

2023-08-08

Crystal Growth & Design

Abstract:2 in. mesoporous AlGaN (MP-AlGaN) distributed Bragg reflectors (DBRs) were obtained via electrochemical etching in 0.25 M oxalic acid solution and then were used as the substrate for growth of the large-area and highly reflective AlInGaN light-emitting diodes (LEDs) via the metal–organic chemical vapor deposition (MOCVD) technology. Compared to reference AlInGaN LEDs without DBRs, the wafer-scale AlInGaN LED structure with MP-AlGaN DBRs exhibit a nearly sevenfold increased luminescence intensity ascribed to the light reflection effect of MP-AlGaN DBRs and increased internal quantum efficiency of the multiple quantum wells (MQWs) layer. The blue shift of the PL peak is due to stress relaxation in the AlInGaN MQWs layer. Moreover, AlInGaN LEDs with MP-AlGaN DBRs present an increased luminescence lifetime compared with that of reference AlInGaN LEDs, which confirms the improved crystalline quality of the AlInGaN MQWs layer.

chemistry, multidisciplinary,materials science,crystallography
Deep-ultraviolet LEDs with an Al-graded p-AlGaN layer exhibiting high wall-plug efficiency and high modulation bandwidth simultaneously

Bingyue Cui,Jie Yang,Xingfa Gao,Jiaheng He,Zhe Liu,Zhe Cheng,Yun Zhang

DOI: https://doi.org/10.1088/1361-6641/ad238b

IF: 2.048

2024-01-30

Semiconductor Science and Technology

Abstract:This work demonstrated a DUV LED with an Al-graded p-AlGaN contact layer above the electron blocking layer (EBL) to alleviate p-type contact resistance, the asymmetry of carriers transport, and the polarization effect. The fitting results from the ABC+f(n) model revealed that the LED has a higher radiative recombination coefficient than the conventional structures ever reported, which contributes to a lower carrier lifetime. The light output power (LOP) of the LED at 350 mA is 44.71 mW, the peak external quantum efficiency (EQE) at 22.5 mA is 5.12%, the wall-plug efficiency (WPE) at 9 mA is 4.40%. The 3-dB E-O modulation bandwidth of the graded p-AlGaN contact layer LED is 390 MHz after impedance matching. In short, this study provides an in-depth analysis of the physical mechanism of the enhanced EQE and decreased carrier lifetime of DUV LEDs with Al-graded AlGaN as a p-type contact layer.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter
Highly efficient AlGaN-based deep-ultraviolet light-emitting diodes: from bandgap engineering to device craft

Xu Liu,Zhenxing Lv,Zhefu Liao,Yuechang Sun,Ziqi Zhang,Ke Sun,Qianxi Zhou,Bin Tang,Hansong Geng,Shengli Qi,Shengjun Zhou

DOI: https://doi.org/10.1038/s41378-024-00737-x

2024-08-13

Abstract:AlGaN-based light-emitting diodes (LEDs) operating in the deep-ultraviolet (DUV) spectral range (210-280 nm) have demonstrated potential applications in physical sterilization. However, the poor external quantum efficiency (EQE) hinders further advances in the emission performance of AlGaN-based DUV LEDs. Here, we demonstrate the performance of 270-nm AlGaN-based DUV LEDs beyond the state-of-the-art by exploiting the innovative combination of bandgap engineering and device craft. By adopting tailored multiple quantum wells (MQWs), a reflective Al reflector, a low-optical-loss tunneling junction (TJ) and a dielectric SiO2 insertion structure (IS-SiO2), outstanding light output powers (LOPs) of 140.1 mW are achieved in our DUV LEDs at 850 mA. The EQEs of our DUV LEDs are 4.5 times greater than those of their conventional counterparts. This comprehensive approach overcomes the major difficulties commonly faced in the pursuit of high-performance AlGaN-based DUV LEDs, such as strong quantum-confined Stark effect (QCSE), severe optical absorption in the p-electrode/ohmic contact layer and poor transverse magnetic (TM)-polarized light extraction. Furthermore, the on-wafer electroluminescence characterization validated the scalability of our DUV LEDs to larger production scales. Our work is promising for the development of highly efficient AlGaN-based DUV LEDs.
Review on the Progress of AlGaN-based Ultraviolet Light-Emitting Diodes

