Cation Disorder and Thermoelectric Properties in Layered Ternary Compounds MBi2Te4 (M = Ge, Sn)

Hu Zhang,Lu,Shaobo Mi

DOI: https://doi.org/10.1039/d1tc04390k

IF: 6.4

2021-01-01

Journal of Materials Chemistry C

Abstract:Atomic-scale investigation of layered thermoelectric materials reveals the positional disordering of heterovalent cations (Ge+2/Bi+3 and Sn+2/Bi+3) in the crystal lattice (the 3a Wyckoff site) of ternary MBi2Te4 (M = Ge, Sn) compounds.

What problem does this paper attempt to address?

Cation disorder and thermoelectric properties in layered ternary compounds MBi 2 Te 4 (M = Ge, Sn)

Hu Zhang,Lu Lu,Shaobo Mi

DOI: https://doi.org/10.1039/d1tc04390k

IF: 6.4

2022-01-01

Journal of Materials Chemistry C

Abstract:Atomic-scale investigation of layered thermoelectric materials reveals the positional disordering of heterovalent cations (Ge +2 /Bi +3 and Sn +2 /Bi +3 ) in the crystal lattice (the 3 a Wyckoff site) of ternary MBi 2 Te 4 (M = Ge, Sn) compounds.

materials science, multidisciplinary,physics, applied
Atomic Disordering Advances Thermoelectric Group IV Telluride Alloys with a Multiband Transport

J. Tang,Z. Yao,Y. Wu,S. Lin,F. Xiong,W. Li,Y. Chen,T. Zhu,Y. Pei

DOI: https://doi.org/10.1016/j.mtphys.2020.100247

IF: 11.021

2020-01-01

Materials Today Physics

Abstract:Minimization of lattice thermal conductivity plays a key role in advancing thermoelectrics, a typical strategy of which is the introduction of atomic disorder for strong phonon scattering through atomic mass and strain fluctuations. Maximizing this type of scattering requires dense point defects with large mass/strain contrasts, motivating the current work to focus on the thermoelectric properties of Sn1/3Ge1/3Pb1/3Te with massive disordered cations. Thanks to the formation of a solid solution around this particular composition, which enables an atomic disorder significantly higher than ever reported in IV-VI alloys, the resultant strong phonon scattering leads to a dramatic reduction in lattice thermal conductivity in the entire temperature range. In addition, MnTe alloying leads to a maximization of transporting valence bands for a superior electronic performance. These effects end up with both an extraordinary peak figure of merit and a significant improvement in its average. This leads Sn1/3Ge1/3Pb1/3Te alloys, crystallographically close relatives to SnTe, to be significantly superior in thermoelectric performance to that of SnTe.
Promising Cubic MnGeTe 2 Thermoelectrics

Binqiang Zhou,Wen Li,Xiao Wang,Juan Li,Liangtao Zheng,Bo Gao,Xinyue Zhang,Yanzhong Pei

DOI: https://doi.org/10.1007/s40843-018-9328-5

2018-01-01

Science China Materials

Abstract:Semiconducting cubic group IV monotellurides, including PbTe and SnTe, have historically led most of the advancements in thermoelectrics. Recently, noncubic ones such as GeTe and MnTe have also shown to be promising, which motivates the current work focusing on the thermoelectric properties of MnGeTe 2 , a derivative compound of noncubic GeTe and MnTe but crystalizing in a cubic structure. This compound intrinsically comes with a carrier concentration as high as ~3.6×10 21 cm −3 , indicating the existence of highconcentration cation vacancies due to Ge-precipitation. This intrinsic carrier concentration is much higher than that needed for thermoelectric applications but can be successfully decreased to ~9×10 20 cm −3 for MnGe 0.9 Bi 0.1 Te 2 at room temperature. Such a broad carrier concentration not only offers a full assessment of its electronic transport properties according to a single parabolic band model with acoustic scattering, but also enables an optimization for thermoelectric power factor. The low lattice thermal conductivity of ~1.2 W m −1 K −1 or lower in the entire temperature range, can be understood by the highly disordered cations and cation vacancies. A peak zT approaching 1.0 at 850 K was achieved in materials at an optimal carrier concentration of ~9×10 20 cm −3 , an isotropic cubic structure as well as a Vickers hardness of >200 H V , strongly indicating MnGeTe 2 as a promising thermoelectric material.
High Thermolectric Properties of Disordered Ge0.8-ySn0.2MnyTe Semiconductor

