Abstract:Anisotropic thermoelectric properties are studied in Ge1‐xInxSb2Te4 single crystals. The impurity band introduced by In‐doping enhances the Seebeck coefficient, while the strong anharmonicity caused by the weak chemical bonding and the mixed occupancy of Ge/Sb atoms on cation sites leads to low lattice thermal conductivity. Finally, zTmax and zTave of 1 and 0.68 are obtained along c‐axis. Layer‐structured GeSb2Te4 is a promising thermoelectric candidate, while its anisotropy of thermal and electrical transport properties is still not clear. In this study, Ge1–xInxSb2Te4 single crystals are grown by Bridgman method, and their anisotropic thermoelectric properties are systematically investigated. Lower electrical conductivity and higher Seebeck coefficient are observed in the c‐axis due to the higher effective mass in this direction. Intrinsically low lattice thermal conductivity is also observed in the c‐axis due to the weak chemical bonding and the strong lattice anharmonicity proved by density functional theory calculation. Indium doping introduces an impurity band in the bandgap of GeSb2Te4 and leads to the locally distorted density of states near the Fermi level, which contributes to enhanced Seebeck coefficient and improved power factor. Ultimately, a peak zT value of 1 at 673 K and an average zT value of 0.68 within 323–773 K are obtained in Ge0.93In0.07Sb2Te4 along the c‐axis direction, which are 54% and 79% higher than that of the pristine GeSb2Te4 single crystal, respectively. This work clarified the origin of intrinsic low lattice thermal conductivity and anisotropy transport properties in GeSb2Te4, and shed light on the performance optimization of other layered thermoelectric materials.

Structure, Electrical Properties, and Conduction Mechanism of New Germanate Mixed Zn-doped In2Ge2O7 Conductors

Anisotropic Lattice Thermal Conductivity In Topological Semimetal Zrgex (X = S, Se, Te): A First-Principles Study

Mixed electronic and oxide ionic conduction and migration mechanism in digermanate La2-xCaxGe2O7-x/2

Intrinsically Low Lattice Thermal Conductivity and Anisotropic Thermoelectric Performance in In‐doped GeSb2Te4 Single Crystals

Pressure-induced stable structures and physical properties of Sr–Ge system

Layer-Structured GaGeTe Compound as a Promising Thermoelectric Material

High-performance Thermoelectric Monolayer γ-GeSe and its Group-IV Monochalcogenide Isostructural Family

Impact of Non-Bridging Oxygens on the Thermal, Electrical and Optical Properties of Germanate Glasses and Exploration of the Germanate Anomaly

Structural Evolution and Thermoelectric Performance in (gete)m(sb2te3)n Compounds

X-ray Absorption Near-Edge Spectroscopy Study on Ge-doped Li7La3Zr2O12: Enhanced Ionic Conductivity and Defect Chemistry

Temperature-dependent conduction and transport mechanisms in pure and Zn-doped MgO nanomaterials

Strain mediated ultra-high electron mobility in Ge-doped two-dimensional Ga2O3

Achieving Ultralow Lattice Thermal Conductivity and High Thermoelectric Performance in GeTe Alloys Via Introducing Cu2Te Nanocrystals and Resonant Level Doping.

Defect Structure, Oxygen Ion Conduction, and Conducting Mechanism in Ruddlesden-Popper Sr3Zr2- xMxO7-0.5 x (M = Ga, Y, In)

Janus-like Structure and Resonance Level Actualized Ultralow Lattice Thermal Conductivity and Enhanced ZT ave in Mg 3 (Sb, Bi) 2 -Based Zintls

Janus-like Structure and Resonance Level Actualized Ultralow Lattice Thermal Conductivity and Enhanced ZTave in Mg3(Sb, Bi)2-Based Zintls

Designing 3D topological insulators by 2D-Xene (X = Ge, Sn) sheet functionalization in the GaGeTe-type structures

In-doping induced resonant level and thermoelectric performance enhancement in n-type GeBi 2 Te 4 single crystals with intrinsically low lattice thermal conductivity

High-performance electron-doped GeMnTe2: hierarchical structure and low thermal conductivity

Two-Dimensional-Like Phonons in Three-Dimensional-Structured Rhombohedral GeSe-Based Compounds with Excellent Thermoelectric Performance

Enhanced Thermoelectric Performance of In2O3-based Ceramics Via Nanostructuring and Point Defect Engineering.