The Influence of Positive Ion Doping on the Basic Resistance of Zno As a Gas Sensor

Peng Zhang,Shuang Cao,Ning Sui,Yifeng Xu,Tingting Zhou,Yuan He,Tong Zhang
DOI: https://doi.org/10.2139/ssrn.4135370
2022-01-01
Abstract:Metal oxide semiconductor-based gas sensors can realize the highly sensitive detection to target gases at high temperature by constructing different nano/ micro structures. However, the excellent sensing performance is always associated with the very high original resistance, which brings about issues in the practical application. Herein, different cations (Al3+ , Sn4+ and Sb5+ ) doped ZnO nanoparticles were synthesized and used as the acetone sensing materials. Results show that the resistance of sensors based on Sn4+ doped ZnO was significantly reduced (from 5.18 MΩ to 0.28 MΩ) at 270 ºC without sacrificing acetone sensing responses. In addition, the gas sensor also exhibited the fast response/recovery time (1/10 s) and great long-term stability. The electron compensation and improved adsorbing oxygen ability for the Sn4+ doped ZnO nanoparticles contributed to the relative low resistance and the enhanced sensing performances.
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