Abstract:Two-dimensional wafer-scale and single-crystal hexagonal boron nitride (h-BN) films are considered a crucial part of the next generation of van der Waals (vdW) electronic devices. Progress has been made in the synthesis process recently, leading to the demonstration of electronic devices. In this work, we report an effective method to synthesize high-quality single-crystal h-BN monolayer films. Single-crystal metal substrates were produced by thermal annealing of Ni foils, followed by electropolishing to remove the passivated surface layer. Molecular beam epitaxy was employed to synthesize 1 in.2 monolayer single-crystal h-BN films. We discovered that electropolishing plays an important role in drastically increasing the speed of h-BN film growth. Robust nanocapacitors were fabricated using as-grown monolayer h-BN films. The nanocapacitance effect and tunneling current mechanism were studied in detail, and the "effective distance" concept is introduced to explain the quantum phenomenon in the (vdW) metal–insulator–metal devices using atomically thin dielectric h-BN films.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsanm.1c00298?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsanm.1c00298</a>.Substrate preparation; XPS characterization of substrates; temperature-dependent growth; characterization of h-BN nuclei; schematic of an ideal capacitor with monolayer h-BN as dielectric; depth-profiling XPS of patterned electrodes; size-dependent low-frequency C–f profiles; and Al/h-BN interface morphology characterization (<a class="ext-link" href="/doi/suppl/10.1021/acsanm.1c00298/suppl_file/an1c00298_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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