Li Zhen,Zhang Yuanzhi,Li Shuailing,Lou Shiyun,Zhou Shaomin

DOI: https://doi.org/10.1016/j.jallcom.2024.177070

IF: 6.2

2025-01-01

Journal of Alloys and Compounds

Abstract:For layered GeTe-based materials, the typical strategy to reduce the thermal conductivity of the crystal lattice is to introduce atomic disorder, increase the lattice non-harmonicity, and maximize the fluctuations of the quality/stress field in the sample. Since Sn/Mn can easily form solid solutions in the GeTe matrix, the degree of disorder in the sample is much higher than the level reported in IV-VI alloys in the past, which leads to a strong phonon scattering and a sharp decrease in the lattice thermal conductivity over the entire temperature range. In addition, Mn plays a significant role in changing the valence band structure of GeTe, i.e., Mn doping enhances the convergence of the light valence band and the heavy valence band and the change of the bandgap, significantly increasing the Seebeck coefficient of the GeTe matrix, resulting in a significant improvement in the thermoelectric performance of the Sn/Mn co-doped synthesized GeTe-based materials. Finally, we found that treating the sample with layered disorder is an effective method to improve the thermoelectric performance, and this study has certain reference value for the development of novel toxic-free, high-performance thermoelectric materials.
The Criteria for Beneficial Disorder in Thermoelectric Solid Solutions

Heng Wang,Aaron D. LaLonde,Yanzhong Pei,G. Jeffery Snyder

DOI: https://doi.org/10.1002/adfm.201201576

IF: 19

2013-01-01

Advanced Functional Materials

Abstract:Forming solid solutions has long been considered an effective approach for good thermoelectrics because the lattice thermal conductivities are lower than those of the constituent compounds due to phonon scattering from disordered atoms. However, this effect could also be compensated by a reduction in carrier mobility due to electron scattering from the same disorder. Using a detailed study of n-type (PbTe)1x (PbSe)x solid solution (0 x 1) as a function of composition, temperature, and doping level, quantitative modeling of transport properties reveals the important parameters characterizing these effects. Based on this analysis, a general criterion for the improvement of zT due to atomic disorder in solid solutions is derived and can be applied to several thermoelectric solid solutions, allowing a convenient prediction of whether better thermoelectric performance could be achieved in a given solid solution. Alloying is shown to be most effective at low temperatures and in materials that are unfavorable for thermoelectrics in their unalloyed forms: high lattice thermal conductivity (stiff materials with low Gruneisen parameters) and high deformation potential.
High thermoelectric properties of disordered layered Ge1-xSnxTe semiconductors

Yuan Zhi Zhang,Shuai Ling Li,Zhen Li,Shi Yun Lou,Shao Min Zhou

DOI: https://doi.org/10.1016/j.matlet.2022.132683

IF: 3

2022-10-01

Materials Letters

Abstract:For layered GeTe based materials, a typical strategy to reduce the thermal conductivity of the lattice is to introduce disorder and increase the lattice anharmonicity of the material, while enhancing the mass/stress field fluctuations of the sample. Due to the Sn doping, the GeTe-based material forms a disordered structure, and the resulting strong phonon scattering leads to a sharp decrease in the lattice thermal conductivity over the entire temperature range. In addition, Sn doping was able to enhance the effective mass of the material, significantly increasing the seebeck coefficient of GeTe, ZT 1.49 at 730 K. Finally, the thermoelectric properties of the GeTe-based materials synthesized by Sn doping are significantly improved.

materials science, multidisciplinary,physics, applied
Off‐Centering of Ge Atoms in GeBi2Te4 and Impact on Thermoelectric Performance

