Abstract:The MEMS resonant accelerometer is a kind of inertial device, which is designed based on electrostatic principles and sensitive to ionizing irradiation. Ionizing irradiation may lead to many problems in a MEMS resonant accelerometer, such as performance degradation, damage and failure. However, the reasons of these phenomena are still unsettled, and the mechanism of ionizing irradiation effect of the MEMS resonant accelerometer needs a profound study. In this paper, two kinds of MEMS resonant accelerometers with Si and SiO2 glass substrate respectively were taken as the research objects. 10keV, 20keV and 30keV electron irradiation were exerted on accelerometers. SEM was used to observe the movement of the accelerometer movable combs under electron irradiation. The results showed that movable combs of the accelerometer with SiO2 glass substrate moved periodically under ionizing irradiation. The movable combs would continually move toward the fixed combs until a final position was reached, then movable combs would rebound to the initial position and a new cycle with the above process would begin. The motion period of movable combs decreased with the increase of electron irradiation energy. Meanwhile, the movable combs of the accelerometer with Si substrate did not move significantly under electron irradiation. This phenomenon could be caused by the material performance difference between Si and SiO2 glass. As a dielectric material, SiO2 glass would go through serious charge accumulation under electron irradiation, and the induced electrostatic force exerted on movable combs, resulting in the movement. This paper showed that the MEMS resonant accelerometer with Si substrate had better ionizing irradiation resistance than the accelerometer with SiO2 glass substrate, which could provide a theoretical basis for the irradiation reinforcement of MEMS inertial devices.

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