Abstract:In thermoelectrics, the material's performance stems from a delicate tradeoff between atomic order and disorder. Generally, dopants and thus atomic disorder are indispensable for optimizing the carrier concentration and scatter short-wavelength heat-carrying phonons. However, the strong disorder has been perceived as detrimental to the semiconductor's electrical conductivity owing to the deteriorated carrier mobility. Here, we report the sustainable role of strong atomic disorder in suppressing the detrimental phase transition and enhancing the thermoelectric performance in GeTe. We found that AgSnSe2 and Sb co-alloying eliminates the unfavorable phase transition due to the high configurational entropy and achieve the cubic Ge(1-x-y)SbyTe(1-x)(AgSnSe2)(x) solid solutions with cationic and anionic site disorder. Though AgSnSe2 substitution drives the carrier mean free path toward the Ioffe-Regel limit and minimizes the carrier mobility, the increased carrier concentration could render a decent electrical conductivity, affording enough phase room for further performance optimization. Given the lowermost carrier mean free path, further Sb alloying on Ge sites was implemented to progressively optimize the carrier concentration and enhance the density-of-state effective mass, thereby substantially enhancing the Seebeck coefficient. In addition, the high density of nanoscale strain clusters induced by strong atomic disorders significantly restrains the lattice thermal conductivity. As a result, a state-of-the-art zT approximate to 1.54 at 773 K was attained in cubic Ge0.58Sb0.22Te0.8(AgSnSe2)(0.2). These results demonstrate that the strong atomic disorder at the high entropy scale is a previously underheeded but promising approach in thermoelectric material research, especially for the numerous low carrier mobility materials.

Cation disorder and thermoelectric properties in layered ternary compounds MBi 2 Te 4 (M = Ge, Sn)

Cation Disorder and Thermoelectric Properties in Layered Ternary Compounds MBi2Te4 (M = Ge, Sn)

Atomic Disordering Advances Thermoelectric Group IV Telluride Alloys with a Multiband Transport

Promising Cubic MnGeTe 2 Thermoelectrics

High Thermolectric Properties of Disordered Ge0.8-ySn0.2MnyTe Semiconductor

Off‐Centering of Ge Atoms in GeBi2Te4 and Impact on Thermoelectric Performance

The Criteria for Beneficial Disorder in Thermoelectric Solid Solutions

Discordant Distortion in Cubic GeMnTe2 and High Thermoelectric Properties of GeMnTe2- x%SbTe

High thermoelectric properties of disordered layered Ge1-xSnxTe semiconductors

Cation Substitution and Size Effects in Ca2ZnSb2 and Yb2MnSb2: Crystal and Electronic Structures and Thermoelectric Properties

Atomic Disorders in Layer Structured Topological Insulator SnBi 2 Te 4 Nanoplates

(GeTe)<sub>1-<i>x</i></sub>(AgSnSe<sub>2</sub>)<i><sub>x</sub></i>: Strong Atomic Disorder-Induced High Thermoelectric Performance near the Ioffe-Regel Limit

Thermoelectric Properties of Cu4Ge3Se5 with an Intrinsic Disordered Zinc Blende Structure

Structural Evolution and Thermoelectric Performance in (gete)m(sb2te3)n Compounds

Structural Disorder in the High-Temperature Cubic Phase of GeTe

Mechanism of Thermoelectric Performance Enhancement in CaMg2 Bi2 -Based Materials with Different Cation Site Doping.

Long-range Ordering and Local Structural Disordering of BiAgSe2 and BiAgSeTe Thermoelectrics

Band Modification Towards High Thermoelectric Performance of SnSb2Te4 with Strong Anharmonicity Driven by Cation Disorder

Suppressing Lone-Pair Expression Endows Room-Temperature Cubic Structure and High Thermoelectric Performance in GeTe-based Materials

Structural Evolution and Thermoelectric Performance in (get E) M (sb 2 Te 3 ) N Compounds

High Thermoelectric Performance of Two-Dimensional Layered AB2Te4 (A = Sn, Pb; B = Sb, Bi) Ternary Compounds