Abstract:We have conducted As and Ga Nuclear Magnetic Resonance (NMR) experiments to investigate order/disorder in AlxGa1 xAs lift-off films with x B 0.297 and 0.489. We were able to identify all possible As(AlnGa4 n) sites with n = 0–4 coordinations in As NMR spectra using spin-echo experiments at 18.8 Tesla. This was achieved by employing high rf field strengths using a small solenoid coil and an NMR probe specifically designed for this purpose. Spectral deconvolution, using an evolutionary algorithm, complies with the absence of long-range order if a CuAu based order parameter is imposed. An unconstrained fit shows a deviation of the statistics imposed by this type of ordering. The occupational disorder in the Ga and Al positions is reflected in a distribution of the Electric Field Gradients (EFGs) experienced at the different arsenic sites. We established that this can be modelled by summing the effects of the first coordination sphere and a Czjzek type distribution resulting from the compositional variation in the Al/Ga sub-lattice in the higher coordination spheres. Ga 3QMAS and nutation data exclude the presence of highly symmetric sites and also show a distribution in EFG. The experimentally obtained quadrupolar interactions are in good agreement with calculations based on Density Functional Theory (DFT). Using additivity of EFG tensors arising from distant charge perturbations, we could use DFT to model the EFG distributions of the n = 0–4 sites, reproducing the Czjzek and extended Czjzek distributions that were found experimentally. On the basis of these calculations we conclude that the As quadrupolar interaction is sensitive to compositional modulations up to the 7th coordination shell in these systems.

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Ab Initio Calculation of the Structure for GaAs()-(2×2)Reconstruction

Ab Initio Investigation of Structure, Stability, Polarizability, and Electronic Structure of Ga4As4 Cluster

First Principles Study on the Structural Stability and Optoelectronic Properties of InxGa1−xAs Materials with Different Indium Component

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A solid-state NMR and DFT study of compositional modulations in Al x Ga

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FP-LMTO simulation of the physical properties of arsenic-based binary XAs(X = Sc, and Al) compounds

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A Comparative Study of the Structural, Electronic, and Optical Properties of GaAs Phases Using Different Exchange-Correlation Functionals

First-principles Calculations on the Crystal, Electronic Structures and Elastic Properties of Ag-rich Γ′ Phase Approximates in Al–Ag Alloys

Electronic transport and optical properties of five different phases (α, β, ε , δ and γ) of Ga2O3: A first-principles study

Theoretical Calculation of Electronic Structure and Optical Properties of Two-Dimensional GaAs

Assessment of Optical and Phonon Characteristics in MOCVD-Grown (AlxGa1-x)0.5In0.5P/n+-GaAs Epifilms

Electronic properties and stability of M<sub>2</sub>O<sub>3</sub> (M = Al, Ga, In) and alloy (M<sub>x</sub>Ga<sub>1-x</sub>)<sub>2</sub>O<sub>3</sub> in and phases: A theoretical study

SPANISH 1992 (S92): corpus-based analysis of present-day Spanish for medical purposes

A First‐principles Study of the Structural, Magnetic, Optical Properties and Doping Effect in Chromium Arsenide

Optical Properties of Ordered and Randomly Disordered AlAs/GaAs Short-Period Superlattices.

First-Principles Study on the Geometry and Electronic Structures of Iiia Atoms Doped Alpha-Al2o3:V-O