Jinfeng Dong,Lei Hu,Jue Liu,Yukun Liu,Yilin Jiang,Zhiling Yu,Xian Yi Tan,Ady Suwardi,Qiang Zheng,Qian Li,Jing-Feng Li,Vinayak P. Dravid,Qingyu Yan,Mercouri G. Kanatzidis

DOI: https://doi.org/10.1002/adfm.202314499

IF: 19

2024-01-01

Advanced Functional Materials

Abstract:The crystal structure and transport properties of GeBi2Te4 are investigated as a layered compound with potential applications as thermoelectric materials. A disordered arrangement of Ge and Bi atoms in a septuple-layer structure is discovered through synchrotron radiation X-ray diffraction and transmission electron microscopy. Neutron pair distribution function analysis revealed the presence of discordant Ge atoms with an off-centering distance of 0.12 & Aring; at 300 K. The thermal conductivity of GeBi2Te4 is very low due to the strong phonon scattering. This is a result of the three Einstein local oscillators coupled with the disordered arrangement of atoms. This study also explores further the structural characteristics of these materials and their associated phonon scattering processes. The effect of Sb substitution for Ge on the electrical transport properties of the sample is profound, resulting in a change from p-type to n-type conduction. An enhanced thermoelectric figure of merit (ZT) of 0.45 at 523 K in the in-plane direction is obtained. This research provides valuable insights into the crystal structure and transport properties of GeBi2Te4, showcasing its promising role as a thermoelectric material with potential for near-room-temperature applications.
Discordant Distortion in Cubic GeMnTe2 and High Thermoelectric Properties of GeMnTe2- x%SbTe

Jinfeng Dong,Yilin Jiang,Yandong Sun,Jue Liu,Jun Pei,Wei Li,Xian Yi Tan,Lei Hu,Ning Jia,Ben Xu,Qian Li,Jing-Feng Li,Qingyu Yan,Mercouri G Kanatzidis

DOI: https://doi.org/10.1021/jacs.2c12877

2023-01-25

Abstract:GeMnTe2 adopts a cubic rock salt structure and is a promising mid-temperature thermoelectric material. The pair distribution function analysis of neutron total scattering data, however, indicates that GeMnTe2 is locally distorted from the ideal rock salt structure with Ge2+ cations being discordant and displaced ∼0.3 Å off the octahedron center. By alloying GeMnTe2 with SbTe, the carrier concentration can be tuned in GeMnTe2-x%SbTe (x = 15.1), leading to converged multiple broad valence bands and a high Seebeck coefficient of >200 μV K-1 from 300 to 823 K. The system exhibits a large density-of-state effective mass of >10 me and a high weighted mobility of 80 cm2 V-1 s-1, leading to a power factor of 15 μWcm-1 K-2 at 823 K. The composition GeMnTe2-15.1%SbTe exhibits very low lattice thermal conductivity of ∼0.5 Wm-1 K-1 at 823 K, attributed to the combination of off-centering cations in the rock salt structure, Ge/Mn positional disorder, dislocations, and abundant Ge-rich and Mn-rich nanoparticles. A ZT value of ∼1.5 can be achieved for GeMnTe2-15.1%SbTe with a ZTave of 0.96 in the temperature range of 400-823 K.
Cation Substitution and Size Effects in Ca2ZnSb2 and Yb2MnSb2: Crystal and Electronic Structures and Thermoelectric Properties

