A self-powered ZnO nanoarrays/GaN heterojunction ultraviolet photodetectors grown on Si(111) substrate

Mingna Yan,Naisen Yu,Shiyu Du,Haiou Li,Yunfeng Wu
DOI: https://doi.org/10.1007/s12034-022-02679-4
IF: 1.878
2022-01-01
Bulletin of Materials Science
Abstract:A self-powered, ZnO nanorod arrays (NRs)/GaN/Si heterojunction ultraviolet (UV) photodetector was synthesized straightforwardly. This high-performance device has an excellent response under UV radiation without bias. The tensile stress at the ZnO/GaN/Si interface presumably strengthened the built-in electric field, which effectively separated and extracted the photogenerated electron–hole pairs. These results may provide a new synthetic pathway towards low-cost, high-performance, self-powered ZnO/GaN heterojunction UV photodetectors.
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