A Near-Infrared Colloidal Quantum Dot Imager with Monolithically Integrated Readout Circuitry

Jing Liu,Peilin Liu,Dengyang Chen,Tailong Shi,Xixi Qu,Long Chen,Tong Wu,Jiangping Ke,Kao Xiong,Mingyu Li,Haisheng Song,Wei,Junkai Cao,Jianbing Zhang,Liang Gao,Jiang Tang

DOI: https://doi.org/10.1038/s41928-022-00779-x

IF: 33.255

2022-01-01

Nature Electronics

Abstract:Imagers that operate in the near-infrared region (wavelengths of 0.7–1.4 µm) are of use in applications such as material sorting, machine vision and autonomous driving. However, such imagers typically use the flip-chip method to connect infrared photodiodes with silicon-based readout integrated circuits, as the need for high-temperature processing and single-crystalline substrates prevents direct integration. This increases processing complexity and cost. Here we report high-resolution imagers that monolithically integrate near-infrared colloidal quantum dot photodiodes with complementary metal–oxide–semiconductor readout integrated circuits. The colloidal quantum dot photodetector is designed with a structure compatible with complementary metal–oxide–semiconductors and exhibits a spectral range of 400–1,300 nm, room-temperature detectivity of 2.1 × 10 12 Jones, −3 dB bandwidth of 140 kHz and linear dynamic range of over 100 dB. With this approach, we create a large (640 × 512 pixels) imager that exhibits a spatial resolution of 40 line pairs per millimetre at a modulation transfer function of 50%, and we show that it can be used for vein imaging and matter identification.