Kefeng Liu,Qian Liu,Qiqi Wang,Yuanyuan Su,Shun Zhou,Xiao-Cun Liu,Sheng-Qing Xia

DOI: https://doi.org/10.1021/acs.inorgchem.3c00491

IF: 4.6

2023-01-01

Inorganic Chemistry

Abstract:Zintl compounds often feature complex structural fragments and small band gaps, favoring promising thermoelectric properties. In this work, a new phase Ca2ZnSb2 is synthesized and characterized to be a LiGaGe-type structure. It is isotypic to Yb2MnSb2 with half vacancies at transition metal sites and undergoes a phase transition to Ca9Zn4+xSb9 after annealing. Interestingly, Ca2ZnSb2 and Yb2MnSb2 are amenable to diverse doping mechanisms at different sites. Here, by substituting smaller Li on cation sites, two novel layered compounds Ca1.84(1)Li0.16(1)Zn0.84(1)Sb2 and Yb1.82(1)Li0.18(1)Mn0.96(1)Sb2 with the P63/mmc space group are discovered, which can be viewed as derivatives of LiGaGe type. Despite having lower occupancy, the structural stability is improved compared with the prototype compounds owing to the reduced interlayered distances. Besides, the band structure analyses demonstrate that the bands near the Fermi level are mainly governed by the interlayered interaction. Due to the highly disordered structure, Yb1.82Li0.18Mn0.96Sb2 features ultralow thermal conductivity from 0.79 to 0.47 W·m-1·K-1 among the testing range; in addition, a remarkable Seebeck coefficient of 270.77 μV·K-1 at 723 K is observed. The discovery of the Ca2ZnSb2 phase enriches the 2-1-2 map, and the size effect induced by cations provides new ideas for material designing.
Structural Disorder in the High-Temperature Cubic Phase of GeTe

Ming Xu,Zhenyu Lei,Junhui Yuan,Kanhao Xue,Yanrong Guo,Songyou Wang,Xiangshui Miao,Riccardo Mazzarello

DOI: https://doi.org/10.1039/c8ra02561d

IF: 4.036

2018-01-01

RSC Advances

Abstract:In traditional materials science, structural disorder tends to break the symmetry of the lattice. In this work, however, we studied a case which may be opposite to this intuition. The prototypical phase change material, GeTe, undergoes the phase transition from the rhombohedral structure to a more symmetric cubic one at ∼625 K. Using ab initio molecular dynamics simulations, we demonstrated that even in the cubic phase, the lattice is constructed by random short and long bonds, instead of bonds with a uniform length. Such bifurcation of the bond lengths enabled by Peierls-like distortion persists in the entire temperature range (0-900 K), yet with different degrees of disorder, e.g., the atoms are distorted along a certain direction in the rhombohedral phase (i.e., structural order) but the distortion varies stochastically in terms of direction and amplitude at high T (i.e., structural disorder). A more symmetric lattice frame coexisting with severe local structural disorder is the signature of this cubic GeTe. Our simulations have provided a theoretical support on the disordered Peierls-like distortion in the high-T cubic phase discovered earlier by X-ray experiments. By modulating the physical properties that different degrees of disorder may induce, we are able to design better functional materials for various applications in electronic and photonic devices.
(GeTe)1-x(AgSnSe2)x: Strong Atomic Disorder-Induced High Thermoelectric Performance near the Ioffe-Regel Limit

Gege Liang,Tu Lyu,Lipeng Hu,Wanbo Qu,Shizhen Zhi,Jibiao Li,Yang Zhang,Jian He,Junqin Li,Fusheng Liu,Chaohua Zhang,Weiqin Ao,Heping Xie,Haijun Wu

DOI: https://doi.org/10.1021/acsami.1c14801

IF: 9.5

2021-01-01

ACS Applied Materials & Interfaces

Abstract:In thermoelectrics, the material's performance stems from a delicate tradeoff between atomic order and disorder. Generally, dopants and thus atomic disorder are indispensable for optimizing the carrier concentration and scatter short-wavelength heat-carrying phonons. However, the strong disorder has been perceived as detrimental to the semiconductor's electrical conductivity owing to the deteriorated carrier mobility. Here, we report the sustainable role of strong atomic disorder in suppressing the detrimental phase transition and enhancing the thermoelectric performance in GeTe. We found that AgSnSe2 and Sb co-alloying eliminates the unfavorable phase transition due to the high configurational entropy and achieve the cubic Ge(1-x-y)SbyTe(1-x)(AgSnSe2)(x) solid solutions with cationic and anionic site disorder. Though AgSnSe2 substitution drives the carrier mean free path toward the Ioffe-Regel limit and minimizes the carrier mobility, the increased carrier concentration could render a decent electrical conductivity, affording enough phase room for further performance optimization. Given the lowermost carrier mean free path, further Sb alloying on Ge sites was implemented to progressively optimize the carrier concentration and enhance the density-of-state effective mass, thereby substantially enhancing the Seebeck coefficient. In addition, the high density of nanoscale strain clusters induced by strong atomic disorders significantly restrains the lattice thermal conductivity. As a result, a state-of-the-art zT approximate to 1.54 at 773 K was attained in cubic Ge0.58Sb0.22Te0.8(AgSnSe2)(0.2). These results demonstrate that the strong atomic disorder at the high entropy scale is a previously underheeded but promising approach in thermoelectric material research, especially for the numerous low carrier mobility materials.
Atomic Disorders in Layer Structured Topological Insulator SnBi 2 Te 4 Nanoplates

