X-ray Absorption Near-Edge Spectroscopy Study on Ge-doped Li7La3Zr2O12: Enhanced Ionic Conductivity and Defect Chemistry

Mian Huang,Wei Xu,Yang Shen,Yuan-Hua Lin,Ce-Wen Nan
DOI: https://doi.org/10.1016/j.electacta.2013.11.020
IF: 6.6
2014-01-01
Electrochimica Acta
Abstract:Ge-doped Li7La3Zr2O12 (LLZ) is prepared via the conventional solid-state reaction. Our results showed that doping Ge of less than 1 wt% could stabilize the cubic phase of garnet-type LLZ and also increase its ionic conductivity up to 8.28×10−4 S/cm at room temperature. When the content of Ge dopant is higher, GeO2 impurity phase would appear and there coexists cubic and tetragonal mixed structures, lowering the conductivity. By combining X-ray absorption near-edge spectroscopy and full multiple-scattering theory, we find that Ge more likely enters into the Li and La crystallographic sites instead of the Zr site, which provides understanding of the micro-structural modulation by Ge dopants and the subsequent enhancement in the ionic conductivity.
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