Abstract:A high performance NiO/Al2O3/n‐Si UV HPD, consisting of an ultrathin Al2O3 nanolayer (≈5.0 nm) between p‐NiO and n‐Si is fabricated and studied. It demonstrates excellent R and EQE of 15.8 A/W and 5.4 × 103% at −5 V, respectively. The high D* of 1.14 × 1013 Jones is obtained at −4 V. The HPD also exhibits fast response with rise and decay times of 80 and 184 μs, respectively. Ultraviolet (UV) photodetectors have gained much attention due to their numerous important applications ranging from environmental monitoring to space communication. To date, most p‐NiO/n‐Si heterojunction photodetectors (HPDs) exhibit poor UV responsivity and slow response. This is mainly due to a small valence band offset (ΔEV) at the NiO/Si interface and a high density of dangling bonds at the silicon surface. Herein, an UV HPD consisting of NiO/Al2O3/n‐Si is fabricated using magnetron sputtering technique. The HPD has a large rectification ratio of 2.4 × 105. It also exhibits excellent UV responsivity (R) of 15.8 A/W at −5 V and and detectivity (D*) of 1.14 × 1013 Jones at −4 V, respectively. The excellent performance of the HPD can be attributed to the defect passivation at the interfaces of the heterojunction and the efficient separation of photogenerated carriers by the Al2O3 nanolayer. The external quantum efficiency (EQE) of the HPD as high as 5.4 × 103%, hence implying a large optical gain due to carrier proliferation resulting from impact ionization. Furthermore, the ultrafast response speed with a rise time of 80 μs and a decay time of 184 μs are obtained.

A high performance self-powered heterojunction photodetector based on NiO nanosheets on an n-Si (1 0 0) modified substrate

NiO Nanosheet/gan Heterojunction Self-Powered Ultraviolet Photodetector Grown by a Solution Method

Self-Powered Broadband Photodetector Based on NiO/Si Heterojunction Incorporating Graphene Transparent Conducting Layer

A self-powered ZnO nanoarrays/GaN heterojunction ultraviolet photodetectors grown on Si(111) substrate

Self-Powered p-NiO/n-ZnO Heterojunction Ultraviolet Photodetector Based on Honeycomb Nano-Mesh Structure

Ultrahigh Performance UV Photodetector by Inserting an Al2O3 Nanolayer in NiO/n‐Si

Self-Powered and Broadband Photodetector Based on SnS2/ZnO1-xSxH Eterojunction

Unveiling Superior Solar-Blind Photodetection with a NiO/ZnGa2O4 Heterojunction Diode

Highly Sensitive and Stable Self-Powered UV Photodetector Based on Amorphous ZnGa<sub>2</sub>O<sub>4</sub>/NiO Type-II p-n Heterojunction via Low-Temperature and Band Alignment

Laser ablation fabrication of a p-NiO/n-Si heterojunction for broadband and self-powered UV–Visible–NIR photodetection

A self-powered ultraviolet photodiode using an amorphous InGaZnO/p-silicon nanowire heterojunction

Self-powered ultraviolet photodetector with very short and balanced response/recovery time based on ZnO/Si heterojunction with complex interface structure

A High‐Performance Self‐Powered UV‐Visible‐Infrared Broadband Photodetector Based on a Solution‐Processed Bi2Se3/Se Nanorods Heterojunction

Self-powered Ultrafast Broadband Photodetector Based on P-N Heterojunctions of CuO/Si Nanowire Array.

High-performance self-driven ultraviolet photodetector based on SnO2 p-n homojunction

High-performance self-powered photodetector based on Bi2O2Se nanosheets

Performance enhancement of a self-powered solar-blind UV photodetector based on ZnGa 2 O 4 /Si heterojunction via interface pyroelectric effect

High-performance broadband Si/ZnO heterojunction photodetector based on pyro-phototronic effect

A High‐Performance Self‐Powered UV‐Visible‐Infrared Broadband Photodetector Based on a Solution‐Processed Bi 2 Se 3 /Se Nanorods Heterojunction

ZnO@NiO Core-Shell Heterojunction Photoanode Modified with NiOOH Co-Catalyst for High-Performance Self-Powered Photoelectrochemical-Type UV Photodetector

Self-Powered Narrowband P-Nio/N-Zno Nanowire Ultraviolet Photodetector With Interface Modification Of Al2o3