Yi-Chao Zou,Zhi-Gang Chen,Enze Zhang,Fantai Kong,Yan Lu,Lihua Wang,John Drennan,Zhongchang Wang,Faxian Xiu,Kyeongjae Cho,Jin Zou

DOI: https://doi.org/10.1007/s12274-017-1679-z

IF: 9.9

2018-01-01

Nano Research

Abstract:Identification of atomic disorders and their subsequent control has proven to be a key issue in predicting, understanding, and enhancing the properties of newly emerging topological insulator materials. Here, we demonstrate direct evidence of the cation antisites in single-crystal SnBi2Te4 nanoplates grown by chemical vapor deposition, through a combination of sub-ångström-resolution imaging, quantitative image simulations, and density functional theory calculations. The results of these combined techniques revealed a recognizable amount of cation antisites between Bi and Sn, and energetic calculations revealed that such cation antisites have a low formation energy. The impact of the cation antisites was also investigated by electronic structure calculations together with transport measurement. The topological surface properties of the nanoplates were further probed by angle-dependent magnetotransport, and from the results, we observed a two-dimensional weak antilocalization effect associated with surface carriers. Our approach provides a pathway to identify the antisite defects in ternary chalcogenides and the application potential of SnBi2Te4 nanostructures in next-generation electronic and spintronic devices.
Band Modification Towards High Thermoelectric Performance of SnSb2Te4 with Strong Anharmonicity Driven by Cation Disorder

Hong Wu,Peng Chen,Zizhen Zhou,De Zhang,Xiangnan Gong,Bin Zhang,Yang Zhou,Kunling Peng,Yanci Yan,Guiwen Wang,Jun Liu,Dengfeng Li,Guang Han,Guoyu Wang,Xu Lu,Xiaoyuan Zhou

DOI: https://doi.org/10.1016/j.jmst.2022.12.075

2023-01-01

Journal of Material Science and Technology

Abstract:As a typical (IV-VI)x(V2VI3)y compound, the tetradymite-like layered SnSb2Te4-based compounds have attracted increasing attention in the thermoelectric community owing to the intrinsically low lattice thermal conductivity. Nevertheless, the effect of cations disorder on the inherent physical characteris-tics remains puzzling, and its inferior Seebeck coefficient is the bottleneck to achieving high thermo-electric performance. In this work, the thermoelectric properties of polycrystalline InxSn1 -xSb2(Te1 -ySey)4 (0 <= x <= 0.1, 0 <= y <= 0.15) samples are comprehensively investigated. In conjunction with the calcu-lated band structure and experimental results, the Seebeck coefficient and power factor are markedly improved after the introduction of indium and selenium, which originates from the combined effects of the emergent resonant states and converged valence bands along with optimal carrier concentration. Additionally, compared with the ordered lattice structure, the disordered cations occupancy in SnSb2Te4 further strengthens lattice anharmonicity and reduces phonon group velocity verified by first-principles calculations, securing intrinsically low lattice thermal conductivity. Finally, a record zT value of similar to 0.6 at 670 K and an average zT of similar to 0.4 between 320 and 720 K are obtained in the In0.1Sn0.9Sb2Te3.4Se0.6 sam-ple, being one of the highest zT values among SnSb2Te4-based materials. This work not only demonstrates that SnSb2Te4-based compounds are promising thermoelectric candidates, but also provides guidance for the promotion of thermoelectric performance in a broad temperature range. (c) 2023 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.
Structural Evolution and Thermoelectric Performance in (gete)m(sb2te3)n Compounds