Yuxuan Chen,Jianwei Ben,Fujun Xu,Jinchai Li,Yang Chen,Xiaojuan Sun,Dabing Li

DOI: https://doi.org/10.1016/j.fmre.2021.11.005

2021-01-01

Fundamental Research

Abstract:AlGaN-based materials have exhibited considerable potential for fabricating ultraviolet (UV) light-emitting diodes (LEDs) owing to their direct, wide, and adjustable energy bandgap. AlGaN-based devices have extensive appli-cability owing to their stable physico-chemical properties. With decades of research effort, significant progress has been achieved in enhancing the working efficiency of AlGaN-based LEDs by optimizing the crystalline qual-ity, doping efficiency, and device design. In this review, methods to obtain high-quality AlGaN-based materials, achieve high doping efficiency, and design UV-LED structures are summarized and discussed. Finally, the issues that need to be addressed in AlGaN-based UV-LED devices are highlighted.
Monolithic Dual-Wavelength AlGaN-Based UV-LEDs with Controllable Spectral Profile

Tai Li,Bowen Sheng,Wei Luo,Tao Wang,Yixin Wang,Renchun Tao,Zexing Yuan,Tongxin Lu,Ye Yuan,Junjie Kang,Jiajia Yang,Zhaoying Chen,Bo Shen,Xinqiang Wang

DOI: https://doi.org/10.1021/acsphotonics.4c00114

IF: 7

2024-01-01

ACS Photonics

Abstract:Ultraviolet (UV) light sources with multiple wavelength emissions have many applications in different scenarios. However, there are rare reports on multiwavelength UV light-emitting diodes (LEDs). In this paper, through adopting dual-wavelength multiple quantum wells (MQWs) with a specific structure of an ultrathin AlGaN single quantum well (SQW) with emission at the UVC range grown on MQWs with emission at the UVB range, we fabricate a UV-LED with simultaneous emission at wavelengths of 278 and 307 nm. This dual-wavelength UV-LED exhibits a high wall-plug efficiency (WPE) of 3.86% under an operating current of 10 mA and demonstrates an impressive spectral stability with increasing current from 10 to 100 mA. Furthermore, we are able to manipulate the emission spectral profile of the dual-wavelength UV-LEDs by adjusting the thickness of the barrier between the UVC SQW and the UVB MQWs. This high-performance dual-wavelength UV-LED fabricated on an integrated monolithic chip with stable and controllable spectral characteristics is useful for expanding the applications of compact AlGaN-based UV-LEDs.
AIGaN-Based Multi-Type Distributed Bragg Reflectors Grown by MOCVD

Бо Лю,Zhang Rong,Zili Xie,Xiaoli Ji,Liang Li,Zhou Jian-jun,Jiang Ruo-Lian,Ping Han,Zheng Yang,Zheng Jianguo,Gong Hai-mei

2016-01-01

Journal of Semiconductors

Abstract:A1GaN-based multi-type distributed Bragg reflectors (DBRs) grown by metal-organic chemical vapor deposition (MOCVD)were investigated.These DBRs work at the wavelengths from blue/green to ultraviolet，which respectively com. pose of several periods of GaN/AlN，Al0.3Ga0.7 N/AlN，Al0.5 Ga0.5 N/AlN bi-layers grown on thick GaN templates.These DBRs show smooth surfaces with roughness less than lnm probed by atomic force microscopy.The good periodie structure and sharp interfaces are determined by high-resolution X-ray diffraction and cross-section TEM.The reflectance spectra of these DBRs are measured by ultraviolet.visible spectrometer，which show the reflectance and bandwidth relates to not only the number of stacks but also the difference of index of refraction.
High-Reflectivity AlGaN/AlN Distributed Bragg Reflector in Ultraviolet Region

Ji Xiao-Li,Jiang Ruo-Lian,Xie Zi-Li,Liu Bin,Zhou Jian-Jun,Li Liang,Han Ping,Zhang Rong,ZhengYou-Dou,Gong Hai-Mei

DOI: https://doi.org/10.1088/0256-307x/24/6/083

2007-01-01

Chinese Physics Letters

Abstract:Thirty-pair Al0.3Ga0.7N/AlN distributed Bragg reflectors centred at 320 nm are designed and grown on sapphire substrates by metalorganic chemical vapour deposition. No cracks are observed in the main area of the 2-inch wafer except for about 4 mm margin under an optical microscope. Regular stack of alternating layers is shown by scanning electron microscopy. Clear two-dimensional growth steps and very low surface roughness are shown by atomic force microscopy (AFM). Well-defined periodicity is shown by high resolution x-ray diffraction. High reflectivity of 93% at 313 nm with a bandwidth of 13 nm is obtained.
Photonic Crystal Tunnel Junction Deep Ultraviolet Light Emitting Diodes with Enhanced Light Extraction Efficiency

