Abstract:Ga-doped ZnO nanowire has a wurtzite hexagonal structure and has been prepared in a horizontal tube furnace by thermal chemical vapor deposition method. In this work, we fabricate the Ga-doped ZnO nanowires without a metalized catalyst through the thermal evaporation of the Zn powers and Ga degrees C.Temperature is the metals at a low growth temperature of 550 d critical experimental parameter for the formation of Ga-dope the ZnO nanowires.This evaporation process can be attributed to Ga dopant In the lattice position of he ZnO nanowires. As shown In scanning electron microscopy (SEM), nanowires of different diameters are evenly arranged on the Si substrate and nucleated via a self-catalysed mechanism by depositing a layer of ZnO film as the crystallization plant before growing ZnO nanowires on the film. Self-catalyzed growth of Ga-doped ZnO nanowires are of diameters 35-150nm and lengths up to several ones of micrometers. High resolution Transmission electron microscope (HRTEM) those lattice image of Ga doped ZnO nanowires, wherein nanowires are seen a lattice of a=3.25 angstrom and c=5.19 angstrom. As determine by selected area diffraction (SAD), the growth direction of Ga-doped ZnO nanowires is [001] and the nanowire consists of single-crystailline ZnO crystals.The luminescence spectra of the Ga-doped ZnO nanowires exhibit a UV band at 374nm and a strong green band at 498nm. In addition, the Ga-doped ZnO nano,wires with different diameters have a larger green light/UV ratio due to the recombination of holes with the electrons occupying the singly ionized more O vacancies that are larger In number. By virue of the doping of Ga, we observe that Ga-doped ZnO nanowires becomes broader and shifts to a longer wave 498nm at a lower energy and a strong green emission as compared to the undoped one in the cathodoluminescence and photoluminescence spectra. The Ga-doped ZnO nanowires; have a greater field-enhancement factor than the undoped ZnO nanowies. The Ga-doped ZnO nanowires with a low turn on field (12V mu m(-1)) are apparently lower than the undoped ZnO nanowires. Our results demonstrate that Ga-doped ZnO nanowires can provide the possibility of application In optoelectric nanodevices.

beta-Ga2O3 nanowires: controlled growth, characterization, and deep-ultraviolet photodetection application

Catalyst‐Free Vapor–Solid Deposition Growth of β‐Ga2O3 Nanowires for DUV Photodetector and Image Sensor Application

Fabrication and Characterization of Β-Ga2o3 Optical Nanowires

Nanowire-Seeded Growth of Single-Crystalline (010) Β-Ga2 O3 Nanosheets with High Field-Effect Electron Mobility and On/Off Current Ratio.

Gallium oxide nanowires for UV detection with enhanced growth and material properties

Preparation, Doping Modulation and Field Emission Properties of Square-Shaped GaN Nanowires

Patterned Ga 2 O 3 nanowires synthesized by CVD method for High-performance self-powered ultraviolet photodetector

Fabrication and UV-sensing properties of one-dimensional β-Ga 2O3 nanomaterials

From powder to nanowire: A simple and environmentally friendly strategy for optical and electrical GaN nanowire films

β-Ga2O3 Nanostructures: Chemical Vapor Deposition Growth Using Thermally Dewetted Au Nanoparticles as Catalyst and Characterization

Controllable Growth of Gallium Oxide Nanowires by Chemical Vapor Deposition

Enhanced performance of solar‐blind UV photodetector based on β‐Ga2O3 nanowires grown by a magnetron sputtering

Synthesis of InAl-alloyed Ga2O3 nanowires for self-powered ultraviolet detectors by a CVD method

The Effect of Ga-doped Nanocrystalline ZnO Electrode on Deep-Ultraviolet Enhanced GaN Photodetector

Synthesis and characterization of <i>β</i> -Ga <sub>2</sub> O <sub>3</sub> @GaN nanowires

Characterization of Ga-doped ZnO Nanowires Grown by Thermal Chemical Vapor Deposition

α/β phase junction Ga2O3 based high-performance self-powered deep ultraviolet photodetectors with Ti3C2/Ag nanowire hybrid conductive electrode

High performance solar-blind UV detector based on β-Ga2O3/GaN nanowires heterojunction

Synthesis and Characterization of Β-Ga 2 O 3 @gan Nanowires

High responsivity self-powered DUV photodetectors based on β-Ga2O3/GaN heterogeneous PN junctions

Self-catalyst β-Ga 2 O 3 semiconductor lateral nanowire networks synthesis on the insulating substrate for deep ultraviolet photodetectors