Shuo Chen,Keke Liu,Tingting Luo,Lin Liao,Zhen Yang,Shenlong Zhong,Jinsong Wu,Xianli Su,Poudeu,Qingjie Zhang,Xinfeng Tang

DOI: https://doi.org/10.1016/j.mtphys.2024.101455

IF: 11.021

2024-01-01

Materials Today Physics

Abstract:Exploring the relationship between crystal structure and thermoelectric performance is a pivotal topic in the thermoelectric field. In this study, we have comprehensively investigated the correlation between the structural evolution of (GeTe)m(Sb2Te3)n pseudo-binary system and the thermoelectric properties. The proportion of van der Waals bonds increases with the rising Sb2Te3 content, resulting in an increase in the anisotropy of the electrical conductivity and a decrease in the average sound velocity. Additionally, the cation sites in the crystal lattice of these compounds exhibit a mixed occupancy of Ge/Sb atoms, although the cation sites adjacent to the van der Waals gaps are predominantly occupied by Sb atoms. The ultra-low lattice thermal conductivity of the GST124 and GST147 compounds is mainly attributed to the high concentration of van der Waals bonds and enhanced phonon scattering arising from Ge/Sb mixed cation occupancy and high density of defect structures. The high electrical conductivity combined with the low lattice thermal conductivity enables GST124 and GST147 compounds to achieve a maximum ZT value of 0.56 and 0.57, respectively. Higher thermoelectric performance can be achieved through optimization of the microstructure as well as the carrier concentration.
Long-range Ordering and Local Structural Disordering of BiAgSe2 and BiAgSeTe Thermoelectrics

Weifeng Huang,Yingcai Zhu,Yong Liu,Shi Tao,Changchun Yang,Qianshun Diao,Zhen Hong,Haijiao Han,Lijuan Liu,Wei Xu

DOI: https://doi.org/10.1039/d1cp03676a

2021-01-01

Abstract:Thermoelectric materials are promising for energy harvesting using waste heat. The thermal management of the thermoelectric materials attract scientific and technological interests. The narrow bandgap semiconductor BiAgSe2 is a good candidate for thermoelectric materials due to its ultralow thermal conductivity. The mother compound BiAgSe2 crystallizes in hexagonal symmetry at room temperature, but experiences structural transitions to cubic phase at high temperature. By contrast, the daughter compound BiAgSeTe exhibits long range ordering and crystallizes into cubic phase at room temperature. Nevertheless, the local structural disorderings due to the Bi3+ and Ag+ anti-site defects, as well as local structural distortions, are ubiquitous in both parent BiAgSe2 and BiAgSeTe. BiAgSeTe exhibits distinct transport properties owing to the disordering-induced drastic changes in the electronic band structure, as well as the scattering dictated by the point defects. It is suggested that BiAgSe2 and BiAgSeTe could be good candidates for phonon glass and crystal glass (PGEC)-type thermoelectrics.
Thermoelectric Properties of Cu4Ge3Se5 with an Intrinsic Disordered Zinc Blende Structure

Bing Shan,Siqi Lin,Zhonglin Bu,Jing Tang,Zhiwei Chen,Xinyue Zhang,Wen Li,Yanzhong Pei

DOI: https://doi.org/10.1039/c9ta14068a

IF: 11.9

2020-01-01

Journal of Materials Chemistry A

Abstract:Ternary Cu4Ge3Se5with a disordered zinc blende structure shows a low intrinsic lattice thermal conductivity and potential thermoelectric performance.
Suppressing Lone-Pair Expression Endows Room-Temperature Cubic Structure and High Thermoelectric Performance in GeTe-based Materials