Walter Shin,Ayush Pandey,Xianhe Liu,Yi Sun,Zetian Mi

DOI: https://doi.org/10.1364/oe.380739

IF: 3.8

2019-01-01

Optics Express

Abstract:We report on the demonstration of top emitting AlGaN tunnel junction deep ultraviolet (UV) light emitting didoes (LEDs) operating at ∼267 nm. We show, both theoretically and experimentally, that the light extraction efficiency can be enhanced by nearly a factor of two with the incorporation of AlGaN nanowire photonic crystal structures. A peak wall-plug efficiency (WPE) ∼3.5% and external quantum efficiency (EQE) ∼5.4% were measured for AlGaN LEDs directly on-wafer without any packaging. This work demonstrates a viable path for achieving high efficiency deep UV LEDs through the integration of AlGaN planar and nanoscale structures.
AlGaN-Based Deep-Ultraviolet Light Emitting Diodes Fabricated on AlN/sapphire Template

Sang Li-Wen,Qin Zhi-Xin,Fang Hao,Zhang Yan-Zhao,Li Tao,Xu Zheng-Yu,Yang Zhi-Jian,Shen Bo,Zhang Guo-Yi,Li Shu-Ping,Yang Wei-Huang,Chen Hang-Yang,Liu Da-Yi,Kang Jun-Yong

DOI: https://doi.org/10.1088/0256-307x/26/11/117801

2009-01-01

Chinese Physics Letters

Abstract:We report on the growth and fabrication of deep ultraviolet (DUV) light emitting diodes (LEDs) on an AlN template which was grown on a pulsed atomic-layer epitaxial buffer layer. Threading dislocation densities in the AlN layer are greatly decreased with the introduction of this buffer layer. The crystalline quality of the AlGaN epilayer is further improved by using a low-temperature GaN interlayer between AlGaN and AlN. Electroluminescences of different DUV-LED devices at a wavelength of between 262 and 317 nm are demonstrated. To improve the hole concentration of p-type AlGaN, Mg-doping with trimethylindium assistance approach is performed. It is found that the serial resistance of DUV-LED decreases and the performance of DUV-LED such as EL properties is improved.

The taxonomic and ecological status of the environmentally restricted spongillid species of North America. IV. Spongilla heterosclerifera Smith 1918

AlGaN-based UV-C Distributed Bragg Reflector with a Λ-Cavity Designed for an External Cavity Structure Electron-Beam-pumped VCSEL

Ultraviolet-B Resonant-Cavity Light-Emitting Diodes with Tunnel Junctions and Dielectric Mirrors

High-Quality Crystal Growth and Characteristics of AlGaN-Based Solar-Blind Distributed Bragg Reflectors with a Tri-layer Period Structure

Properties of an AlGaN/AlN distributed-Bragg-reflector structure

Breaking the Transverse Magnetic-Polarized Light Extraction Bottleneck of Ultraviolet-C Light-Emitting Diodes Using Nanopatterned Substrates and an Inclined Reflector

GaAs/AlAs DBR optimized growth by GSMBE and its characterization

N-AlGaN Free Deep-Ultraviolet Light-Emitting Diode with Transverse Electron Injection

Vertical InGaN Light-Emitting Diode with Hybrid Distributed Bragg Reflectors

Advantages of AlGaN-based Deep-Ultraviolet Light-Emitting Diodes with an Al-composition Graded Quantum Barrier.

Design of a tandem distributed Bragg reflectors specialized for enhancing the efficiency of GaN-based ultraviolet light-emitting diodes

The Person and the Partner: Individual Differences Moderate the Relationship Between Partner Feedback and Condom Use

Preparation and Increased Optical Properties of Large-Area AlInGaN LEDs with Mesoporous AlGaN-Distributed Bragg Reflectors

Deep-ultraviolet LEDs with an Al-graded p-AlGaN layer exhibiting high wall-plug efficiency and high modulation bandwidth simultaneously

Highly efficient AlGaN-based deep-ultraviolet light-emitting diodes: from bandgap engineering to device craft

Review on the Progress of AlGaN-based Ultraviolet Light-Emitting Diodes

Monolithic Dual-Wavelength AlGaN-Based UV-LEDs with Controllable Spectral Profile

AIGaN-Based Multi-Type Distributed Bragg Reflectors Grown by MOCVD

High-Reflectivity AlGaN/AlN Distributed Bragg Reflector in Ultraviolet Region

Photonic Crystal Tunnel Junction Deep Ultraviolet Light Emitting Diodes with Enhanced Light Extraction Efficiency

AlGaN-Based Deep-Ultraviolet Light Emitting Diodes Fabricated on AlN/sapphire Template