F. Guo,M. Liu,J. Zhu,Z. Liu,Y. Zhu,M. Guo,X. Dong,Q. Zhang,Y. Zhang,W. Cai,J. Sui

DOI: https://doi.org/10.1016/j.mtphys.2022.100780

IF: 11.021

2022-01-01

Materials Today Physics

Abstract:The stereochemical expression of ns(2) lone-pair electrons in specific IV -VI group semiconductors is pivotal to lattice instability, which induces ferroelectric phase transition. In the thermoelectric device working temperature range, the distinct change of thermal expansion coefficient, however, is introduced by phase transition and then severely restrains material's critical applications. Herein, taking the example of thermoelectric GeTe, the hidden role of manipulating lone pair expression to control the crystal structure is theoretically unraveled. Moreover, it is experimentally demonstrated that LiBiTe2-alloyed GeTe possess a room-temperature cubic structure and competitive thermoelectric performance. Density functional theory calculations reveal that reducing the charge orientation caused by the stereochemical activity of cation lone-pair electrons in GeTe is an effective strategy to achieve room-temperature cubic structure. LiBiTe2 is found to be a novel alloying agent to realize crystal structure manipulating, carrier concentration optimization, multi-band convergence, and lattice softening. Benefiting from the optimized electrical and thermal transport properties, an ultrahigh ZTave of 1.22 within 300-773 K in cubic (GeTe)(0.80)(LiBiTe2)(0.20) is achieved. This work provides a new insight into manipulating lone pair expression to control crystal structure, and promotes the development and application of cubic GeTe-based materials.
Mechanism of Thermoelectric Performance Enhancement in CaMg2 Bi2 -Based Materials with Different Cation Site Doping.

Muchun Guo,Ming Liu,Jianbo Zhu,Yuke Zhu,Fengkai Guo,Wei Cai,Yongsheng Zhang,QinYong Zhang,Jiehe Sui

DOI: https://doi.org/10.1002/smll.202306251

IF: 13.3

2024-01-01

Small

Abstract:Chemical bonds determine electron and phonon transport in solids. Tailoring chemical bonding in thermoelectric materials causes desirable or compromise thermoelectric transport properties. In this work, taking an example of CaMg2 Bi2 with covalent and ionic bonds, density functional theory calculations uncover that element Zn, respectively, replacing Ca and Mg sites cause the weakness of ionic and covalent bonding. Electrically, Zn doping at both Ca and Mg sites increases carrier concentration, while the former leads to higher carrier concentration than that of the latter because of its lower vacancy formation energy. Both doping types increase density-of-state effective mass but their mechanisms are different. The Zn doping Ca site induces resonance level in valence band and Zn doping Mg site promotes orbital alignment. Thermally, point defect and the change of phonon dispersion introduced by doping result in pronounced reduction of lattice thermal conductivity. Finally, combining with the further increase of carrier concentration caused by Na doping and the modulation of band structure and the decrease of lattice thermal conductivity caused by Ba doping, a high figure-of-merit ZT of 1.1 at 823 K in Zn doping Ca sample is realized, which is competitive in 1-2-2 Zintl phase thermoelectric systems.
Structural Evolution and Thermoelectric Performance in (get E) M (sb 2 Te 3 ) N Compounds

Shuo Chen,Keke Liu,Tingting Luo,Lin Liao,Zhen Yang,Shenlong Zhong,Jinsong Wu,Xianli Su,Poudeu,Qingjie Zhang,Xinfeng Tang

DOI: https://doi.org/10.1016/j.mtphys.2024.101455

IF: 11.021

2024-01-01

Materials Today Physics

Abstract:Exploring the relationship between crystal structure and thermoelectric performance is a pivotal topic in the thermoelectric field. In this study, we have comprehensively investigated the correlation between the structural evolution of (GeTe) m (Sb 2 Te 3 ) n pseudo-binary system and the thermoelectric properties. The proportion of van der Waals bonds increases with the rising Sb 2 Te 3 content, resulting in an increase in the anisotropy of the electrical conductivity and a decrease in the average sound velocity. Additionally, the cation sites in the crystal lattice of these compounds exhibit a mixed occupancy of Ge/Sb atoms, although the cation sites adjacent to the van der Waals gaps are predominantly occupied by Sb atoms. The ultra-low lattice thermal conductivity of the GST124 and GST147 compounds is mainly attributed to the high concentration of van der Waals bonds and enhanced phonon scattering arising from Ge/Sb mixed cation occupancy and high density of defect structures. The high electrical conductivity combined with the low lattice thermal conductivity enables GST124 and GST147 compounds to achieve a maximum ZT value of 0.56 and 0.57, respectively. Higher thermoelectric performance can be achieved through optimization of the microstructure as well as the carrier concentration.
High Thermoelectric Performance of Two-Dimensional Layered AB2Te4 (A = Sn, Pb; B = Sb, Bi) Ternary Compounds

Yuhong Huang,Hongkuan Yuan,Hong Chen

DOI: https://doi.org/10.1039/d2cp05258j

IF: 3.3

2022-01-01

Physical Chemistry Chemical Physics

Abstract:The thermoelectric properties of two-dimensional layered ternary compounds AB(2)Te(4), in which A (Sn, Pb) and B(Sb, Bi) are group-IV and group-V cations, respectively, were investigated by using first-principles based transport theory. These septuple-atom-layer monolayers have wider band gaps with respect to their bulks, which extend their operating temperature and inhibit the bipolar carrier conduction and thermal conductivity, and more importantly, their energy bands exhibit multiple valence band convergence to a narrow energy range near the Brillouin zone center, which induces an optimal p-type power factor up to 10.94-32.11 W m(-1) K-2 at room temperature. Moreover, these monolayers contain heavy atomic masses and high polarizability of some chemical bonds, leading to small group velocities of phonons and anharmonic phonon behavior that produce an intrinsic lattice thermal conductivity as low as 0.79-3.13 W m(-1) K-1 at room temperature. Thus, these monolayers act as p-type thermoelectric materials with thermoelectric figure of merit of up to 2.6-5.5 for SnSb2Te4, 0.7-2.2 for PbSb2Te4, and 1.6-4.2 for PbBi2Te4 in the temperature range of 300 to 750 K, and 4.5-5.9 for SnBi2Te4 in the temperature range of 300 to 450 K.

Cation Disorder and Thermoelectric Properties in Layered Ternary Compounds MBi2Te4 (M = Ge, Sn)

Cation disorder and thermoelectric properties in layered ternary compounds MBi 2 Te 4 (M = Ge, Sn)

Atomic Disordering Advances Thermoelectric Group IV Telluride Alloys with a Multiband Transport

Promising Cubic MnGeTe 2 Thermoelectrics

High Thermolectric Properties of Disordered Ge0.8-ySn0.2MnyTe Semiconductor

The Criteria for Beneficial Disorder in Thermoelectric Solid Solutions

High thermoelectric properties of disordered layered Ge1-xSnxTe semiconductors

Off‐Centering of Ge Atoms in GeBi2Te4 and Impact on Thermoelectric Performance

Discordant Distortion in Cubic GeMnTe2 and High Thermoelectric Properties of GeMnTe2- x%SbTe

Cation Substitution and Size Effects in Ca2ZnSb2 and Yb2MnSb2: Crystal and Electronic Structures and Thermoelectric Properties

Structural Disorder in the High-Temperature Cubic Phase of GeTe

(GeTe)<sub>1-<i>x</i></sub>(AgSnSe<sub>2</sub>)<i><sub>x</sub></i>: Strong Atomic Disorder-Induced High Thermoelectric Performance near the Ioffe-Regel Limit

Atomic Disorders in Layer Structured Topological Insulator SnBi 2 Te 4 Nanoplates

Band Modification Towards High Thermoelectric Performance of SnSb2Te4 with Strong Anharmonicity Driven by Cation Disorder

Structural Evolution and Thermoelectric Performance in (gete)m(sb2te3)n Compounds

Long-range Ordering and Local Structural Disordering of BiAgSe2 and BiAgSeTe Thermoelectrics

Thermoelectric Properties of Cu4Ge3Se5 with an Intrinsic Disordered Zinc Blende Structure

Suppressing Lone-Pair Expression Endows Room-Temperature Cubic Structure and High Thermoelectric Performance in GeTe-based Materials

Mechanism of Thermoelectric Performance Enhancement in CaMg2 Bi2 -Based Materials with Different Cation Site Doping.

Structural Evolution and Thermoelectric Performance in (get E) M (sb 2 Te 3 ) N Compounds

High Thermoelectric Performance of Two-Dimensional Layered AB2Te4 (A = Sn, Pb; B = Sb, Bi) Ternary Compounds